10 research outputs found

    Programmable flash interface and its application

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    ํ•™์œ„๋…ผ๋ฌธ (์„์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› ๊ณต๊ณผ๋Œ€ํ•™ ์ปดํ“จํ„ฐ๊ณตํ•™๋ถ€, 2017. 8. ๋ฏผ์ƒ๋ ฌ.NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ๋Š” ๋ฐ์ดํ„ฐ๊ฐ€ ์œ ์ง€๋˜๋Š” ๋น„ํœ˜๋ฐœ์„ฑ(Non-volatile) ๋ฉ”๋ชจ๋ฆฌ๋กœ ๊ธฐ์กด ํ•˜๋“œ ๋””์Šคํฌ๋ฅผ ๋Œ€์ฒดํ•˜๋Š” ์ €์žฅ๋งค์ฒด๋กœ ๊ฐ๊ด‘์„ ๋ฐ›์œผ๋ฉฐ ๋น ๋ฅด๊ฒŒ ๋ฐœ์ „ํ•˜์—ฌ ์ €์žฅ ๋งค์ฒด ์‹œ์žฅ์„ ์ ์œ ํ•ด ๋‚˜๊ฐ€๊ณ  ์žˆ๋‹ค. NAND ํ”Œ๋ž˜์‹œ ์ œํ’ˆ์ด ๊ฐ๊ด‘์„ ๋ฐ›์„์ˆ˜๋ก ๊ธฐ์ˆ  ๋ฐœ์ „๋„ ๋นจ๋ผ์ง€๊ณ  ์ƒˆ๋กœ์šด ์ œํ’ˆ ์ถœ์‹œ๋„ ๋นจ๋ผ์ง€๊ณ  ์žˆ์ง€๋งŒ ํ†ต์ผ๋œ ํ‘œ์ค€ ์ธํ„ฐํŽ˜์ด์Šค๊ฐ€ ์—†๊ธฐ ๋•Œ๋ฌธ์— NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ๋Š” ์ œํ’ˆ๋งˆ๋‹ค ์กฐ๊ธˆ์”ฉ ๋‹ค๋ฅธ ์ธํ„ฐํŽ˜์ด์Šค๋ฅผ ๊ฐ€์ง€๊ณ  ์žˆ๋‹ค. ์ด๋Ÿฌํ•œ ํ™˜๊ฒฝ์—์„œ๋Š” NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์ œ์–ด๊ธฐ์˜ ์œ ์—ฐ์„ฑ์ด ๊ด€๊ฑด์ด ๋  ๊ฒƒ์ด๋ฉฐ ์ž์นซ ์˜ค๋žœ ๊ธฐ๊ฐ„ ๋งŽ์€ ๋ˆ์„ ๋“ค์—ฌ์„œ ๊ฐœ๋ฐœํ•œ ์ œ์–ด๊ธฐ๋ฅผ ์งง์€ ์‹œ๊ฐ„๋ฐ–์— ์“ธ ์ˆ˜ ์—†๋Š” ๊ฒฝ์šฐ๊ฐ€ ๋ฐœ์ƒ ํ•  ์ˆ˜ ์žˆ๋‹ค. ๋ณธ ๋…ผ๋ฌธ์—์„œ๋Š” ์„œ๋กœ ๋‹ค๋ฅธ ์ธํ„ฐํŽ˜์ด์Šค๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ์ƒํ™ฉ์—์„œ ์ผ๊ด€์„ฑ์„ ์ œ๊ณตํ•˜๊ธฐ ์œ„ํ•œ ๋ฐฉ๋ฒ•์œผ๋กœ ํ”„๋กœ๊ทธ๋ž˜๋ฐ ๊ฐ€๋Šฅํ•œ ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์ธํ„ฐํŽ˜์ด์Šค๋ฅผ ์ •์˜ํ•˜๊ณ  ์ด๋ฅผ FPGAํ™˜๊ฒฝ์„ ์ด์šฉํ•œ NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์ œ์–ด๊ธฐ๋กœ ๊ตฌํ˜„ํ–ˆ๋‹ค. ํ”„๋กœ๊ทธ๋ž˜๋ฐ ๊ฐ€๋Šฅํ•œ ์ธํ„ฐํŽ˜์ด์Šค๋Š” ์„œ๋กœ ๋‹ค๋ฅธ ์ธํ„ฐํŽ˜์ด์Šค๋ฅผ ๊ฐ–๋Š” NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์ œํ’ˆ์— ์œ ์—ฐํ•˜๊ฒŒ ๋Œ€์‘ํ•  ์ˆ˜ ์žˆ์œผ๋ฉฐ ํ˜ธ์ŠคํŠธ์— ์ผ๊ด€์„ฑ์„ ์ œ๊ณตํ•  ์ˆ˜ ์žˆ์„ ๊ฒƒ์ด๋‹ค. ๋˜ํ•œ ์ด๋Ÿฌํ•œ ์œ ์—ฐํ•˜๊ณ  ์ผ๊ด€์„ฑ ์žˆ๋Š” ์ธํ„ฐํŽ˜์ด์Šค๋ฅผ ํ™œ์šฉํ•˜๊ธฐ ์œ„ํ•œ ์‘์šฉํ™˜๊ฒฝ์œผ๋กœ QoS(Quality of Service)๊ธฐ๋ฐ˜ ๊ณต์ • ๋Œ€๊ธฐ์—ด ์Šค์ผ€์ค„๋ง์„ ๊ตฌํ˜„ํ•˜์—ฌ ์„ฑ๋Šฅ๊ณผ ํšจ๊ณผ๋ฅผ ๊ฒ€์ฆํ–ˆ๋‹ค.1. ์„œ๋ก  1 1.1 ์—ฐ๊ตฌ ๋™๊ธฐ 1 1.2 ์—ฐ๊ตฌ ๋‚ด์šฉ 3 1.3 ๋…ผ๋ฌธ์˜ ๊ตฌ์„ฑ 4 2. ๋ฐฐ๊ฒฝ ์ง€์‹ ๋ฐ ๊ด€๋ จ ์—ฐ๊ตฌ 5 2.1 NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ 5 2.2 NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ๊ธฐ๋ฐ˜ ์ €์žฅ ์žฅ์น˜ 8 2.2.1 ํ”Œ๋ž˜์‹œ ๋ณ€ํ™˜ ๊ณ„์ธต 9 2.2.1.1 ์ฃผ์†Œ ๋ณ€ํ™˜ 9 2.2.1.2 ์“ฐ๋ ˆ๊ธฐ ์ˆ˜์ง‘ 10 2.2.1.3 ๋งˆ๋ชจ ํ‰์ค€ํ™” 11 2.2.2 ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์Šค์ผ€์ค„๋Ÿฌ 12 2.2.2.1 QoS ๊ธฐ๋ฐ˜ ์Šค์ผ€์ค„๋ง 13 2.2.2.2 ํ•˜๋“œ์›จ์–ด/์†Œํ”„ํŠธ์›จ์–ด ์Šค์ผ€์ค„๋ง 15 2.2.3 ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์ œ์–ด๊ธฐ 16 2.3 ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ์ธํ„ฐํŽ˜์ด์Šค 16 2.3.1 ONFI์™€ Toggle Mode ์ธํ„ฐํŽ˜์ด์Šค 17 2.3.2 NAND ํ”Œ๋ž˜์‹œ ์„ธ๋ถ€ ์ธํ„ฐํŽ˜์ด์Šค 18 2.3.2.1 ๋ฌผ๋ฆฌ ์ธํ„ฐํŽ˜์ด์Šค 19 2.3.2.2 ๋ฉ”๋ชจ๋ฆฌ ๊ตฌ์กฐ ์ธํ„ฐํŽ˜์ด์Šค 21 2.3.2.3 ๋ฐ์ดํ„ฐ ์ธํ„ฐํŽ˜์ด์Šค 24 2.3.2.4 ์—ฐ์‚ฐ ์ธํ„ฐํŽ˜์ด์Šค 25 2.3.2.5 ๋ช…๋ น ๋ฐ ํƒ€์ด๋ฐ ์ธํ„ฐํŽ˜์ด์Šค 26 3. ํ”„๋กœ๊ทธ๋ž˜๋ฐ ๊ฐ€๋Šฅํ•œ ํ”Œ๋ž˜์‹œ ์ธํ„ฐํŽ˜์ด์Šค 28 3.1 ํ”„๋กœ๊ทธ๋ž˜๋ฐ ๊ฐ€๋Šฅํ•œ ํ”Œ๋ž˜์‹œ ์ธํ„ฐํŽ˜์ด์Šค ์ •์˜ 28 3.1.1 ๋งˆ์ดํฌ๋กœ ์ฝ”๋“œ ํฌ๋งท 31 3.1.2 ๋งˆ์ดํฌ๋กœ ์ฝ”๋“œ ์‚ฐ์ˆ /๋…ผ๋ฆฌ ์—ฐ์‚ฐ 32 3.1.3 ๋งˆ์ดํฌ๋กœ ์ฝ”๋“œ ๋ถ„๊ธฐ ์—ฐ์‚ฐ 33 3.1.4 ๋งˆ์ดํฌ๋กœ ์ฝ”๋“œ ํŠน์ˆ˜ ์—ฐ์‚ฐ 33 3.1.5 ๋งˆ์ดํฌ๋กœ ์ฝ”๋“œ ์‹ ํ˜ธ ์—”์ง„ ๋ช…๋ น 34 3.2 ์ œ์–ด๊ธฐ ๋””์ž์ธ 35 3.2.1 ๋งˆ์ดํฌ๋กœ ์ฝ”๋“œ ์‹คํ–‰๊ธฐ 37 3.2.2 ๋งˆ์ดํฌ๋กœ ์ฝ”๋“œ ๋ฉ”๋ชจ๋ฆฌ 37 3.2.3 ์‹ ํ˜ธ ์—”์ง„ 37 3.2.4 ์ œ์–ด๊ธฐ์˜ ๋™์ž‘ 38 3.3 ์†Œํ”„ํŠธ์›จ์–ด๋กœ ๊ตฌํ˜„๋œ ๊ณต์ • ๋Œ€๊ธฐ์—ด ์Šค์ผ€์ค„๋ง 40 4. ์‹คํ—˜ ํ™˜๊ฒฝ ๋ฐ ํ‰๊ฐ€ 44 4.1 ์‹คํ—˜ ํ™˜๊ฒฝ 44 4.2 ์‹คํ—˜ ํ‰๊ฐ€ 46 5. ๊ฒฐ๋ก  51 ์ฐธ๊ณ ๋ฌธํ—Œ 52 Abstract 54Maste

    ๋‚ธ๋“œ ํ”Œ๋ž˜์‹œ ์ €์žฅ์žฅ์น˜์˜ ์„ฑ๋Šฅ ๋ฐ ์ˆ˜๋ช… ํ–ฅ์ƒ์„ ์œ„ํ•œ ํ”„๋กœ๊ทธ๋žจ ์ปจํ…์ŠคํŠธ ๊ธฐ๋ฐ˜ ์ตœ์ ํ™” ๊ธฐ๋ฒ•

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    ํ•™์œ„๋…ผ๋ฌธ (๋ฐ•์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ปดํ“จํ„ฐ๊ณตํ•™๋ถ€, 2019. 2. ๊น€์ง€ํ™.์ปดํ“จํŒ… ์‹œ์Šคํ…œ์˜ ์„ฑ๋Šฅ ํ–ฅ์ƒ์„ ์œ„ํ•ด, ๊ธฐ์กด์˜ ๋Š๋ฆฐ ํ•˜๋“œ๋””์Šคํฌ(HDD)๋ฅผ ๋น ๋ฅธ ๋‚ธ๋“œ ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ๊ธฐ๋ฐ˜ ์ €์žฅ์žฅ์น˜(SSD)๋กœ ๋Œ€์ฒดํ•˜๊ณ ์ž ํ•˜๋Š” ์—ฐ๊ตฌ๊ฐ€ ์ตœ๊ทผ ํ™œ๋ฐœํžˆ ์ง„ํ–‰ ๋˜๊ณ  ์žˆ๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ ์ง€์†์ ์ธ ๋ฐ˜๋„์ฒด ๊ณต์ • ์Šค์ผ€์ผ๋ง ๋ฐ ๋ฉ€ํ‹ฐ ๋ ˆ๋ฒจ๋ง ๊ธฐ์ˆ ๋กœ SSD ๊ฐ€๊ฒฉ์„ ๋™๊ธ‰ HDD ์ˆ˜์ค€์œผ๋กœ ๋‚ฎ์•„์กŒ์ง€๋งŒ, ์ตœ๊ทผ์˜ ์ฒจ๋‹จ ๋””๋ฐ”์ด์Šค ๊ธฐ์ˆ ์˜ ๋ถ€์ž‘์šฉ์œผ ๋กœ NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ์˜ ์ˆ˜๋ช…์ด ์งง์•„์ง€๋Š” ๊ฒƒ์€ ๊ณ ์„ฑ๋Šฅ ์ปดํ“จํŒ… ์‹œ์Šคํ…œ์—์„œ์˜ SSD์˜ ๊ด‘๋ฒ”์œ„ํ•œ ์ฑ„ํƒ์„ ๋ง‰๋Š” ์ฃผ์š” ์žฅ๋ฒฝ ์ค‘ ํ•˜๋‚˜์ด๋‹ค. ๋ณธ ๋…ผ๋ฌธ์—์„œ๋Š” ์ตœ๊ทผ์˜ ๊ณ ๋ฐ€๋„ ๋‚ธ๋“œ ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ์˜ ์ˆ˜๋ช… ๋ฐ ์„ฑ๋Šฅ ๋ฌธ์ œ๋ฅผ ํ•ด๊ฒฐํ•˜๊ธฐ ์œ„ํ•œ ์‹œ์Šคํ…œ ๋ ˆ๋ฒจ์˜ ๊ฐœ์„  ๊ธฐ์ˆ ์„ ์ œ์•ˆํ•œ๋‹ค. ์ œ์•ˆ ๋œ ๊ธฐ๋ฒ•์€ ์‘์šฉ ํ”„๋กœ ๊ทธ๋žจ์˜ ์“ฐ๊ธฐ ๋ฌธ๋งฅ์„ ํ™œ์šฉํ•˜์—ฌ ๊ธฐ์กด์—๋Š” ์–ป์„ ์ˆ˜ ์—†์—ˆ๋˜ ๋ฐ์ดํ„ฐ ์ˆ˜๋ช… ํŒจํ„ด ๋ฐ ์ค‘๋ณต ๋ฐ์ดํ„ฐ ํŒจํ„ด์„ ๋ถ„์„ํ•˜์˜€๋‹ค. ์ด์— ๊ธฐ๋ฐ˜ํ•˜์—ฌ, ๋‹จ์ผ ๊ณ„์ธต์˜ ๋‹จ์ˆœํ•œ ์ •๋ณด๋งŒ์„ ํ™œ์šฉํ–ˆ ๋˜ ๊ธฐ์กด ๊ธฐ๋ฒ•์˜ ํ•œ๊ณ„๋ฅผ ๊ทน๋ณตํ•จ์œผ๋กœ์จ ํšจ๊ณผ์ ์œผ๋กœ NAND ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ์˜ ์„ฑ๋Šฅ ๋ฐ ์ˆ˜๋ช…์„ ํ–ฅ์ƒ์‹œํ‚ค๋Š” ์ตœ์ ํ™” ๋ฐฉ๋ฒ•๋ก ์„ ์ œ์‹œํ•œ๋‹ค. ๋จผ์ €, ์‘์šฉ ํ”„๋กœ๊ทธ๋žจ์˜ I/O ์ž‘์—…์—๋Š” ๋ฌธ๋งฅ์— ๋”ฐ๋ผ ๊ณ ์œ ํ•œ ๋ฐ์ดํ„ฐ ์ˆ˜๋ช…๊ณผ ์ค‘ ๋ณต ๋ฐ์ดํ„ฐ์˜ ํŒจํ„ด์ด ์กด์žฌํ•œ๋‹ค๋Š” ์ ์„ ๋ถ„์„์„ ํ†ตํ•ด ํ™•์ธํ•˜์˜€๋‹ค. ๋ฌธ๋งฅ ์ •๋ณด๋ฅผ ํšจ๊ณผ ์ ์œผ๋กœ ํ™œ์šฉํ•˜๊ธฐ ์œ„ํ•ด ํ”„๋กœ๊ทธ๋žจ ์ปจํ…์ŠคํŠธ (์“ฐ๊ธฐ ๋ฌธ๋งฅ) ์ถ”์ถœ ๋ฐฉ๋ฒ•์„ ๊ตฌํ˜„ ํ•˜์˜€๋‹ค. ํ”„๋กœ๊ทธ๋žจ ์ปจํ…์ŠคํŠธ ์ •๋ณด๋ฅผ ํ†ตํ•ด ๊ฐ€๋น„์ง€ ์ปฌ๋ ‰์…˜ ๋ถ€ํ•˜์™€ ์ œํ•œ๋œ ์ˆ˜๋ช…์˜ NAND ํ”Œ ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ ๊ฐœ์„ ์„ ์œ„ํ•œ ๊ธฐ์กด ๊ธฐ์ˆ ์˜ ํ•œ๊ณ„๋ฅผ ํšจ๊ณผ์ ์œผ๋กœ ๊ทน๋ณตํ•  ์ˆ˜ ์žˆ๋‹ค. ๋‘˜์งธ, ๋ฉ€ํ‹ฐ ์ŠคํŠธ๋ฆผ SSD์—์„œ WAF๋ฅผ ์ค„์ด๊ธฐ ์œ„ํ•ด ๋ฐ์ดํ„ฐ ์ˆ˜๋ช… ์˜ˆ์ธก์˜ ์ •ํ™• ์„ฑ์„ ๋†’์ด๋Š” ๊ธฐ๋ฒ•์„ ์ œ์•ˆํ•˜์˜€๋‹ค. ์ด๋ฅผ ์œ„ํ•ด ์• ํ”Œ๋ฆฌ์ผ€์ด์…˜์˜ I/O ์ปจํ…์ŠคํŠธ๋ฅผ ํ™œ์šฉ ํ•˜๋Š” ์‹œ์Šคํ…œ ์ˆ˜์ค€์˜ ์ ‘๊ทผ ๋ฐฉ์‹์„ ์ œ์•ˆํ•˜์˜€๋‹ค. ์ œ์•ˆ๋œ ๊ธฐ๋ฒ•์˜ ํ•ต์‹ฌ ๋™๊ธฐ๋Š” ๋ฐ์ดํ„ฐ ์ˆ˜๋ช…์ด LBA๋ณด๋‹ค ๋†’์€ ์ถ”์ƒํ™” ์ˆ˜์ค€์—์„œ ํ‰๊ฐ€ ๋˜์–ด์•ผ ํ•œ๋‹ค๋Š” ๊ฒƒ์ด๋‹ค. ๋”ฐ๋ผ์„œ ํ”„ ๋กœ๊ทธ๋žจ ์ปจํ…์ŠคํŠธ๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ๋ฐ์ดํ„ฐ์˜ ์ˆ˜๋ช…์„ ๋ณด๋‹ค ์ •ํ™•ํžˆ ์˜ˆ์ธกํ•จ์œผ๋กœ์จ, ๊ธฐ์กด ๊ธฐ๋ฒ•์—์„œ LBA๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ๋ฐ์ดํ„ฐ ์ˆ˜๋ช…์„ ๊ด€๋ฆฌํ•˜๋Š” ํ•œ๊ณ„๋ฅผ ๊ทน๋ณตํ•œ๋‹ค. ๊ฒฐ๋ก ์ ์œผ ๋กœ ๋”ฐ๋ผ์„œ ๊ฐ€๋น„์ง€ ์ปฌ๋ ‰์…˜์˜ ํšจ์œจ์„ ๋†’์ด๊ธฐ ์œ„ํ•ด ์ˆ˜๋ช…์ด ์งง์€ ๋ฐ์ดํ„ฐ๋ฅผ ์ˆ˜๋ช…์ด ๊ธด ๋ฐ์ดํ„ฐ์™€ ํšจ๊ณผ์ ์œผ๋กœ ๋ถ„๋ฆฌ ํ•  ์ˆ˜ ์žˆ๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ, ์“ฐ๊ธฐ ํ”„๋กœ๊ทธ๋žจ ์ปจํ…์ŠคํŠธ์˜ ์ค‘๋ณต ๋ฐ์ดํ„ฐ ํŒจํ„ด ๋ถ„์„์„ ๊ธฐ๋ฐ˜์œผ๋กœ ๋ถˆํ•„์š”ํ•œ ์ค‘๋ณต ์ œ๊ฑฐ ์ž‘์—…์„ ํ”ผํ•  ์ˆ˜์žˆ๋Š” ์„ ํƒ์  ์ค‘๋ณต ์ œ๊ฑฐ๋ฅผ ์ œ์•ˆํ•œ๋‹ค. ์ค‘๋ณต ๋ฐ ์ดํ„ฐ๋ฅผ ์ƒ์„ฑํ•˜์ง€ ์•Š๋Š” ํ”„๋กœ๊ทธ๋žจ ์ปจํ…์ŠคํŠธ๊ฐ€ ์กด์žฌํ•จ์„ ๋ถ„์„์ ์œผ๋กœ ๋ณด์ด๊ณ  ์ด๋“ค์„ ์ œ์™ธํ•จ์œผ๋กœ์จ, ์ค‘๋ณต์ œ๊ฑฐ ๋™์ž‘์˜ ํšจ์œจ์„ฑ์„ ๋†’์ผ ์ˆ˜ ์žˆ๋‹ค. ๋˜ํ•œ ์ค‘๋ณต ๋ฐ์ดํ„ฐ๊ฐ€ ๋ฐœ์ƒ ํ•˜๋Š” ํŒจํ„ด์— ๊ธฐ๋ฐ˜ํ•˜์—ฌ ๊ธฐ๋ก๋œ ๋ฐ์ดํ„ฐ๋ฅผ ๊ด€๋ฆฌํ•˜๋Š” ์ž๋ฃŒ๊ตฌ์กฐ ์œ ์ง€ ์ •์ฑ…์„ ์ƒˆ๋กญ๊ฒŒ ์ œ์•ˆํ•˜์˜€๋‹ค. ์ถ”๊ฐ€์ ์œผ๋กœ, ์„œ๋ธŒ ํŽ˜์ด์ง€ ์ฒญํฌ๋ฅผ ๋„์ž…ํ•˜์—ฌ ์ค‘๋ณต ๋ฐ์ดํ„ฐ๋ฅผ ์ œ๊ฑฐ ํ•  ๊ฐ€๋Šฅ์„ฑ์„ ๋†’์ด๋Š” ์„ธ๋ถ„ํ™” ๋œ ์ค‘๋ณต ์ œ๊ฑฐ๋ฅผ ์ œ์•ˆํ•œ๋‹ค. ์ œ์•ˆ ๋œ ๊ธฐ์ˆ ์˜ ํšจ๊ณผ๋ฅผ ํ‰๊ฐ€ํ•˜๊ธฐ ์œ„ํ•ด ๋‹ค์–‘ํ•œ ์‹ค์ œ ์‹œ์Šคํ…œ์—์„œ ์ˆ˜์ง‘ ๋œ I/O ํŠธ๋ ˆ์ด์Šค์— ๊ธฐ๋ฐ˜ํ•œ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ํ‰๊ฐ€ ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ์—๋ฎฌ๋ ˆ์ดํ„ฐ ๊ตฌํ˜„์„ ํ†ตํ•ด ์‹ค์ œ ์‘์šฉ์„ ๋™์ž‘ํ•˜๋ฉด์„œ ์ผ๋ จ์˜ ํ‰๊ฐ€๋ฅผ ์ˆ˜ํ–‰ํ–ˆ๋‹ค. ๋” ๋‚˜์•„๊ฐ€ ๋ฉ€ํ‹ฐ ์ŠคํŠธ๋ฆผ ๋””๋ฐ”์ด์Šค์˜ ๋‚ด๋ถ€ ํŽŒ์›จ์–ด๋ฅผ ์ˆ˜์ •ํ•˜์—ฌ ์‹ค์ œ์™€ ๊ฐ€์žฅ ๋น„์Šทํ•˜๊ฒŒ ์„ค์ •๋œ ํ™˜๊ฒฝ์—์„œ ์‹คํ—˜์„ ์ˆ˜ํ–‰ํ•˜ ์˜€๋‹ค. ์‹คํ—˜ ๊ฒฐ๊ณผ๋ฅผ ํ†ตํ•ด ์ œ์•ˆ๋œ ์‹œ์Šคํ…œ ์ˆ˜์ค€ ์ตœ์ ํ™” ๊ธฐ๋ฒ•์ด ์„ฑ๋Šฅ ๋ฐ ์ˆ˜๋ช… ๊ฐœ์„  ์ธก๋ฉด์—์„œ ๊ธฐ์กด ์ตœ์ ํ™” ๊ธฐ๋ฒ•๋ณด๋‹ค ๋” ํšจ๊ณผ์ ์ด์—ˆ์Œ์„ ํ™•์ธํ•˜์˜€๋‹ค. ํ–ฅํ›„ ์ œ์•ˆ๋œ ๊ธฐ ๋ฒ•๋“ค์ด ๋ณด๋‹ค ๋” ๋ฐœ์ „๋œ๋‹ค๋ฉด, ๋‚ธ๋“œ ํ”Œ๋ž˜์‹œ ๋ฉ”๋ชจ๋ฆฌ๊ฐ€ ์ดˆ๊ณ ์† ์ปดํ“จํŒ… ์‹œ์Šคํ…œ์˜ ์ฃผ ์ €์žฅ์žฅ์น˜๋กœ ๋„๋ฆฌ ์‚ฌ์šฉ๋˜๋Š” ๋ฐ์— ๊ธ์ •์ ์ธ ๊ธฐ์—ฌ๋ฅผ ํ•  ์ˆ˜ ์žˆ์„ ๊ฒƒ์œผ๋กœ ๊ธฐ๋Œ€๋œ๋‹ค.Replacing HDDs with NAND flash-based storage devices (SSDs) has been one of the major challenges in modern computing systems especially in regards to better performance and higher mobility. Although the continuous semiconductor process scaling and multi-leveling techniques lower the price of SSDs to the comparable level of HDDs, the decreasing lifetime of NAND flash memory, as a side effect of recent advanced device technologies, is emerging as one of the major barriers to the wide adoption of SSDs in highperformance computing systems. In this dissertation, system-level lifetime improvement techniques for recent high-density NAND flash memory are proposed. Unlike existing techniques, the proposed techniques resolve the problems of decreasing performance and lifetime of NAND flash memory by exploiting the I/O context of an application to analyze data lifetime patterns or duplicate data contents patterns. We first present that I/O activities of an application have distinct data lifetime and duplicate data patterns. In order to effectively utilize the context information, we implemented the program context extraction method. With the program context, we can overcome the limitations of existing techniques for improving the garbage collection overhead and limited lifetime of NAND flash memory. Second, we propose a system-level approach to reduce WAF that exploits the I/O context of an application to increase the data lifetime prediction for the multi-streamed SSDs. The key motivation behind the proposed technique was that data lifetimes should be estimated at a higher abstraction level than LBAs, so we employ a write program context as a stream management unit. Thus, it can effectively separate data with short lifetimes from data with long lifetimes to improve the efficiency of garbage collection. Lastly, we propose a selective deduplication that can avoid unnecessary deduplication work based on the duplicate data pattern analysis of write program context. With the help of selective deduplication, we also propose fine-grained deduplication which improves the likelihood of eliminating redundant data by introducing sub-page chunk. It also resolves technical difficulties caused by its finer granularity, i.e., increased memory requirement and read response time. In order to evaluate the effectiveness of the proposed techniques, we performed a series of evaluations using both a trace-driven simulator and emulator with I/O traces which were collected from various real-world systems. To understand the feasibility of the proposed techniques, we also implemented them in Linux kernel on top of our in-house flash storage prototype and then evaluated their effects on the lifetime while running real-world applications. Our experimental results show that system-level optimization techniques are more effective over existing optimization techniques.I. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1.1 Garbage Collection Problem . . . . . . . . . . . . . 2 1.1.2 Limited Endurance Problem . . . . . . . . . . . . . 4 1.2 Dissertation Goals . . . . . . . . . . . . . . . . . . . . . . . 5 1.3 Contributions . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.4 Dissertation Structure . . . . . . . . . . . . . . . . . . . . . 7 II. Background . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 NAND Flash Memory System Software . . . . . . . . . . . 9 2.2 NAND Flash-Based Storage Devices . . . . . . . . . . . . . 10 2.3 Multi-stream Interface . . . . . . . . . . . . . . . . . . . . 11 2.4 Inline Data Deduplication Technique . . . . . . . . . . . . . 12 2.5 Related Work . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.5.1 Data Separation Techniques for Multi-streamed SSDs 13 2.5.2 Write Traffic Reduction Techniques . . . . . . . . . 15 2.5.3 Program Context based Optimization Techniques for Operating Systems . . . . . . . . 18 III. Program Context-based Analysis . . . . . . . . . . . . . . . . 21 3.1 Definition and Extraction of Program Context . . . . . . . . 21 3.2 Data Lifetime Patterns of I/O Activities . . . . . . . . . . . 24 3.3 Duplicate Data Patterns of I/O Activities . . . . . . . . . . . 26 IV. Fully Automatic Stream Management For Multi-Streamed SSDs Using Program Contexts . . 29 4.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4.2 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 4.2.1 No Automatic Stream Management for General I/O Workloads . . . . . . . . . 33 4.2.2 Limited Number of Supported Streams . . . . . . . 36 4.3 Automatic I/O Activity Management . . . . . . . . . . . . . 38 4.3.1 PC as a Unit of Lifetime Classification for General I/O Workloads . . . . . . . . . . . 39 4.4 Support for Large Number of Streams . . . . . . . . . . . . 41 4.4.1 PCs with Large Lifetime Variances . . . . . . . . . 42 4.4.2 Implementation of Internal Streams . . . . . . . . . 44 4.5 Design and Implementation of PCStream . . . . . . . . . . 46 4.5.1 PC Lifetime Management . . . . . . . . . . . . . . 46 4.5.2 Mapping PCs to SSD streams . . . . . . . . . . . . 49 4.5.3 Internal Stream Management . . . . . . . . . . . . . 50 4.5.4 PC Extraction for Indirect Writes . . . . . . . . . . 51 4.6 Experimental Results . . . . . . . . . . . . . . . . . . . . . 53 4.6.1 Experimental Settings . . . . . . . . . . . . . . . . 53 4.6.2 Performance Evaluation . . . . . . . . . . . . . . . 55 4.6.3 WAF Comparison . . . . . . . . . . . . . . . . . . . 56 4.6.4 Per-stream Lifetime Distribution Analysis . . . . . . 57 4.6.5 Impact of Internal Streams . . . . . . . . . . . . . . 58 4.6.6 Impact of the PC Attribute Table . . . . . . . . . . . 60 V. Deduplication Technique using Program Contexts . . . . . . 62 5.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 5.2 Selective Deduplication using Program Contexts . . . . . . . 63 5.2.1 PCDedup: Improving SSD Deduplication Efficiency using Selective Hash Cache Management . . . . . . 63 5.2.2 2-level LRU Eviction Policy . . . . . . . . . . . . . 68 5.3 Exploiting Small Chunk Size . . . . . . . . . . . . . . . . . 70 5.3.1 Fine-Grained Deduplication . . . . . . . . . . . . . 70 5.3.2 Read Overhead Management . . . . . . . . . . . . . 76 5.3.3 Memory Overhead Management . . . . . . . . . . . 80 5.3.4 Experimental Results . . . . . . . . . . . . . . . . . 82 VI. Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 6.1 Summary and Conclusions . . . . . . . . . . . . . . . . . . 88 6.2 Future Work . . . . . . . . . . . . . . . . . . . . . . . . . . 89 6.2.1 Supporting applications that have unusal program contexts . . . . . . . . . . . . . 89 6.2.2 Optimizing read request based on the I/O context . . 90 6.2.3 Exploiting context information to improve fingerprint lookups . . . . .. . . . . . 91 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92Docto

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    ํ•™์œ„๋…ผ๋ฌธ (๋ฐ•์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ์ „๊ธฐยท์ปดํ“จํ„ฐ๊ณตํ•™๋ถ€, 2016. 2. ๊น€์ง€ํ™.Replacing HDDs with NAND flash-based storage devices (SSDs) has been one of the major challenges in modern computing systems especially in regards to better performance and higher mobility. Although uninterrupted semiconductor process scaling and multi-leveling techniques lower the price of SSDs to the comparable level of HDDs, the decreasing lifetime of NAND flash memory, as a side effect of recent advanced device technologies, is emerging as one of the major barriers to the wide adoption of SSDs in high-performance computing systems. In this dissertation, we propose new cross-layer optimization techniques to extend the lifetime (in particular, endurance) of NAND flash memory. Our techniques are motivated by our key observation that erasing a NAND block with a lower voltage or at a slower speed can significantly improve NAND endurance. However, using a lower voltage in erase operations causes adverse side effects on other NAND characteristics such as write performance and retention capability. The main goal of the proposed techniques is to improve NAND endurance without affecting the other NAND requirements. We first present Dynamic Erase Voltage and Time Scaling (DeVTS), a unified framework to enable a system software to exploit the tradeoff relationship between the endurance and erase voltages/times of NAND flash memory. DeVTS includes erase voltage/time scaling and write capability tuning, each of which brings a different impact on the endurance, performance, and retention capabilities of NAND flash memory. Second, we propose a lifetime improvement technique which takes advantage of idle times between write requests when erasing a NAND block with a slower speed or when writing data to a NAND block erased with a lower voltage. We have implemented a DeVTS-enabled FTL, called dvsFTL, which optimally adjusts the erase voltage/time and write performance of NAND devices in an automatic fashion. Our experimental results show that dvsFTL can improve NAND endurance by 62%, on average, over DeVTS-unaware FTL with a negligible decrease in the overall write performance. Third, we suggest a comprehensive lifetime improvement technique which exploits variations of the retention requirements as well as the performance requirement of SSDs when writing data to a NAND block erased with a lower voltage. We have implemented dvsFTL+, an extended version of dvsFTL, which fully utilizes DeVTS by accurately predicting the write performance and retention requirements during run times. Our experimental results show that dvsFTL+ can further improve NAND endurance by more than 50% over dvsFTL while preserving all the NAND requirements. Lastly, we present a reliability management technique which prevents retention failure problems when aggressive retention-capability tuning techniques are employed in real environments. Our measurement results show that the proposed technique can recover corrupted data from retention failures up to 23 times faster over existing data recovery techniques. Furthermore, it can successfully recover severely retention-failed data, such as ones experienced 8 times longer retention times than the retention-time specification, that were not recoverable with the existing technique. Based on the evaluation studies for the developed lifetime improvement techniques, we verified that the cross-layer optimization approach has a significant impact on extending the lifetime of NAND flash-based storage devices. We expect that our proposed techniques can positively contribute to not only the wide adoption of NAND flash memory in datacenter environments but also the gradual acceleration of using flash as main memory.Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Dissertation Goals 3 1.3 Contributions 4 1.4 Dissertation Structure 5 Chapter 2 Background 7 2.1 Threshold Voltage Window of NAND Flash Memory 7 2.2 NAND Program Operation 10 2.3 Related Work 11 2.3.1 System-Level SSD Lifetime Improvement Techniques 12 2.3.2 Device-Level Endurance-Enhancing Technique 15 2.3.3 Cross-Layer Optimization Techniques Exploiting NAND Tradeoffs 17 Chapter 3 Dynamic Erase Voltage and Time Scaling 20 3.1 Erase Voltage and Time Scaling 22 3.1.1 Motivation 22 3.1.2 Erase Voltage Scaling 23 3.1.3 Erase Time Scaling 26 3.2 Write Capability Tuning 28 3.2.1 Write Performance Tuning 29 3.2.2 Retention Capability Tuning 30 3.2.3 Disturbance Resistance Tuning 33 3.3 NAND Endurance Model 34 Chapter 4 Lifetime Improvement Technique Using Write-Performance Tuning 39 4.1 Design and Implementation of dvsFTL 40 4.1.1 Overview 40 4.1.2 Write-Speed Mode Selection 41 4.1.3 Erase Voltage Mode Selection 44 4.1.4 Erase Speed Mode Selection 46 4.1.5 DeVTS-wPT Aware FTL Modules 47 4.2 Experimental Results 50 4.2.1 Experimental Settings 50 4.2.2 Workload Characteristics 53 4.2.3 Endurance Gain Analysis 54 4.2.4 Overall Write Throughput Analysis 56 4.2.5 Detailed Analysis 58 Chapter 5 Lifetime Improvement Technique Using Retention-Capability Tuning 60 5.1 Design and Implementation of dvsFTL+ 62 5.1.1 Overview 62 5.1.2 Retention Requirement Prediction 64 5.1.3 Maximization of Endurance Benefit 66 5.1.4 Minimization of Reclaim Overhead 68 5.2 Experimental Results 69 5.2.1 Experimental Settings 69 5.2.2 Workload Characteristics 70 5.2.3 Endurance Gain Analysis 72 5.2.4 NAND Requirements Analysis 73 5.2.5 Detailed Analysis of Retention-Time Predictor 76 5.2.6 Detailed Analysis of Endurance Gain 83 Chapter 6 Reliability Management Technique for NAND Flash Memory 87 6.1 Overview 89 6.2 Motivation 91 6.2.1 Limitations of the Existing Retention-Error Management Policy 91 6.2.2 Limitations of the Existing Retention-Failure Recovery Technique 92 6.3 Retention Error Recovery Technique 95 6.3.1 Charge Movement Model 95 6.3.2 A Selective Error-Correction Procedure 99 6.3.3 Implementation 100 6.4 Experimental Results 103 Chapter 7 Conclusions 108 7.1 Summary and Conclusions 108 7.2 Future Work 110 7.2.1 Lifetime Improvement Technique Exploiting The Other NAND Tradeoffs 110 7.2.2 Development of Extended Techniques for DRAM-Flash Hybrid Main Memory Systems 111 7.2.3 Development of Specialized SSDs 112 Bibliography 114 ์ดˆ ๋ก 122Docto
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