Investigation into the wafer-scale integration of fine-grain parallel processing computer systems

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis investigates the potential of wafer-scale integration (WSI) for the implementation of low-cost fine-grain parallel processing computer systems. As WSI is a relatively new subject, there was little work on which to base investigations. Indeed, most WSI architectures existed only as untried and sometimes vague proposals. Accordingly, the research strategy approached this problem by identifying a representative WSI structure and architecture on which to base investigations. An analysis of architectural proposals identified associative memory to be general purpose parallel processing component used in a wide range of WSI architectures. Furthermore, this analysis provided a set of WSI-level design requirements to evaluate the sustainability of different architectures as research vehicles. The WSI-ASP (WASP) device, which has a large associative memory as its main component is shown to meet these requirements and hence was chosen as the research vehicle. Consequently, this thesis addresses WSI potential through an in-depth investigation into the feasibility of implementing a large associative memory for the WASP device that meets the demanding technological constraints of WSI. Overall, the thesis concludes that WSI offers significant potential for the implementation of low-cost fine-grain parallel processing computer systems. However, due to the dual constraints of thermal management and the area required for the power distribution network, power density is a major design constraint in WSI. Indeed, it is shown that WSI power densities need to be an order of magnitude lower than VLSI power densities. The thesis demonstrates that for associative memories at least, VLSI designs are unsuited to implementation in WSI. Rather, it is shown that WSI circuits must be closely matched to the operational environment to assure suitable power densities. These circuits are significantly larger than their VLSI equivalents. Nonetheless, the thesis demonstrates that by concentrating on the most power intensive circuits, it is possible to achieve acceptable power densities with only a modest increase in area overheads.SER

Analog Spiking Neuromorphic Circuits and Systems for Brain- and Nanotechnology-Inspired Cognitive Computing

Human society is now facing grand challenges to satisfy the growing demand for computing power, at the same time, sustain energy consumption. By the end of CMOS technology scaling, innovations are required to tackle the challenges in a radically different way. Inspired by the emerging understanding of the computing occurring in a brain and nanotechnology-enabled biological plausible synaptic plasticity, neuromorphic computing architectures are being investigated. Such a neuromorphic chip that combines CMOS analog spiking neurons and nanoscale resistive random-access memory (RRAM) using as electronics synapses can provide massive neural network parallelism, high density and online learning capability, and hence, paves the path towards a promising solution to future energy-efficient real-time computing systems. However, existing silicon neuron approaches are designed to faithfully reproduce biological neuron dynamics, and hence they are incompatible with the RRAM synapses, or require extensive peripheral circuitry to modulate a synapse, and are thus deficient in learning capability. As a result, they eliminate most of the density advantages gained by the adoption of nanoscale devices, and fail to realize a functional computing system. This dissertation describes novel hardware architectures and neuron circuit designs that synergistically assemble the fundamental and significant elements for brain-inspired computing. Versatile CMOS spiking neurons that combine integrate-and-fire, passive dense RRAM synapses drive capability, dynamic biasing for adaptive power consumption, in situ spike-timing dependent plasticity (STDP) and competitive learning in compact integrated circuit modules are presented. Real-world pattern learning and recognition tasks using the proposed architecture were demonstrated with circuit-level simulations. A test chip was implemented and fabricated to verify the proposed CMOS neuron and hardware architecture, and the subsequent chip measurement results successfully proved the idea. The work described in this dissertation realizes a key building block for large-scale integration of spiking neural network hardware, and then, serves as a step-stone for the building of next-generation energy-efficient brain-inspired cognitive computing systems

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays.

Resistive RAM crossbar arrays offer an attractive solution to minimize off-chip data transfer and parallelize on-chip computations for neural networks. Here, we report a hardware/software co-design approach based on low energy subquantum conductive bridging RAM (CBRAM®) devices and a network pruning technique to reduce network level energy consumption. First, we demonstrate low energy subquantum CBRAM devices exhibiting gradual switching characteristics important for implementing weight updates in hardware during unsupervised learning. Then we develop a network pruning algorithm that can be employed during training, different from previous network pruning approaches applied for inference only. Using a 512 kbit subquantum CBRAM array, we experimentally demonstrate high recognition accuracy on the MNIST dataset for digital implementation of unsupervised learning. Our hardware/software co-design approach can pave the way towards resistive memory based neuro-inspired systems that can autonomously learn and process information in power-limited settings