High isolation RF signal selection switches

A selection switch with high isolation between RF signal input terminals is achieved with a gated Schmitt trigger circuit feeding into a control NAND gate in each signal switching channel. The control NAND gates of the separate signal channels are coupled to an output terminal by a single NAND gate. The schmitt trigger circuits and all gates are implemented with Schottky transistor-transistor logic circuits having input clamping diodes. Each Schmitt trigger circuit includes two cascaded NAND gates and a feedback isolation Schottky diode between one input terminal connected to receive an RF input and another input terminal connected to receive a feedback signal from the second of the two cascaded NAND gates. Both NAND gates of the Schmitt trigger circuits are enabled by the same switch control signal which enables the control gates

Space station power semiconductor package

A package of high-power switching semiconductors for the space station have been designed and fabricated. The package includes a high-voltage (600 volts) high current (50 amps) NPN Fast Switching Power Transistor and a high-voltage (1200 volts), high-current (50 amps) Fast Recovery Diode. The package features an isolated collector for the transistors and an isolated anode for the diode. Beryllia is used as the isolation material resulting in a thermal resistance for both devices of .2 degrees per watt. Additional features include a hermetical seal for long life -- greater than 10 years in a space environment. Also, the package design resulted in a low electrical energy loss with the reduction of eddy currents, stray inductances, circuit inductance, and capacitance. The required package design and device parameters have been achieved. Test results for the transistor and diode utilizing the space station package is given

Pulse Amplitude and Width Detector-Patent

Electrical testing apparatus for detecting amplitude and width of transient puls

Solid state television camera system Patent

Solid state television camera system consisting of monolithic semiconductor mosaic sensor and molecular digital readout system

Photon-coupled isolation switch Quarterly report, 1 Oct. - 31 Dec. 1966

Integrated circuit photon coupled isolation switc

A low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transitors Final engineering report

Low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transistor

Component modeling handbook

Handbook on nonlinear mathematical models for electronic component

Development of a thin-film space-charge- limited triode Final report, Mar. 1965 - Jun. 1966

Development of thin film space charge limited triod

A dc-coupled noninverting one-shot Patent

Transistorized dc-coupled multivibrator with noninverted output signa

Development of an image converter of radical design

A long term investigation of thin film sensors, monolithic photo-field effect transistors, and epitaxially diffused phototransistors and photodiodes to meet requirements to produce acceptable all solid state, electronically scanned imaging system, led to the production of an advanced engineering model camera which employs a 200,000 element phototransistor array (organized in a matrix of 400 rows by 500 columns) to secure resolution comparable to commercial television. The full investigation is described for the period July 1962 through July 1972, and covers the following broad topics in detail: (1) sensor monoliths; (2) fabrication technology; (3) functional theory; (4) system methodology; and (5) deployment profile. A summary of the work and conclusions are given, along with extensive schematic diagrams of the final solid state imaging system product