Wide Bandgap Based Devices

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits

III-V nitrides for electronic and UV applications

AbstractTremendous progress has been made in recent years in the growth, doping and processing technologies of the wide bandgap semiconductors. The principal driving force behind this activity is the potential use of, for example, the 1114 nitrides in high-power, high-temperature, high-frequency electronic and optical devices resistant to radiation damage. This article reports the current state of the art for producing some selected devices from the III-V nitrides

Wide-bandgap electronics

AbstractThe Spring Materials Research Society meeting in San Francisco included Symposium-T on wide-bandgap semiconductors. This topic is hot - both literally and metaphorically - and advances cover both research and commercial devices. Progress was reported on high-power, high-voltage, high-temperature devices that use gallium nitride and silicon carbide to offer stable operation parameters at junction temperatures over 250°C

A STUDY FOCUSING ON THE EFFECTS OF HTOL STRESS ON THE LUMINESCENCE SPECTRUM OF GAN DIODES TO CHARACTERIZE COMPONENT DEGRADATION

Wide bandgap (WBG) semiconductor technology allows devices to be operated at higher voltages, currents, temperatures, and frequencies than does conventional silicon-based narrow bandgap semiconductors. These characteristics are advantageous to military applications, such as uses in power converters, weapons, and radar systems. Notably, WBG semiconductors have advantages where cooling and space availability for components are concerns, such as unmanned underwater platforms. The ability to monitor the health and performance of these devices passively and remotely would reduce the man-hours required for preventative maintenance; it would also reduce the needs for invasive troubleshooting and needless component replacement. This thesis demonstrates the abilities to measure and analyze the electroluminescence spectrum of WBG devices using a custom-built high-temperature operating life (HTOL) test setup incorporating the ability to sample light spectroscopy.Lieutenant, United States NavyApproved for public release. Distribution is unlimited

Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials

Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors

Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily doped n-type, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductors devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to three orders of magnitude, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN and ZnS structures. The predicted effect can be exploited to develop bright light emitting devices, especially electrically driven non-classical light sources based on color centers in SiC, AlN, ZnO and other wide-bandgap semiconductors.Comment: 6 figure