Magnetic domain walls : Types, processes and applications

Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show rich physical behaviour and are controllable using a number of methods including magnetic fields, charge and spin currents and spin-orbit torques. In this review, we detail types of domain walls in ferromagnetic nanowires and describe processes of manipulating their state. We look at the state of the art of DW applications and give our take on the their current status, technological feasibility and challenges.Comment: 32 pages, 25 figures, review pape

Stochastic-Based Computing with Emerging Spin-Based Device Technologies

In this dissertation, analog and emerging device physics is explored to provide a technology platform to design new bio-inspired system and novel architecture. With CMOS approaching the nano-scaling, their physics limits in feature size. Therefore, their physical device characteristics will pose severe challenges to constructing robust digital circuitry. Unlike transistor defects due to fabrication imperfection, quantum-related switching uncertainties will seriously increase their susceptibility to noise, thus rendering the traditional thinking and logic design techniques inadequate. Therefore, the trend of current research objectives is to create a non-Boolean high-level computational model and map it directly to the unique operational properties of new, power efficient, nanoscale devices. The focus of this research is based on two-fold: 1) Investigation of the physical hysteresis switching behaviors of domain wall device. We analyze phenomenon of domain wall device and identify hysteresis behavior with current range. We proposed the Domain-Wall-Motion-based (DWM) NCL circuit that achieves approximately 30x and 8x improvements in energy efficiency and chip layout area, respectively, over its equivalent CMOS design, while maintaining similar delay performance for a one bit full adder. 2) Investigation of the physical stochastic switching behaviors of Mag- netic Tunnel Junction (MTJ) device. With analyzing of stochastic switching behaviors of MTJ, we proposed an innovative stochastic-based architecture for implementing artificial neural network (S-ANN) with both magnetic tunneling junction (MTJ) and domain wall motion (DWM) devices, which enables efficient computing at an ultra-low voltage. For a well-known pattern recognition task, our mixed-model HSPICE simulation results have shown that a 34-neuron S-ANN implementation, when compared with its deterministic-based ANN counterparts implemented with digital and analog CMOS circuits, achieves more than 1.5 ~ 2 orders of magnitude lower energy consumption and 2 ~ 2.5 orders of magnitude less hidden layer chip area

BOOLEAN AND BRAIN-INSPIRED COMPUTING USING SPIN-TRANSFER TORQUE DEVICES

Several completely new approaches (such as spintronic, carbon nanotube, graphene, TFETs, etc.) to information processing and data storage technologies are emerging to address the time frame beyond current Complementary Metal-Oxide-Semiconductor (CMOS) roadmap. The high speed magnetization switching of a nano-magnet due to current induced spin-transfer torque (STT) have been demonstrated in recent experiments. Such STT devices can be explored in compact, low power memory and logic design. In order to truly leverage STT devices based computing, researchers require a re-think of circuit, architecture, and computing model, since the STT devices are unlikely to be drop-in replacements for CMOS. The potential of STT devices based computing will be best realized by considering new computing models that are inherently suited to the characteristics of STT devices, and new applications that are enabled by their unique capabilities, thereby attaining performance that CMOS cannot achieve. The goal of this research is to conduct synergistic exploration in architecture, circuit and device levels for Boolean and brain-inspired computing using nanoscale STT devices. Specifically, we first show that the non-volatile STT devices can be used in designing configurable Boolean logic blocks. We propose a spin-memristor threshold logic (SMTL) gate design, where memristive cross-bar array is used to perform current mode summation of binary inputs and the low power current mode spintronic threshold device carries out the energy efficient threshold operation. Next, for brain-inspired computing, we have exploited different spin-transfer torque device structures that can implement the hard-limiting and soft-limiting artificial neuron transfer functions respectively. We apply such STT based neuron (or ‘spin-neuron’) in various neural network architectures, such as hierarchical temporal memory and feed-forward neural network, for performing “human-like” cognitive computing, which show more than two orders of lower energy consumption compared to state of the art CMOS implementation. Finally, we show the dynamics of injection locked Spin Hall Effect Spin-Torque Oscillator (SHE-STO) cluster can be exploited as a robust multi-dimensional distance metric for associative computing, image/ video analysis, etc. Our simulation results show that the proposed system architecture with injection locked SHE-STOs and the associated CMOS interface circuits can be suitable for robust and energy efficient associative computing and pattern matching

Magnetic racetrack memory: from physics to the cusp of applications within a decade

Racetrack memory (RTM) is a novel spintronic memory-storage technology that has the potential to overcome fundamental constraints of existing memory and storage devices. It is unique in that its core differentiating feature is the movement of data, which is composed of magnetic domain walls (DWs), by short current pulses. This enables more data to be stored per unit area compared to any other current technologies. On the one hand, RTM has the potential for mass data storage with unlimited endurance using considerably less energy than today's technologies. On the other hand, RTM promises an ultrafast nonvolatile memory competitive with static random access memory (SRAM) but with a much smaller footprint. During the last decade, the discovery of novel physical mechanisms to operate RTM has led to a major enhancement in the efficiency with which nanoscopic, chiral DWs can be manipulated. New materials and artificially atomically engineered thin-film structures have been found to increase the speed and lower the threshold current with which the data bits can be manipulated. With these recent developments, RTM has attracted the attention of the computer architecture community that has evaluated the use of RTM at various levels in the memory stack. Recent studies advocate RTM as a promising compromise between, on the one hand, power-hungry, volatile memories and, on the other hand, slow, nonvolatile storage. By optimizing the memory subsystem, significant performance improvements can be achieved, enabling a new era of cache, graphical processing units, and high capacity memory devices. In this article, we provide an overview of the major developments of RTM technology from both the physics and computer architecture perspectives over the past decade. We identify the remaining challenges and give an outlook on its future