Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

An Electromigration and Thermal Model of Power Wires for a Priori High-Level Reliability Prediction

In this paper, a simple power-distribution electrothermal model including the interconnect self-heating is used together with a statistical model of average and rms currents of functional blocks and a high-level model of fanout distribution and interconnect wirelength. Following the 2001 SIA roadmap projections, we are able to predict a priori that the minimum width that satisfies the electromigration constraints does not scale like the minimum metal pitch in future technology nodes. As a consequence, the percentage of chip area covered by power lines is expected to increase at the expense of wiring resources unless proper countermeasures are taken. Some possible solutions are proposed in the paper

Multi-port Memory Design for Advanced Computer Architectures

In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters. Multi-porting is essential for caches and shared-data systems, especially multi-core System-on-chips (SOC). It can significantly increase the memory access throughput. We evaluate FinFET voltage-mode multi-port SRAM cells using different metrics including leakage current, static noise margin and read/write performance. Simulation results show that single-ended multi-port FinFET SRAMs with isolated read ports offer improved read stability and flexibility over classical double-ended structures at the expense of write performance. By increasing the size of the access transistors, we show that the single-ended multi-port structures can achieve equivalent write performance to the classical double-ended multi-port structure for 9% area overhead. Moreover, compared with CMOS SRAM, FinFET SRAM has better stability and standby power. We also describe new methods for the design of FinFET current-mode multi-port SRAM cells. Current-mode SRAMs avoid the full-swing of the bitline, reducing dynamic power and access time. However, that comes at the cost of voltage drop, which compromises stability. The design proposed in this thesis utilizes the feature of Independent Gate (IG) mode FinFET, which can leverage threshold voltage by controlling the back gate voltage, to merge two transistors into one through high-Vt and low-Vt transistors. This design not only reduces the voltage drop, but it also reduces the area in multi-port current-mode SRAM design. For off-chip memory, we propose a novel two-port 1-read, 1-write (1R1W) phasechange memory (PCM) cell, which significantly reduces the probability of blocking at the bank levels. Different from the traditional PCM cell, the access transistors are at the top and connected to the bitline. We use Verilog-A to model the behavior of Ge2Sb2Te5 (GST: the storage component). We evaluate the performance of the two-port cell by transistor sizing and voltage pumping. Simulation results show that pMOS transistor is more practical than nMOS transistor as the access device when both area and power are considered. The estimated area overhead is 1.7�, compared to single-port PCM cell. In brief, the contribution we make in this thesis is that we propose and evaluate three different kinds of multi-port memories that are favorable for advanced computer architectures

Barrel Shifter Physical Unclonable Function Based Encryption

Physical Unclonable Functions (PUFs) are circuits designed to extract physical randomness from the underlying circuit. This randomness depends on the manufacturing process. It differs for each device enabling chip-level authentication and key generation applications. We present a protocol utilizing a PUF for secure data transmission. Parties each have a PUF used for encryption and decryption; this is facilitated by constraining the PUF to be commutative. This framework is evaluated with a primitive permutation network - a barrel shifter. Physical randomness is derived from the delay of different shift paths. Barrel shifter (BS) PUF captures the delay of different shift paths. This delay is entangled with message bits before they are sent across an insecure channel. BS-PUF is implemented using transmission gates; their characteristics ensure same-chip reproducibility, a necessary property of PUFs. Post-layout simulations of a common centroid layout 8-level barrel shifter in 0.13 {\mu}m technology assess uniqueness, stability and randomness properties. BS-PUFs pass all selected NIST statistical randomness tests. Stability similar to Ring Oscillator (RO) PUFs under environment variation is shown. Logistic regression of 100,000 plaintext-ciphertext pairs (PCPs) failed to successfully model BS- PUF behavior

Optimizing CMOS circuits for low power using transistor reordering

This paper addresses the optimization of a circuit for low power using transistor reordering. The optimization algorithm relies on a stochastic model of a static CMOS gate that includes the power internal nodes of the gate. This power consumption depends on the switching activity and the equilibrium probabilities of the inputs of the gate. The model allows an exploration of the different configurations of a gate that are obtained by recording its transistors. Thus, the best configuration of each gate is selected and the overall power consumption of the circuit is reduced.Peer ReviewedPostprint (published version