Strain-Engineered MOSFETs

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization

Silicon Nanodevices

This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students

Reports to the President

A compilation of annual reports for the 1989-1990 academic year, including a report from the President of the Massachusetts Institute of Technology, as well as reports from the academic and administrative units of the Institute. The reports outline the year's goals, accomplishments, honors and awards, and future plans

GSI Scientific Report 2009 [GSI Report 2010-1]

Displacement design response spectrum is an essential component for the currently-developing displacement-based seismic design and assessment procedures. This paper proposes a new and simple method for constructing displacement design response spectra on soft soil sites. The method takes into account modifications of the seismic waves by the soil layers, giving due considerations to factors such as the level of bedrock shaking, material non-linearity, seismic impedance contrast at the interface between soil and bedrock, and plasticity of the soil layers. The model is particularly suited to applications in regions with a paucity of recorded strong ground motion data, from which empirical models cannot be reliably developed