Mixed-signal CNN array chips for image processing

Due to their local connectivity and wide functional capabilities, cellular nonlinear networks (CNN) are excellent candidates for the implementation of image processing algorithms using VLSI analog parallel arrays. However, the design of general purpose, programmable CNN chips with dimensions required for practical applications raises many challenging problems to analog designers. This is basically due to the fact that large silicon area means large development cost, large spatial deviations of design parameters and low production yield. CNN designers must face different issues to keep reasonable enough accuracy level and production yield together with reasonably low development cost in their design of large CNN chips. This paper outlines some of these major issues and their solutions

Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes

Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad(SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode

Low Power Processor Architectures and Contemporary Techniques for Power Optimization – A Review

The technological evolution has increased the number of transistors for a given die area significantly and increased the switching speed from few MHz to GHz range. Such inversely proportional decline in size and boost in performance consequently demands shrinking of supply voltage and effective power dissipation in chips with millions of transistors. This has triggered substantial amount of research in power reduction techniques into almost every aspect of the chip and particularly the processor cores contained in the chip. This paper presents an overview of techniques for achieving the power efficiency mainly at the processor core level but also visits related domains such as buses and memories. There are various processor parameters and features such as supply voltage, clock frequency, cache and pipelining which can be optimized to reduce the power consumption of the processor. This paper discusses various ways in which these parameters can be optimized. Also, emerging power efficient processor architectures are overviewed and research activities are discussed which should help reader identify how these factors in a processor contribute to power consumption. Some of these concepts have been already established whereas others are still active research areas. © 2009 ACADEMY PUBLISHER

A 16 x 16 CMOS amperometric microelectrode array for simultaneous electrochemical measurements

There is a requirement for an electrochemical sensor technology capable of making multivariate measurements in environmental, healthcare, and manufacturing applications. Here, we present a new device that is highly parallelized with an excellent bandwidth. For the first time, electrochemical cross-talk for a chip-based sensor is defined and characterized. The new CMOS electrochemical sensor chip is capable of simultaneously taking multiple, independent electroanalytical measurements. The chip is structured as an electrochemical cell microarray, comprised of a microelectrode array connected to embedded self-contained potentiostats. Speed and sensitivity are essential in dynamic variable electrochemical systems. Owing to the parallel function of the system, rapid data collection is possible while maintaining an appropriately low-scan rate. By performing multiple, simultaneous cyclic voltammetry scans in each of the electrochemical cells on the chip surface, we are able to show (with a cell-to-cell pitch of 456 μm) that the signal cross-talk is only 12% between nearest neighbors in a ferrocene rich solution. The system opens up the possibility to use multiple independently controlled electrochemical sensors on a single chip for applications in DNA sensing, medical diagnostics, environmental sensing, the food industry, neuronal sensing, and drug discovery

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Modified Level Restorers Using Current Sink and Current Source Inverter Structures for BBL-PT Full Adder

Full adder is an essential component for the design and development of all types of processors like digital signal processors (DSP), microprocessors etc. In most of these systems adder lies in the critical path that affects the overall speed of the system. So enhancing the performance of the 1-bit full adder cell is a significant goal. In this paper, we proposed two modified level restorers using current sink and current source inverter structures for branch-based logic and pass-transistor (BBL-PT) full adder [1]. In BBL-PT full adder, there lies a drawback i.e. voltage step existence that could be eliminated in the proposed logics by using the current sink inverter and current source inverter structures. The proposed full adders are compared with the two standard and well-known logic styles, i.e. conventional static CMOS logic and Complementary Pass transistor Logic (CPL), demonstrated the good delay performance. The implementation of 8-bit ripple carry adder based on proposed full adders are finally demonstrated. The CPL 8-bit RCA and as well as the proposed ones is having better delay performance than the static CMOS and BBL-PT 8-bit RCA. The performance of the proposed BBL-PT cell with current sink & current source inverter structures are examined using PSPICE and the model parameters of a 0.13 µm CMOS process

Layout regularity metric as a fast indicator of process variations

Integrated circuits design faces increasing challenge as we scale down due to the increase of the effect of sensitivity to process variations. Systematic variations induced by different steps in the lithography process affect both parametric and functional yields of the designs. These variations are known, themselves, to be affected by layout topologies. Design for Manufacturability (DFM) aims at defining techniques that mitigate variations and improve yield. Layout regularity is one of the trending techniques suggested by DFM to mitigate process variations effect. There are several solutions to create regular designs, like restricted design rules and regular fabrics. These regular solutions raised the need for a regularity metric. Metrics in literature are insufficient for different reasons; either because they are qualitative or computationally intensive. Furthermore, there is no study relating either lithography or electrical variations to layout regularity. In this work, layout regularity is studied in details and a new geometrical-based layout regularity metric is derived. This metric is verified against lithographic simulations and shows good correlation. Calculation of the metric takes only few minutes on 1mm x 1mm design, which is considered fast compared to the time taken by simulations. This makes it a good candidate for pre-processing the layout data and selecting certain areas of interest for lithographic simulations for faster throughput. The layout regularity metric is also compared against a model that measures electrical variations due to systematic lithographic variations. The validity of using the regularity metric to flag circuits that have high variability using the developed electrical variations model is shown. The regularity metric results compared to the electrical variability model results show matching percentage that can reach 80%, which means that this metric can be used as a fast indicator of designs more susceptible to lithography and hence electrical variations

On Regularity and Integrated DFM Metrics

Transistor geometries are well into the nanometer regime, keeping with Moore's Law. With this scaling in geometry, problems not significant in the larger geometries have come to the fore. These problems, collectively termed variability, stem from second-order effects due to the small geometries themselves and engineering limitations in creating the small geometries. The engineering obstacles have a few solutions which are yet to be widely adopted due to cost limitations in deploying them. Addressing and mitigating variability due to second-order effects comes largely under the purview of device engineers and to a smaller extent, design practices. Passive layout measures that ease these manufacturing limitations by regularizing the different layout pitches have been explored in the past. However, the question of the best design practice to combat systematic variations is still open. In this work we explore considerations for the regular layout of the exclusive-OR gate, the half-adder and full-adder cells implemented with varying degrees of regularity. Tradeoffs like complete interconnect unidirectionality, and the inevitable introduction of vias are qualitatively analyzed and some factors affecting the analysis are presented. Finally, results from the Calibre Critical Feature Analysis (CFA) of the cells are used to evaluate the qualitative analysis