Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Effective mobility measurements have been made at 4.2 K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%

Interface depinning versus absorbing-state phase transitions

According to recent numerical results from lattice models, the critical exponents of systems with many absorbing states and an order parameter coupled to a non-diffusive conserved field coincide with those of the linear interface depinning model within computational accuracy. In this paper the connection between absorbing state phase transitions and interface pinning in quenched disordered media is investigated. For that, we present a mapping of the interface dynamics in a disordered medium into a Langevin equation for the active-site density and show that a Reggeon-field-theory like description, coupled to an additional non-diffusive conserved field, appears rather naturally. Reciprocally, we construct a mapping from a discrete model belonging in the absorbing state with-a-conserved-field class to a discrete interface equation, and show how a quenched disorder is originated. We discuss the character of the possible noise terms in both representations, and overview the critical exponent relations. Evidence is provided that, at least for dimensions larger that one, both universality classes are just two different representations of the same underlying physics.Comment: 8 page

Telecom photon interface of solid-state quantum nodes

Solid-state spins such as nitrogen-vacancy (NV) center are promising platforms for large-scale quantum networks. Despite the optical interface of NV center system, however, the significant attenuation of its zero-phonon-line photon in optical fiber prevents the network extended to long distances. Therefore a telecom-wavelength photon interface would be essential to reduce the photon loss in transporting quantum information. Here we propose an efficient scheme for coupling telecom photon to NV center ensembles mediated by rare-earth doped crystal. Specifically, we proposed protocols for high fidelity quantum state transfer and entanglement generation with parameters within reach of current technologies. Such an interface would bring new insights into future implementations of long-range quantum network with NV centers in diamond acting as quantum nodes.Comment: 10 pages, 5 figure

Negative Differential Resistance Induced by Mn Substitution at SrRuO3/Nb:SrTiO3 Schottky Interfaces

We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the junction ideality factor indicates an increased spatial inhomogeneity of the interface potential with substitution. Furthermore, negative differential resistance was observed at low temperatures, indicating the formation of a resonant state by Mn substitution. By spatially varying the position of the Mn dopants across the interface with single unit cell control, we can isolate the origin of this resonant state to the interface SrRuO$_3$ layer. These results demonstrate a conceptually different approach to controlling interface states by utilizing the highly sensitive response of conducting perovskites to impurities

Long-Range triplet Josephson Current Modulated by the Interface Magnetization Texture

We have investigated the Josephson coupling between two s-wave superconductors separated by the ferromagnetic trilayers with noncollinear magnetization. We find that the long-range triplet critical current will oscillate with the strength of the exchange field and the thickness of the interface layer, when the interface magnetizations are orthogonal to the central magnetization. This feature is induced by the spatial oscillations of the spin-triplet state |\uparrow\downarrow>+|\downarrow\uparrow> in the interface layer. Moreover, the critical current can exhibit a characteristic nonmonotonic behavior, when the misalignment angle between interface magnetization and central ferromagnet increases from 0 to \pi/2. This peculiar behavior will take place under the condition that the original state of the junction with the parallel magnetizations is the \pi state

Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements

The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements. Two types of photodiode and several thick-oxide-FETs were manufactured using a 0.18-µm CMOS image sensor process and exposed to 10-keV X-ray from 3 krad to 1 Mrad. It is shown that the radiation induced trapped charge extends the space charge region at the oxide interface, leading to an enhancement of interface state SRH generation current. Isochronal annealing tests show that STI interface states anneal out at temperature lower than 100°C whereas about a third of the trapped charge remains after 30 min at 300°C

The state-private interface in public service provision

Political theory sets out a strong case for the state to play a major role in public service provision. Yet services are often provided by a range of state and non-state actors as well as by collaborative partnerships. This paper surveys the literature, seeking to map arrangements in developing countries and to understand the politics of different types of service provision