Analog Circuits in Ultra-Deep-Submicron CMOS

Modern and future ultra-deep-submicron (UDSM) technologies introduce several new problems in analog design. Nonlinear output conductance in combination with reduced voltage gain pose limits in linearity of (feedback) circuits. Gate-leakage mismatch exceeds conventional matching tolerances. Increasing area does not improve matching any more, except if higher power consumption is accepted or if active cancellation techniques are used. Another issue is the drop in supply voltages. Operating critical parts at higher supply voltages by exploiting combinations of thin- and thick-oxide transistors can solve this problem. Composite transistors are presented to solve this problem in a practical way. Practical rules of thumb based on measurements are derived for the above phenomena

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

A fully integrated 24-GHz phased-array transmitter in CMOS

This paper presents the first fully integrated 24-GHz phased-array transmitter designed using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS power amplifiers, with outputs matched to 50 /spl Omega/, that are each capable of generating up to 14.5 dBm of output power at 24 GHz. The heterodyne transmitter has a two-step quadrature up-conversion architecture with local oscillator (LO) frequencies of 4.8 and 19.2 GHz, which are generated by an on-chip frequency synthesizer. Four-bit LO path phase shifting is implemented in each element at 19.2 GHz, and the transmitter achieves a peak-to-null ratio of 23 dB with raw beam-steering resolution of 7/spl deg/ for radiation normal to the array. The transmitter can support data rates of 500 Mb/s on each channel (with BPSK modulation) and occupies 6.8 mm /spl times/ 2.1 mm of die area

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

Extending systems-on-chip to the third dimension : performance, cost and technological tradeoffs.

Because of the today's market demand for high-performance, high-density portable hand-held applications, electronic system design technology has shifted the focus from 2-D planar SoC single-chip solutions to different alternative options as tiled silicon and single-level embedded modules as well as 3-D integration. Among the various choices, finding an optimal solution for system implementation dealt usually with cost, performance and other technological trade-off analysis at the system conceptual level. It has been identified that the decisions made within the first 20% of the total design cycle time will ultimately result up to 80% of the final product cost. In this paper, we discuss appropriate and realistic metric for performance and cost trade-off analysis both at system conceptual level (up-front in the design phase) and at implementation phase for verification in the three-dimensional integration. In order to validate the methodology, two ubiquitous electronic systems are analyzed under various implementation schemes and discuss the pros and cons of each of them

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends

A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%

A VHDL-AMS Simulation Environment for an UWB Impulse Radio Transceiver

Ultra-Wide-Band (UWB) communication based on the impulse radio paradigm is becoming increasingly popular. According to the IEEE 802.15 WPAN Low Rate Alternative PHY Task Group 4a, UWB will play a major role in localization applications, due to the high time resolution of UWB signals which allow accurate indirect measurements of distance between transceivers. Key for the successful implementation of UWB transceivers is the level of integration that will be reached, for which a simulation environment that helps take appropriate design decisions is crucial. Owing to this motivation, in this paper we propose a multiresolution UWB simulation environment based on the VHDL-AMS hardware description language, along with a proper methodology which helps tackle the complexity of designing a mixed-signal UWB System-on-Chip. We applied the methodology and used the simulation environment for the specification and design of an UWB transceiver based on the energy detection principle. As a by-product, simulation results show the effectiveness of UWB in the so-called ranging application, that is the accurate evaluation of the distance between a couple of transceivers using the two-way-ranging metho