New Q-Enhanced Planar Resonators for Low Phase-Noise Radio Frequency Oscillators.

Low phase-noise oscillators are key components of high-performance wireless transceivers. Traditional oscillator designs employ single resonators whose quality-factors are limited and depend on the resonator fabrication technology. In particular, planar resonators suffer from excessive conductor and substrate losses, limiting their achievable quality-factor. This work investigates complex resonant structures, capable of overcoming the limited quality-factors of planar circuits. The proposed methods can be applied to design miniaturized, very low phase-noise, voltage-controlled-oscillators at microwave and millimeter-wave frequencies. The application of elliptic filters as frequency stabilization elements in the design of low phase-noise oscillators is introduced. By taking advantage of the large quality-factor peaks formed at the pass-band edges of elliptic filters, significant phase-noise reductions are achieved. Active resonators are incorporated in the design of elliptic filters to compensate for the losses and boost their quality-factors. The problem of added noise in active resonators is addressed and a design procedure is presented that allows for active resonators’ full loss compensation with minimum noise-figure degradation. An X-band oscillator is designed employing a four-pole active elliptic filter as a frequency stabilization element within its feedback network. The high-Q and low-noise properties of the active elliptic filter enable the oscillator to achieve a record low phase-noise level of -150 dBc/Hz at 1 MHz frequency offset in planar microstrip circuit technology. The thesis concludes with a novel voltage-controlled-oscillator that achieves a state-of-the-art phase-noise performance while having a compact and planar structure. The oscillator’s core is an active elliptic filter which provides high frequency-selectivity and, at the same time, initiates and sustains the oscillation. The elliptic filter is implemented using a dual-mode square-loop resonator. This technique not only helps reduce the VCO’s size, but also eases the frequency-tuning mechanism. The proposed VCO structure occupies a small area making it suitable for integrated circuit fabrication at millimeter-wave frequencies.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/89682/1/mornick_1.pd

Analysis, modeling and simulation of ring resonators and their applications to filters and oscillators

Microstrip ring circuits have been extensively studied in the past three decades. A magnetic-wall model has been commonly used to analyze these circuits. Unlike the conventional magnetic-wall model, a simple transmission-line model, unaffected by boundary conditions, is developed to calculate the frequency modes of ring resonators of any general shape such as annular, square, or meander ring resonators. The new model can be used to extract equivalent lumped element circuits and unloaded Qs for both closed- and open-loop ring resonators. Several new bandpass filter structures, such as enhanced coupling, slow-wave, asymmetric-fed with two transmission zeros, and orthogonal direct-fed, have been proposed. These new proposed filters provide advantages of compact size, low insertion loss, and high selectivity. Also, an analytical technique is used to analyze the performance of the filters. The measured results show good agreement with the simulated results. A compact elliptic-function lowpass filter using microstrip stepped impedance hairpin resonators has been developed. The prototype filters are synthesized from the equivalent circuit model using available element-value tables. The filters are evaluated by experiment and simulation with good agreement. This simple equivalent circuit model provides a useful method to design and understand this type of filters and other relative circuits.Finally, a tunable feedback ring resonator oscillator using a voltage controlled piezoelectric transducer is introduced. The new oscillator is constructed by a ring resonator using a pair of orthogonal feed lines as a feedback structure. The ring resonator with two orthogonal feed lines can suppress odd modes and operate at even modes. A voltage controlled piezoelectric transducer is used to vary the resonant frequency of the ring resonator. This tuned oscillator operating at high oscillation frequency can be used in many wireless and sensor systems

Advances in Filter Miniaturization and Design/Analysis of RF MEMS Tunable Filters

The main purpose of this dissertation was to address key issues in the design and analysis of RF/microwave filters for wireless applications. Since RF/microwave filters are one of the bulkiest parts of communication systems, their miniaturization is one of the most important technological challenges for the development of compact transceivers. In this work, novel miniaturization techniques were investigated for single-band, dual-band, ultra-wideband and tunable bandpass filters. In single-band filters, the use of cross-shaped fractals in half-mode substrate-integrated-waveguide bandpass filters resulted in a 37 percent size reduction. A compact bandpass filter that occupies an area of 0.315 mm2 is implemented in 90-nm CMOS technology for 20 GHz applications. For dual-band filters, using half-mode substrate-integrated-waveguides resulted in a filter that is six times smaller than its full-mode counterpart. For ultra-wideband filters, using slow-wave capacitively-loaded coplanar-waveguides resulted in a filter with improved stopband performance and frequency notch, while being 25 percent smaller in size. A major part of this work also dealt with the concept of 'hybrid' RF MEMS tunable filters where packaged, off-the-shelf RF MEMS switches were used to implement high-performance tunable filters using substrate-integrated-waveguide technology. These 'hybrid' filters are very easily fabricated compared to current state-of-the-art RF MEMS tunable filters because they do not require a clean-room facility. Both the full-mode and half-mode substrate-integrated waveguide tunable filters reported in this work have the best Q-factors (93 - 132 and 75 - 140, respectively) compared to any 'hybrid' RF MEMS tunable filter reported in current literature. Also, the half-mode substrate-integrated waveguide tunable filter is 2.5 times smaller than its full-mode counterpart while having similar performance. This dissertation also presented detailed analytical and simulation-based studies of nonlinear noise phenomena induced by Brownian motion in all-pole RF MEMS tunable filters. Two independent mathematical methods are proposed to calculate phase noise in RF MEMS tunable filters: (1) pole-perturbation approach, and (2) admittance-approach. These methods are compared to each other and to harmonic balance noise simulations using the CAD-model of the RF MEMS switch. To account for the switch nonlinearity in the mathematical methods, a nonlinear nodal analysis technique for tunable filters is also presented. In summary, it is shown that output signal-to-noise ratio degradation due to Brownian motion is maximum for low fractional bandwidth, high order and high quality factor RF MEMS tunable filters. Finally, a self-sustained microwave platform to detect the dielectric constant of organic liquids is presented in this dissertation. The main idea is to use a voltage- controlled negative-resistance oscillator whose frequency of oscillation varies according to the organic liquid under test. To make the system self-sustained, the oscillator is embedded in a frequency synthesizer system, which is then digitally interfaced to a computer for calculation of dielectric constant. Such a system has potential uses in a variety of applications in medicine, agriculture and pharmaceuticals

Review of Filter Techniques

Abstract-The paper focuses on filter fundamental along with different types of filter and its technology.Design of Filters, its analysis tools and its application has been discussed in detail

Wireless Transceivers for Implantable Microsystems.

In this thesis, we present the first-ever fully integrated mm3 low-power biomedical transceiver with 1 meter of range that is powered by a mm2 thin-film battery. The transceiver is targeted for biomedical implants where size and energy constraints dictated by application make design challenging. Despite all the previous work in RFID tags, form factor of such radios is incompatible with mm3 biomedical implants. The proposed transceiver bridges this gap by providing a compact low-power solution that can run off small thin-film batteries and can be stacked with other system components in a 3D fashion. On the sensor-to-external side, we proposed a novel FSK architecture based on dual-resonator LC oscillators to mitigate unwanted overlap of two FSK tones’ phase noise spectrum. Due to inherent complexity of such systems, fourth order dual-resonator oscillators can exhibit instable operation. We mathematically modeled the instability and derive design conditions for stable oscillations. Through simulation and measurements, validity of derived models was confirmed. Together with other low-power system blocks, the transmitter was successfully implanted in live mouse and in-vivo measurements were performed to confirm successful transmission of vital signals through organic tissue. The integrated transmitter achieved a bit-error-rate of 10-6 at 10cm with 4.7nJ/bit energy consumption. On the external-to-sensor link, we proposed a new protocol to lower receiver peak power, which is highly limited due to small size of mm3 microsystem battery. In the proposed protocol, sending same data multiple times drastically relaxes jitter requirement on the sensor side at the cost of increased power consumption on the external side without increasing peak power radiated by the external unit. The receiver also uses a dual-coil LNA to improve range by 22% with only 11% area overhead. An asynchronous controller manages protocol timing and limits total monitoring current to 43nA. The fabricated receiver consumes 1.6nJ/bit at 40kbps while positioned 1m away from a 2W source.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/102458/1/ghaed_1.pd

MICROWAVE FILTERS FOR NEXT GENERATION RADIO FREQUENCY TRANSCEIVERS

Increased data rates in wireless communications enforce unprecedented performance metrics on the front-end filters to operate in crowded spectral bands. These requirements include strong selectivity, low insertion loss, and good out-of-band (OOB) rejection in addition to the applicability in complementary metal oxide semiconductor (CMOS) integrated circuit layouts. The acoustic wave (AW) resonator based filter design technology has gained a very important role in the on-chip filter design techniques due to chip-scale physical resonator sizes and the ability of achieving high quality factor values at microwave frequencies. However, conventional synthesis methods used in the design of AW resonator based microwave filters suffer from limited achievable fractional bandwidth (FBW) and weak OOB rejection. The origin of these issues is the limitations on increasing the electromechanical coupling coefficient (kt2) of the resonators, which is an intrinsic property of the piezoelectric material in its design. This dissertation proposes a new class of hybrid acoustic-electromagnetic (Hybrid-ACEM) filters to overcome both of the aforementioned limitations of AW resonator-based filters. In other words, the main goal of this new topology is to maximize the ratio between the achievable FBW and the required kt2. This is achieved by employing one or two electromagnetic (EM) resonators that are placed at purposefully selected stages within the design. In addition, cross-coupling mechanisms are systematically used to reduce the required electromechanical coupling coefficient in certain filter orders. Altogether, the proposed method can achieve much larger FBW values and stronger OOB rejection compared to the conventionally synthesized ladder acoustic wave filters. The effect of finite quality factor of the EM resonators is analyzed. A new algorithm to convert extracted-pole sections to Butterworth-Van-Dyke (BVD) model for large FBW values is also presented. It has been shown in the simulations that FBW-to-kt2 ratios of four or above is achievable with this method. As a proof-of-concept, a sixth-order hybrid canonical prototype with a center frequency of 2.67 GHz and 11.2% FBW is designed and fabricated. The acoustic wave resonators used in the fabrication have kt2 values of 3.5%. The fabricated prototype proves the validity of the proposed method for achieving FBW values of 30% with required kt2 values of 7.5%, which is available with the common aluminum nitride (AlN) based bulk acoustic wave resonator technologies of today. The developed technique opens a new pathway to reduce the limitations of integrating microwave filters for future fully on-chip microwave transceivers

High Performance Tunable Active Inductors For Microwave Circuits

Tez (Doktora) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2016Thesis (PhD) -- İstanbul Technical University, Institute of Science and Technology, 2016RF uygulamalarında enduktif karakteristiğe önemli ölçüde ihtiyaç duyulmaktadır; bunlar, özellikle filtreler, düşük gürültülü yükselteçler (LNA, low noise amplifiers), gerilim kontrollü osilatörler (VCO, voltage controlled oscillators), pek çok farklı türde yükselteç için band genişliği iyileştirilmesi, faz kaydırıcılar, güç bölücüler ve eşleştirme (matching) devreleri vb. uygulamalardır. Pasif sarmal çip-içi CMOS endüktansların eksik yönleri ayrıntılı olarak literatürde tartışılmıştır. Bu tür endüktanslar düşük değer katsayısı (quality factor), düşük öz-rezonans frekansı (SRF, self-resonance frequency), sabit ve düşük değerli endüktans ve geniş bir silikon (silicon) alanı gerektirmeleri gibi istenmeyen özelliklere sahiptirler. Diğer yandan, MOS transistorlar kullanılarak sentezlenen CMOS aktif endüktansların, pasif sarmal eşdeğer yapıları ile karşılaştırıldığında pek çok çekici karakteristik özellik sunabildikleri gösterilmiştir. Bunlar; geniş bir bölgede ayarlanabilir öz-rezonans frekansı başarımı, geniş bir bölgede ayarlanabilir endüktans başarımı, geniş bir bölgede ayarlanabilir değer katsayısı başarımı, CMOS teknolojileri ile tümüyle gerçeklenebilme ve az alan kaplama gibi karakteristik özellikleri olarak ortaya konulmaktadır. Literatürde jiratör-C (GC) prensibi, topolojisi, karakterizasyonu ve uygulamaları ayrıntılı olarak ele alınmaktadır. İşlemsel geçiş-iletkenliği kuvvetlendiricisi (OTA, operational transconductance amplifier) ile gerçeklenen GC devreleri, RF uygulamaları için oldukça uygundur. Bu özellik, GC yapılarının söz konusu yapı kullanılarak en az sayıda aktif eleman ile gerçeklenebilmesinden kaynaklanmaktadır. Gerek topraklı (grounded) gerekse yüzen (floating) aktif endüktansların GC devreleri ile gerçeklenebildiği gösterilmiştir. Aktif endüktansların başarımlarının nicel olarak ölçülmesi amacıyla, çok sayıda ölçüt ortaya konulmuştur. Bu ölçütler frekans çalışma aralığı, endüktans ayarlanabilirliği, değer katsayısı, gürültü ve güç tüketimi gibi temel özellikleri içerirler. CMOS transistorların parazitik bileşenlerinden dolayı tasarlanan aktif endüktanslar belirli bir frekans bölgesinde endüktif davranış gösterirler. Alt frekans sınırı, GC devrelerinin sıfır frekansı ile belirlenirken; üst frekans sınırı ise öz-rezonans frekansı ile belirlenir. Aktif endüktansların pasif sarmal eşdeğer yapılarına göre en önemli üstünlüklerinden biri de; endüktanslarının geniş bir değer aralığıunda ayarlanabilir olmasıdır. GC aktif endüktansların endüktans değeri, transistorların geçiş-iletkenliklerinin ya da MOS varaktörlerle gerçeklenen yük kapasitanslarının değiştirilmesi ile ayarlanabilir. Literatürde, GC topolojisine dayalı pek çok CMOS AI (active inductor) devresi bildirilmiştir. Bunların tümü, farklı teknikler kullanılarak yüksek başarımlı AI yapıları oluşturmayı amaçlamışlardır. Bu tezde, bunlardan güncel olan bazı GAI (grounded AI) ve FAI (floating AI) yapıları gözden geçirilmiştir. Bunlardan bazıları, değer katsayısını (QF) iyileştirmek amacıyla, AI kaybını telafi etmek için negatif direnç kullanmışlardır. GC yapıları RF uygulamaları için tasarlandıklarında en az sayıda transistor kullanımı çok kritiktir. Çünkü bu durum AI öz-rezonans frekansının artmasına yardımcı olur. AI’ler, kazanç artırma amacıyla LNA’lerde geniş kullanım alanı bulabilmektedirler. Diğer taraftan, AI yapılarının en önemli dezvantajlarından biri gürültü başarımının pasif endüktanslara nispeten yüksek olmasıdır. Literatürde bu dezavantajı gidermek amacıyla teklif edilen yaklaşımlardan biri dejenerasyon direncinin bulunduğu bir geribesleme katı kullanılarak girişe gelen gürültü katkısını azaltmayı amaçlamıştır. Literatürde teklif edilen tekniklerin amacı, parazitik bileşenlerin etkisini azaltmak ya da tümüyle ortadan kaldırmaktır. Bu tezde, ileri devre teknikleri kullanılarak, yeni topraklı (grounded) ve yüzen (floting) AI yapıları tasarlanmıştır. AI giriş ve çıkış düğümlerine ait iletkenlikleri azaltmak için çoklu-düzenlenmiş kaskod (multi-regulated cascode, MRC) katları QF değerini iyileştirme amacıyla kullanılmaktadır. MRC katı PMOS transistorlarıyla oluşturulmuştur. PMOS transistor kullanımı, • ikinci kat kutuplamasını ayarlayabilmek amacıyla, giriş transistor boyutunun mümkün olduğunca azaltılmasını, • ana AC işaret yolundaki transistor sayısının azaltılmasını, sağlamaktadır. Tezde sunulan teorik analiz ve serim sonrası benzetim sonuçları, MRC katı kullanımının AI özelliklerine yaptığı etkiyi göstermektedir. Elde edilen sonuçlar bu katların AI tasarımında yüksek QF elde edilmesini imkan tanıdığını ortaya koynaktadır. Literatürde, iki ana AI başarım karakteristiği olan SRF ve QF başarımlarının iyileştirmesi için çok sayıda çalışma bulunmaktadır. Bu tezde, birbirlerini etkilemeksizin SRF ve QF başarımlarının ayarlanabilmesi özelliğine sahip bir AI’ın tasarımı ve benzetgimi yapılmıştır. Kaskod ve RC geribesleme yapıları yeni AI tasarımında kullanılmıştır. Daha önce de tartışıldığı üzere, AI karakterizasyonu açısından giriş transistoru çok önemlidir. Girişi transistorunun kaskodlanması, ilk jiratörün geçiş-iletkenliğinin ve giriş parazitik kapasitansının birbirinden bağımsız olarak ayarlanması gibi önemli ve kullanışlı bir özelliği beraberinde getirir. Bunun yanısıra, endüktansın değeri diğer transistorun iletkenliği ile ayarlanabilir. AI parazitik seri-rezistansını yok etmek amacıyla kullanılan RC geribeslemesi, QF iyileştirmesini sağlayabilmektedir. Kaskod transistorların kutuplama koşulu bir diyot-bağlı transistor ile sağlandığından; önerilen yapı proses, gerilim ve sıcaklık değişimleri açısından kararlı ve yüksek başarımlıdır. AI yapılarında karşılaşılan düşük gürültü başarımı, AI’ların LNA gibi RF uygulamalarda kullanımını sınırlamaktadır. Bir AI’ın ana gürültü kaynağı giriş transistorudur. Düşük gürültülü AI elde etmek için, giriş transistoru yeterince büyük boyutlu olarak tasarlanmalıdır. Ne var ki, büyük boyutlu böyle bir transistor, düşük bir SRF ve dolayısıyla sınırlı bir endüktif bandı beraberinde getirir. Bu tezde, düşük gürültülü ve az kayıplı uygun bir AI, düşük gürültü gerektiren RF uygulamaları için sunulmuştur. Teklif edilen AI devresindeki tüm transistorların ortak-kaynak (common-source, CS) yapısında kullanılması, düşük iletkenliğe sahip düğümlerin dolayısıyla yüksek QF değerine sahip bir AI’ın elde edilmesine olanak sağlamaktadır. AI gürültüsünü azaltmak için, sırasıyla P-tipi MOS transistorlar ve ileri-besleme yolu yapısı (feed-forward path, FFP) kullanılmaktadır. Bilindiği gibi, sensörler çok çeşitli fiziksel büyüklüklerin eletrik mühendisiliği alanına taşınmasını sağlamaktadır. Çok geniş kullanım alanı bulan sensör tiplerinden biri kapasitif mikro algılıyıcılardır. Kapasitif mikro algılayıcılar mekanik hareketleri küçük kapasitans değişimlerine çevirirler. Micro algılayıcıdaki kapasitans değişimi femto-Farad mertebesinde olup algılamayı zorlaştırmaktadır. Diğer yandan, küçük bir kapasitans değişimini yüksek bir empedans değişimine çevirebilmeleri dolayısıyla, GC topolojilerinin kapasitif algılayıcılarda kullanılabileceğini söylemek mümkündür. Bu tezde, bu düşünceden yola çıkılarak, kesit duyarlılığını yok etme yeteneğine sahip yeni bir 3-eksen ivme-ölçer tasarlanmıştır. Yapının, her eksendeki ivmeyi bağımsız olarak algılayabilmesi için, algılayıcı elektrodları uygun olarak yerleştirilmiştir. Daha sonra, bir kapasitif algılayıcıdaki çok küçük kapasitans değişimlerini algılayabilmek için yeni bir GC yapısı teklif edilmiştir. Önerilen yapıda, çalışma frekansı aralığı ve ölçekleme çarpanı, kutuplama akımlarının ayarlanması suretiyle birbirini etkilemeksizin ayarlanabilmektedir. Ayrıca, önerilen yapıda, parazitik bileşenlerin etkisini yok etmek için RC geribesleme ve kaskod yapılar kullanılmaktadır. Son olarak, bu tezde sunulan AI’ların çok amaçlı özellikte olduğunu göstermek amacıyla, 3 ve 6. dereceden geniş bantlı mikrodalga filtrelerde kullanılmaları ele alınmıştır. İlki 3. dereceden bir Chebyshev alçak geçiren filtredir. Basitleştirilmiş gerçel frekans tekniği (SRFT, simplified real frequency technique) ile tasarlanan ikincisi ise, 6. dereceden bir Chebyshev band geçiren filtredir. Filtrelerin benzetimle elde edilmiş frekans yanıtları, bu tezde sunulan AI’ların literatürdeki yapılara güçlü birer alternatif olduklarını ortaya koymaktadır.There is critical need for inductive characteristics in RF applications, especially in filters, LNA, VCO, bandwidth-enhancement in many kinds of amplifiers, phase shifters, power divider and matching networks. The drawbacks of using passive and spiral inductors in CMOS process are discussed in the literature. It is shown that these kind of inductors suffer from a low quality factor, a low self-resonant frequency, a low and fixed inductance value and the need for a large silicon area. Furthermore, it is shown in the literature that CMOS Active Inductors (AIs), which are synthesized using MOS transistors, offer a number of attractive characteristics as compared with their spiral counterparts. These characteristics include a low silicon consumption, a large and tunable self-resonant frequency, a large and tunable inductance, a large and tunable quality factor, and fully realizable in digital CMOS technologies. Then principles, topologies, characterizations and implementation of the Gyrator-C (GC) network is discussed in-depth. The GC networks, which are implemented by operational transconductance amplifier, are suitable for RF application. This property arises from their minimum usage of active elements. It is shown that both grounded and floating active inductors can be implemented by GC networks. To provide a quantitative measure of the performance of AIs, a number of figure-of-merits have been introduced in the thesis. These figure-of-merits include frequency range, inductance tunability, quality factor, noise and power consumption. Due to parasitic components of CMOS transistors, designed AIs have inductive behavior in a specified frequency range. The low frequency bound is set by the frequency of the zero of the gyrator-C networks while the upper frequency bound is set by Self-Resonance Frequency (SRF). One of the key advantages of active inductors over their spiral counterparts is the large tunability of their inductance. The inductance of GC AIs can be tuned by varying either the transconductances of the transconductors or the load capacitance, which is implemented by MOS varactor. Based on GC topology, there are many reported CMOS AI circuits in literature. All of them have tried to invent high performance AI by using different techniques. Some of recent proposed Grounded AI (GAI) and Floating AI (FAI) circuits are reviewed in the thesis. Some of them use negative resistor to compensate the loss of AI for QF enhancement. Some others try to use minimum number of transistors in order to increase the self-resonance frequency of AI for RF applications. In some applications, AIs are used in LNA circuits for gain boosting purpose. In that applications, designers have tried to cancel the noise of AI by using a feedback stage with a degeneration resistor to reduce the noise contribution to the input. The main aim of all the techniques is to cancel or reduce the effects of parasitic components. In the thesis, four new grounded and floating AIs are designed by using advanced circuit techniques. The first one, Multi Regulated Cascode (MRC) stages are employed for lowering conductance in input and output nodes of AI. Thus, Q performance is improved. Since these stages are used only for increasing impedance of input/output nodes, they are made up of PMOS transistors in order to: • minimize the input transistor as small as possible in order to adjust second stage biasing, • decrease the number of transistors in main path of AC signal Theoretical analysis and post-layout simulation results shows the effectiveness of using MRC stages usage in properties of AI. High Q symmetric floating version of low loss inductor is also designed by utilizing MRC stages. Designers do their best to improve SRF and QF, two main characteristics in term of AI performance. An AI with ability to adjust its SRF and QF without affecting each other is designed and simulated as a third. The cascoding and RC feedback structures are used in the new design of AI. As it discussed before, input transistor is very important regarding to AI characterizations. Cascoding input transistor gives the ability to adjust the first gyrator’s transconductance and input parasitic capacitance independently which it results in adjusting the self-resonance frequency and quality factor separately. Due to our best knowledge from literature reviewing, it is first time that the properties of an inductor can be adjusted independently. Furthermore, the inductance value can be adjusted by other transistor’s transconductances. Also, the RC feedback is utilized to cancel the parasitic series-resistance of AI which results in QF enhancement. Since, bias condition of cascoding transistors is provided by a diode-connected transistor, the proposed structure is robust in terms of performance over variation in process, voltage and temperature. The Noise of designed AIs has limited the use of them in RF applications such as LNAs. The main noise source of an AI is its input transistor. In order to have low noise AI, the input transistor should be designed large enough. But it leads to low SRF which limited the inductive frequency band. As a fourth active inductor design, a low-noise and low-loss AI is presented suitable for RF low noise applications. Utilizing all transistors in Common Sourse (CS) configuration on the AI circuit leads to low conductance nodes which causes the AI to have high Q. P-type MOS transistors and Feed-Forward Path (FFP) are employed to decrease noise of the AI, respectively. The GC topologies can convert a low capacitance variation to high impedance changing which makes it a good choice for capacitive sensors. The capacitive based micro sensors convert mechanical signals to small capacitance variation. The capacitance variation in micro sensor is in the range of femto-Farads which makes it difficult to sense. Thus, the GC topologies can be used in capacitive sensors in order to sense small capacitive variations. In the thesis, this technique is used in a new accelerometer sensor. It is first time that a gyrator-C network is employed as an interface circuit for capacitive change detection in micro sensors. The new accelerometer structure is designed by using with ability to cancel cross section sensitivity. The sensor’s electrodes are located in such a way that enables the structure to detect acceleration in 3-axis independently. Embedding all 3-axis detecting electrodes in a single proof mass and ability to detect acceleration orientation are salient features of the proposed sensor. Consequently, a new GC configuration for sensing very small capacitance changes in a capacitive sensor is presented in the thesis. In the proposed configuration, the operating frequency range and scaling factor can be adjusted without affecting each other by tuning the bias currents of utilized gyrators. In addition, the proposed configuration employs RC feedback together with the cascoding technique to cancel the effect of the parasitic components in order to get accurate scaling from gyrator-C network. Finally, in order to show versatility of designed AIs, they are used in designed third and sixth order broadband microwave filters. The first one is a third order Chebyshev low pass filter. The second one, which is designed by using simplified real frequency technique is a sixth order Chebyshev band pass filter. The simulated frequency response of filters prove the workability of the designed AIs.DoktoraPh

Flexible Microelectromechanical filters for telecommunication electronics

The telecommunication electronics sector is under intensive growth and research owing to the much needed expansion in functionality and mobility. As part of this change, more flexible and multi-featured products are gaining popularity, paving the way for uninterrupted and high-speed mobile communications. As the telecommunication devices become lighter, smaller, and smarter, they pose stringent constraints and challenges to the researchers of integrated telecommunication electronics. This thesis addresses one such field of research namely, micromachined resonator based filters and introduces a novel design methodology by providing an overall ease and simplification during the design flow. Present day filter applications are both bulky and off chip. An alternative, in the form of surface micromachined filters, which introduces considerable size reduction, exhibits industry-standard Quality factors and provide on chip capability, is studied and expanded upon. The aim of this study is twice fold, one to allow the designers a method to design second order filters with greater flexibility than offered by hitherto standards and established procedures; two, to suggest an instructive guideline for extending the design process for higher order filters. The thesis also lays the foundation for fabrication of micromachined filters with mask fabrication, bill of materials, and processing experiments. It furthermore addresses the practical issues and constraints, such as aging, noise, and stability etc., which plague the transition of these research based prototypes to working systems