Flow conveying and diagnosis with carbon nanotube arrays

Dense arrays of aligned carbon nanotubes are designed into strips, nanowicks, as a miniature wicking element for liquid delivery and potential microfluidic chemical analysis devices. Liquid wicks away along the nanowicks spontaneously. This delivery function of nanowicks enables novel fluid transport devices to run without any power input, moving parts or external pump. Flow around the opaque nanotubes can be detected either directly or indirectly. Direct signals of the flow come out of dyed liquid or from the liquid–air interface; indirect signals are detected through observing surface-tension-induced deformation and dislocation of the nanotubes. Here we show that flow progression around and inside nanowicks is sensitive to liquid properties. Different flow progression leaves different traces of liquid. These traces not only allow liquid diagnosis any time after sampling, but also enable analysis of flow at a nanoscale resolution with scanning electron microscopy

Process-induced Structural Variability-aware Performance Optimization for Advanced Nanoscale Technologies

Department of Electrical EngineeringAs the CMOS technologies reach the nanometer regime through aggressive scaling, integrated circuits (ICs) encounter scaling impediments such as short channel effects (SCE) caused by reduced ability of gate control on the channel and line-edge roughness (LER) caused by limits of the photolithography technologies, leading to serious device parameter fluctuations and makes the circuit analysis difficult. In order to overcome scaling issues, multi-gate structures are introduced from the planar MOSFET to increase the gate controllability. The goal of this dissertation is to analyze structural variations induced by manufacturing process in advanced nanoscale devices and to optimize its impacts in terms of the circuit performances. If the structural variability occurs, aside from the endeavor to reduce the variability, the impact must be taken into account at the design level. Current compact model does not have device structural variation model and cannot capture the impact on the performance/power of the circuit. In this research, the impacts of structural variation in advanced nanoscale technology on the circuit level parameters are evaluated and utilized to find the optimal device shape and structure through technology computer-aided-design (TCAD) simulations. The detail description of this dissertation is as follows: Structural variation for nanoscale CMOS devices is investigated to extend the analysis approach to multi-gate devices. Simple and accurate modeling that analyzes non-rectilinear gate (NRG) CMOS transistors with a simplified trapezoidal approximation method is proposed. The electrical characteristics of the NRG gate, caused by LER, are approximated by a trapezoidal shape. The approximation is acquired by the length of the longest slice, the length of the smallest slice, and the weighting factor, instead of taking the summation of all the slices into account. The accuracy can even be improved by adopting the width-location-dependent factor (Weff). The positive effect of diffusion rounding at the transistor source side of CMOS is then discussed. The proposed simple layout method provides boosting the driving strength of logic gates and also saving the leakage power with a minimal area overhead. The method provides up to 13% speed up and also saves up to 10% leakage current in an inverter simulation by exploiting the diffusion rounding phenomena in the transistors. The performance impacts of the trapezoidal fin shape of a double-gate FinFET are then discussed. The impacts are analyzed with TCAD simulations and optimal trapezoidal angle range is proposed. Several performance metrics are evaluated to investigate the impact of the trapezoidal fin shape on the circuit operation. The simulations show that the driving capability improves, and the gate capacitance increases as the bottom fin width of the trapezoidal fin increases. The fan-out 4 (FO4) inverter and ring-oscillator (RO) delay results indicate that careful optimization of the trapezoidal angle can increase the speed of the circuit because the ratios of the current and capacitance have different impacts depending on the trapezoidal angle. Last but not least, the electrical characteristics of a double-gate-all-around (DGAA) transistor with an asymmetric channel width using device simulations are also investigated in this work. The DGAA FET, a kind of nanotube field-effect transistor (NTFET), can solve the problem of loss of gate controllability of the channel and provide improved short-channel behavior. Simulation results reveal that, according to the carrier types, the location of the asymmetry has a different effect on the electrical properties of the devices. Thus, this work proposes the n/p DGAA FET structure with an asymmetric channel width to form the optimal inverter. Various electrical metrics are analyzed to investigate the benefits of the optimal inverter structure over the conventional GAA inverter structure. In the optimum structure, 27% propagation delay and 15% leakage power improvement can be achieved. Analysis and optimization for device-level variability are critical in integrated circuit designs of advanced technology nodes. Thus, the proposed methods in this dissertation will be helpful for understanding the relationship between device variability and circuit performance. The research for advanced nanoscale technologies through intensive TCAD simulations, such as FinFET and GAA, suggests the optimal device shape and structure. The results provide a possible solution to design high performance and low power circuits with minimal design overhead.ope

Helium Ion Microscopy

Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolution microscopy and nano-fabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nano-structures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as Neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.Comment: Revised versio

Conference of Microelectronic Research 1997

https://scholarworks.rit.edu/meec_archive/1006/thumbnail.jp

Design, development and simulation of sub-lithographic process for patterning nm scale features

The ability to create sub-lithographic nm-scale features without the need of high-end lithography tools will create new opportunities for the electronics industry. Most current technologies are lithography dependent and inherit associated CD variations. The mainstay of this work is mathematical modeling, simulation and verification of a revolutionary void transfer process for patterning nm scale features originally introduced by Breitwisch et al. at IBM. The technique studied involves intentional creation of voids using a conformal chemical vapor deposition (CVD) followed by controlled etch-back to form nanoscale pores. This method provides features that are independent of lithographically defined parent holes and exhibit lower critical dimension (CD) variations. It offers efficient low thermal budget and backend process compatible integration scheme that requires just one additional mask level. To the best of author\u27s knowledge no simulation study of the void transfer process has been reported in the literature so far. Thus, this project initiated scores of `firsts\u27 towards the development of a reliable nano-patterning technique and a robust process infrastructure for future projects at RIT. The pores with diameter of 130 nm were obtained i.e. an impressive ~7X reduction from lithographically defined hole of 714 nm using conventional i-line lithography. Critical parameters affecting the void formation and the final pore size have been identified and modeled. Simulation of the void transfer process has been investigated using plasma etch module of `Elite\u27 by Silvaco that employs 2-D Monte Carlo ion transport modeling. The results of this investigation show that the geometrical design parameters can be coupled with the plasma process simulations to develop an efficient module for the void transfer process

Performance-Based Optical Proximity Correction

Ph.DDOCTOR OF PHILOSOPH

Investigations of Surface-Tension Effects Due to Small-Scale Complex Boundaries

The earliest man-made irrigation systems in recorded history date back to the ancient Egypt and Mesopotamia era. After thousands of years of experience, exploration, and experimenting, mankind have learned how to construct canals and dams and use pipes and pumps to direct and control water flow, but till this day, there are still some behaviors of water and other simple fluids that surprise us. One such example is the lotus effect: a surface-tension effect which allows raindrops to roll freely on a lotus leaf as if they were drops of mercury. One of the key factors that determine how a fluid system behave is the size-scale. Fluids flow at small scales very differently than they do at large scales. The standard comparing to which small and large are defined is the capillary length. A number of surface-tension related phenomena are unfamiliar because they are only noticeable at length-scales of a few millimeters or below, and they look nothing like what we would expect fluids to behave when dominated by gravity. As fascinating as many of them may seem at first glance, surface-tension phenomena are actually not that far away from our daily lives. Surface tension is everywhere because it costs energy to create areas of surfaces and interfaces, just like it costs energy to deform a solid (resulting in elasticity) or to elevate a weight (resulting in gravity). To minimize energy, a surface or an interface has the tendency to contract, and this tendency generates surface tension. The size of a system significantly affects the relative strengths of surface-tension effects comparing to effects of body forces, most commonly gravity. By equating the estimated magnitudes of surface tension and gravitational forces of a system, a length scale, know as the capillary length, can be defined. The capillary length of water on earth is about 2.7 mm. At the length scale of everyday objects, which is usually above the capillary length, surface-tension effects are not always prominent, because at those scales the competing force, gravity, is often much stronger. That is why the surface of a glass of water is more or less flat. However, as the size-scale decreases, surface tension decreases a lot slower than gravity, so when the size of a fluid system gets down to below the capillary length, surface tension takes over. One of the defining characteristics of this moment in human history, is the tremendous efforts we are putting into the research and engineering of micro- and nano-scale materials and structures − systems where surface tension is often the predominant force. It is important to study surface-tension effects so that we can use them to our advantage. In this Ph.D. dissertation, we have investigated some important surface-tension phenomena including capillarity, wetting, and wicking. We mainly focus on the geometric aspects of these problems, and to learn about how structures affect properties. Understanding these phenomena can help develop fabrication methods (Chapter 2), study surface properties (Chapter 3), and design useful devices (Chapter 4) at scales below the capillary length. In the first project (Chapter 2), we used numerical simulations and experiments to study the meniscus of a fluid confined in capillaries with complicated cross-sectional geometries. In the simulations, we computed the three-dimensional shapes of the menisci formed in polygonal and star-shaped capillaries with sharp or rounded corners. Height variations across the menisci were used to quantify the effect of surface tension. Analytical solutions were derived for all the cases where the cross-sectional geometry was a regular polygon or a regular star-shape. Power indices that characterize the effects of corner rounding were extracted from simulation results. These findings can serve as guide for fabrications of unconventional three-dimensional structures in Capillary Force Lithography experiments [J. Feng (2011) (a)]. Experimental demonstrations of the working principle was also performed. Although quantitative matching between simulation and experimental results was not achieved due to the limitation of material properties, clear qualitative trends were observed and interesting three-dimensional nano-structures were produced. A second project (Chapter 3) focused on developing techniques to produce three-dimensional hierarchically structured superhydrophobic surfaces with high aspect ratios. We experimented with two different high-throughput electron-beam-lithography processes featuring single and dual electron-beam exposures. After a surface modification procedure with a hydrophobic silane, the structured surfaces exhibited two distinct superhydrophobic behaviors − high and low adhesion. While both types of superhydrophobic surfaces exhibited very high (approximately 160_) water advancing contact angles, the water receding contact angles on these two different types of surfaces differed by about 50_ _ 60_, with the low-adhesion surfaces at about 120_ _ 130_ and the high-adhesion surfaces at about 70_ _ 80_. Characterizations of both the microscopic structures and macroscopic wetting properties of these product surfaces allowed us to pinpoint the structural features responsible for specific wetting properties. It is found that the advancing contact angle was mainly determined by the primary structures while the receding contact angle is largely affected by the side-wall slope of the secondary features. This study established a platform for further exploration of the structure aspects of surface wettability [J. Feng (2011) (b)]. In the third and final project (Chapter 4), we demonstrated a new type of microfluidic channel that enable asymmetric wicking of wetting fluids based on structure-induced direction-dependent surface-tension effect. By decorating the side-walls of open microfluidic channels with tilted fins, we were able to experimentally demonstrate preferential wicking behaviors of various IPA-water mixtures with a range of contact angles in these channels. A simplified 2D model was established to explain the wicking asymmetry, and a complete 3D model was developed to provide more accurate quantitative predictions. The design principles developed in this study provide an additional scheme for controlling the spreading of fluids [J. Feng (2012)]. The research presented in this dissertation spreads out across a wide range of physical phenomena (wicking, wetting, and capillarity), and involves a number of computational and experimental techniques, yet all of these projects are intrinsically united under a common theme: we want to better understand how simple fluids respond to small-scale complex surface structures as manifestations of surface-tension effects. We hope our findings can serve as building blocks for a larger scale endeavor of scientific research and engineering development. After all, the pursue of knowledge is most meaningful if the results improve the well-being of the society and the advancement of humanity