Cutting Edge Nanotechnology

The main purpose of this book is to describe important issues in various types of devices ranging from conventional transistors (opening chapters of the book) to molecular electronic devices whose fabrication and operation is discussed in the last few chapters of the book. As such, this book can serve as a guide for identifications of important areas of research in micro, nano and molecular electronics. We deeply acknowledge valuable contributions that each of the authors made in writing these excellent chapters

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and non-strained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and nonstrained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes