Analog Circuits in Ultra-Deep-Submicron CMOS

Modern and future ultra-deep-submicron (UDSM) technologies introduce several new problems in analog design. Nonlinear output conductance in combination with reduced voltage gain pose limits in linearity of (feedback) circuits. Gate-leakage mismatch exceeds conventional matching tolerances. Increasing area does not improve matching any more, except if higher power consumption is accepted or if active cancellation techniques are used. Another issue is the drop in supply voltages. Operating critical parts at higher supply voltages by exploiting combinations of thin- and thick-oxide transistors can solve this problem. Composite transistors are presented to solve this problem in a practical way. Practical rules of thumb based on measurements are derived for the above phenomena

Current-Mode Techniques for the Implementation of Continuous- and Discrete-Time Cellular Neural Networks

This paper presents a unified, comprehensive approach to the design of continuous-time (CT) and discrete-time (DT) cellular neural networks (CNN) using CMOS current-mode analog techniques. The net input signals are currents instead of voltages as presented in previous approaches, thus avoiding the need for current-to-voltage dedicated interfaces in image processing tasks with photosensor devices. Outputs may be either currents or voltages. Cell design relies on exploitation of current mirror properties for the efficient implementation of both linear and nonlinear analog operators. These cells are simpler and easier to design than those found in previously reported CT and DT-CNN devices. Basic design issues are covered, together with discussions on the influence of nonidealities and advanced circuit design issues as well as design for manufacturability considerations associated with statistical analysis. Three prototypes have been designed for l.6-pm n-well CMOS technologies. One is discrete-time and can be reconfigured via local logic for noise removal, feature extraction (borders and edges), shadow detection, hole filling, and connected component detection (CCD) on a rectangular grid with unity neighborhood radius. The other two prototypes are continuous-time and fixed template: one for CCD and other for noise removal. Experimental results are given illustrating performance of these prototypes

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

Power management circuit: design and comparison of efficient techniques for ultra-low power analog switch and rectifier circuit

Dissertação de mestrado integrado em Engenharia Eletrónica Industrial e Computadores, Instrumentação e Microssistemas EletrónicosA presente dissertação de mestrado apresenta um estudo na área de CMOS em circuitos analógicos/digitais para extração e conversão de potência adequado para aplicações em energy harvesting. As principais contribuições científicas deste trabalho são: o desenvolvimento de circuitos de baixo consumo energético, tais como um interruptor analógico e um retificador que podem extrair e converter eficientemente a potência de saída do energy harvester. Com os dois circuitos apresentados na presente dissertação, é possível alimentar um nó de uma rede de sensores sem fios. Estes circuitos foram projetados utilizando a tecnologia CMOS de 130 nm e as respetivas simulações foram realizadas utilizando o software Cadence Virtuoso Analog Environment. Neste trabalho projetou-se novo interruptor analógico para aplicações em energy harvesting com especial atenção para a obtenção de um baixo consumo energético. A configuração apresentada consegue atingir uma baixa resistência, quando em condução (ON), e evitar correntes reversas indesejadas provenientes da carga. Os resultados das simulações revelam que o circuito: consome uma potência de 200.8 nW; atinge uma baixa resistência, quando em condução, de 216 Ω; gera uma baixa corrente de fuga de 44 pA. Assim sendo, é possível verificar que este circuito consegue operar com um baixo consumo, baixa tensão e com uma baixa frequência. Para além disso, o mesmo interruptor analógico consegue realizar a técnica de up-conversion dentro do circuito de controlo de potência, o que indica a possibilidade de o mesmo contribuir para uma aplicação real com energy harvesters vibracionais. O retificador em CMOS proposto é constituído por dois estágios: um passivo com um conversor de tensão negativa; e um outro estágio com um díodo ativo controlado por um circuito de cancelamento de threshold. O primeiro estágio é responsável por retificar completamente o sinal de entrada com uma queda de tensão de 1 mV, enquanto que o último tem a função de reduzir a corrente reversa indesejada, o que consequentemente consegue aumentar a potência transferida para a carga. Deste modo, o circuito consegue atingir uma eficiência em tensão e potência de 99 % e 90%, respetivamente, para um sinal de entrada com 0.45 V de amplitude e para cargas resistivas de valor baixo. Ainda assim, este circuito consegue funcionar a uma banda de frequências desde os 800 Hz até 51.2 kHz, o que se revela ser promissor para a aplicação prática deste projeto.The master dissertation presents a study in the area of mixed analog/digital CMOS power extraction and conversion circuits for Power Management Circuit (PMC) suitable for energy harvesting applications. The main contributions of the work are the development of low power circuits, such as an Analog Switch and a Rectifier, that can efficiently extract and convert the output power of the vibrational energy harvester into suitable electric energy for powering a Wireless Sensor Network (WSN) node. The circuit components were fully designed in the standard 130 nm CMOS process, and the respective simulation experiments were carried out using the Cadence Virtuoso Analog Environment. A new Analog Switch was designed for energy harvesting applications with special consideration for achieving low power consumption. The proposed structure can achieve a reduced ON-resistance and avoid the reverse leakage current from the load. Simulation results reveal a power consumption of about 200.8 nW, a low ON-resistance of 244.6 Ω, and a low leakage current of around 44 pA, which indicates that the analog switch has features of low power consumption, low voltage, and low-frequency operation. Furthermore, this switching circuit is suitable for performing the up-conversion technique in the PMC, which may contribute to the real application of vibrational energy harvesters. The proposed CMOS Rectifier consists of two stages, one passive stage with a negative voltage converter, and another stage with an active diode controlled by a threshold cancellation circuit. The former stage conducts the signal full-wave rectification with a voltage drop of 1 mV while the latter reduces the reverse leakage current, consequently enhancing the output power delivered to the ohmic load. As a result, the rectifier can achieve a voltage and a power conversion efficiency of over 99 % and 90 %, respectively, for an input voltage of 0.45 V and low ohmic loads. This circuit works for an operating frequency range from 800 Hz to 51.2 kHz, which is promising for practical applications

High-speed Time-interleaved Digital-to-Analog Converter (TI-DAC) for Self-Interference Cancellation Applications

Nowadays, the need for higher data-rate is constantly growing to enhance the quality of the daily communication services. The full-duplex (FD) communication is exemplary method doubling the data-rate compared to half-duplex one. However, part of the strong output signal of the transmitter interferes to the receiver-side because they share the same antenna with limited attenuation and, as a result, the receiver’s performance is corrupted. Hence, it is critical to remove the leakage signal from the receiver’s path by designing another block called self-interference cancellation (SIC). The main goal of this dissertation is to develop the SIC block embedded in the current-mode FD receivers. To this end, the regenerated cancellation current signal is fed to the inputs of the base-band filter and after the mixer of a (direct-conversion) current-mode FD receiver. Since the pattern of the transmitter (the digital signal generated by DSP) is known, a high-speed digital-to-Analog converter (DAC) with medium-resolution can perfectly suppress main part of the leakage on the receiver path. A capacitive DAC (CDAC) is chosen among the available solutions because it is compatible with advanced CMOS technology for high-speed application and the medium-resolution designs. Although the main application of the design is to perform the cancellation, it can also be employed as a stand-alone DAC in the Analog (I/Q) transmitter. The SIC circuitry includes a trans-impedance amplifier (TIA), two DACs, high-speed digital circuits, and built-in-self-test section (BIST). According to the available specification for full-duplex communication system, the resolution and working frequency of the CDAC are calculated (designed) equal to 10-bit (3 binary+ 2 binary + 5 thermometric) and 1GHz, respectively. In order to relax the design of the TIA (settling time of the DAC), the CDAC implements using 2-way time-interleaved (TI) manner (the effective SIC frequency equals 2GHz) without using any calibration technique. The CDAC is also developed with the split-capacitor technique to lower the negative effects of the conventional binary-weighted DAC. By adding one extra capacitor on the left-side of the split-capacitor, LSB-side, the value of the split-capacitor can be chosen as an integer value of the unit capacitor. As a result, it largely enhances the linearity of the CADC and cancellation performance. If the block works as a stand-alone DAC with non-TI mode, the digital input code representing a Sinus waveform with an amplitude 1dB less than full-scale and output frequency around 10.74MHz, chosen by coherent sampling rule, then the ENOB, SINAD, SFDR, and output signal are 9.4-bit, 58.2 dB, 68.4dBc, and -9dBV. The simulated value of the |DNL| (static linearity) is also less than 0.7. The similar simulation was done in the SIC mode while the capacitive-array woks in the TI mode and cancellation current is set to the full-scale. Hence, the amount of cancelling the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. equals 51.3dB, 15.1 dB, 24dBc, 66.4 dB. The designed SIC cannot work as a closed-loop design. The layout was optimally drawn in order to minimize non-linearity, the power-consumption of the decoders, and reduce the complexity of the DAC. By distributing the thermometric cells across the array and using symmetrical switching scheme, the DAC is less subjected to the linear and gradient effect of the oxide. Based on the post-layout simulation results, the deviation of the design after drawing the layout is studied. To compare the results of the schematic and post-layout designs, the exact conditions of simulation above (schematic simulations) are used. When the block works as a stand-alone CDAC, the ENOB, SINAD, SFDR are 8.5-bit, 52.6 dB, 61.3 dBc. The simulated value of the |DNL| (static linearity) is also limited to 1.3. Likewise, the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. are equal to 44dB, 11.7 dB, 19 dBc, 55.7 dB