11,507 research outputs found
Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure
Using pulsed laser ablation with arsenic over pressure, the growth conditions
for GaAs nanowires have been systematically investigated and optimized. Arsenic
over pressure with As molecules was introduced to the system by thermal
decomposition of polycrystalline GaAs to control the stoichiometry and shape of
the nanowires during growth. GaAs nanowires exhibit a variety of geometries
under varying arsenic over pressure, which can be understood by different
growth processes via vapor-liquid-solid mechanism. Single-crystal GaAs
nanowires with uniform diameter, lengths over 20 m, and thin surface oxide
layer were obtained and can potentially be used for further electronic
characterization
Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain
Electronic structures of wurtzite GaAs nanowires in the [0001] direction were
studied using first-principles calculations. It was found that the band gap of
GaAs nanowires experience a direct-to-indirect transition when the diameter of
the nanowires is smaller than ~28 {\AA}. For those thin GaAs nanowires with an
indirect band gap, it was found that the gap can be tuned to be direct if a
moderate external uniaxial strain is applied. Both tensile and compressive
strain can trigger the indirect-to-direct gap transition. The critical strains
for the gap-transition are determined by the energy crossover of two states in
conduction bands.Comment: 4 pages, 4 figure
Real structure of lattice matched GaAs-Fe3Si core-shell nanowires
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by
molecular-beam epitaxy on oxidized Si(111) substrates and characterized by
transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets
were formed on the oxide surface, and the semiconducting GaAs nanowires grew
epitaxially via the vapor-liquid-solid mechanism as single-crystals from holes
in the oxide film. We observed two stages of growth of the GaAs nanowires,
first the regular growth and second the residual growth after the Ga supply was
finished. The magnetic Fe3Si shells were deposited in an As-free chamber. They
completely cover the GaAs cores although they consist of small grains.
High-resolution TEM micrographs depict the differently oriented grains in the
Fe3Si shells. Selected area diffraction of electrons and XRD gave further
evidence that the shells are textured and not single crystals. Facetting of the
shells was observed, which lead to thickness inhomogeneities of the shells.Comment: 15 pages, 8 figure
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
A novel method for the direct correlation at the nanoscale of structural and
optical properties of single GaAs nanowires is reported. Nanowires consisting
of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are
investigated by photoluminescence spectroscopy and transmission electron
microscopy. The photoluminescence of wurtzite GaAs is consistent with a band
gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that
are predominantly composed of either zinc-blende or wurtzite phase show
photoluminescence emission close to the bulk GaAs band gap, while regions
composed of a nonperiodic superlattice of wurtzite and zinc-blende phases
exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The
dimensions of the quantum heterostructures are correlated with the light
emission, allowing us to determine the band alignment between these two
crystalline phases. Our first-principles electronic structure calculations
within density functional theory, employing a hybrid-exchange functional,
predict band offsets and effective masses in good agreement with experimental
results
Towards low-dimensional hole systems in Be-doped GaAs nanowires
GaAs was central to the development of quantum devices but is rarely used for
nanowire-based quantum devices with InAs, InSb and SiGe instead taking the
leading role. p-type GaAs nanowires offer a path to studying strongly-confined
0D and 1D hole systems with strong spin-orbit effects, motivating our
development of nanowire transistors featuring Be-doped p-type GaAs nanowires,
AuBe alloy contacts and patterned local gate electrodes towards making
nanowire-based quantum hole devices. We report on nanowire transistors with
traditional substrate back-gates and EBL-defined metal/oxide top-gates produced
using GaAs nanowires with three different Be-doping densities and various AuBe
contact processing recipes. We show that contact annealing only brings small
improvements for the moderately-doped devices under conditions of lower anneal
temperature and short anneal time. We only obtain good transistor performance
for moderate doping, with conduction freezing out at low temperature for
lowly-doped nanowires and inability to reach a clear off-state under gating for
the highly-doped nanowires. Our best devices give on-state conductivity 95 nS,
off-state conductivity 2 pS, on-off ratio ~, and sub-threshold slope 50
mV/dec at T = 4 K. Lastly, we made a device featuring a moderately-doped
nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a
plateau in the sub-threshold region that is reproducible in separate cool-downs
and indicative of possible conductance quantization highlighting the potential
for future quantum device studies in this material system
p-GaAs nanowire MESFETs with near-thermal limit gating
Difficulties in obtaining high-performance p-type transistors and gate
insulator charge-trapping effects present two major challenges for III-V
complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs
nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates
the need for a gate insulator by exploiting the Schottky barrier at the
metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire
metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical
sub-threshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio
, on-resistance ~700 k, contact resistance ~30 k,
peak transconductance 1.2 S/m and high-fidelity ac operation at
frequencies up to 10 kHz. The device consists of a GaAs nanowire with an
undoped core and heavily Be-doped shell. We carefully etch back the nanowire at
the gate locations to obtain Schottky-barrier insulated gates whilst leaving
the doped shell intact at the contacts to obtain low contact resistance. Our
device opens a path to all-GaAs nanowire MESFET complementary circuits with
simplified fabrication and improved performance
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