12 research outputs found

    Efficient incremental analysis of on-chip power grid via sparse approximation

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    SoC Test Architecture Design and Optimization Considering Power Supply Noise Effects

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    Fast flip-chip power grid analysis via locality and grid shells

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    Parallel Simulation for VLSI Power Grid

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    Due to the increasing complexity of VLSI circuits, power grid simulation has become more and more time-consuming. Hence, there is a need for fast and accurate power grid simulator. In order to perform power grid simulation in a timely manner, parallel algorithms have been developed to accelerate the simulation. In this dissertation, we present parallel algorithms and software for power grid simulation on CPU-GPU platforms. The power grid is divided into disjoint partitions. The partitions are enlarged using Breath First Search (BFS) method. In the partition enlarging process, a portion of edges are ignored to make the matrix factorization light-weight. Solving the enlarged partitions using a direct solver serves as a preconditioner for the Preconditioned Conjugate Gradient (PCG) method that is used to solve the power grid. This work combines the advantages of direct solvers and iterative solvers to obtain an efficient hybrid parallel solver. Two-tier parallelism is harnessed using MPI for partitions and CUDA within each partition. The experiments conducted on supercomputing clusters demonstrate significant speed improvements over a state-of-the-art direct solver in both static and transient analysis

    Clock routing for high performance microprocessor designs.

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    Tian, Haitong.Chinese abstract is on unnumbered page.Thesis (M.Phil.)--Chinese University of Hong Kong, 2011.Includes bibliographical references (p. 65-74).Abstracts in English and Chinese.Abstract --- p.iAcknowledgement --- p.iiiChapter 1 --- Introduction --- p.1Chapter 1.1 --- Motivations --- p.1Chapter 1.2 --- Our Contributions --- p.2Chapter 1.3 --- Organization of the Thesis --- p.3Chapter 2 --- Background Study --- p.4Chapter 2.1 --- Traditional Clock Routing Problem --- p.4Chapter 2.2 --- Tree-Based Clock Routing Algorithms --- p.5Chapter 2.2.1 --- Clock Routing Using H-tree --- p.5Chapter 2.2.2 --- Method of Means and Medians(MMM) --- p.6Chapter 2.2.3 --- Geometric Matching Algorithm (GMA) --- p.8Chapter 2.2.4 --- Exact Zero-Skew Algorithm --- p.9Chapter 2.2.5 --- Deferred Merge Embedding (DME) --- p.10Chapter 2.2.6 --- Boundary Merging and Embedding (BME) Algorithm --- p.14Chapter 2.2.7 --- Planar Clock Routing Algorithm --- p.17Chapter 2.2.8 --- Useful-skew Tree Algorithm --- p.18Chapter 2.3 --- Non-Tree Clock Distribution Networks --- p.19Chapter 2.3.1 --- Grid (Mesh) Structure --- p.20Chapter 2.3.2 --- Spine Structure --- p.20Chapter 2.3.3 --- Hybrid Structure --- p.21Chapter 2.4 --- Post-grid Clock Routing Problem --- p.22Chapter 2.5 --- Limitations of the Previous Work --- p.24Chapter 3 --- Post-Grid Clock Routing Problem --- p.26Chapter 3.1 --- Introduction --- p.26Chapter 3.2 --- Problem Definition --- p.27Chapter 3.3 --- Our Approach --- p.30Chapter 3.3.1 --- Delay-driven Path Expansion Algorithm --- p.31Chapter 3.3.2 --- Pre-processing to Connect Critical ports --- p.34Chapter 3.3.3 --- Post-processing to Reduce Capacitance --- p.36Chapter 3.4 --- Experimental Results --- p.39Chapter 3.4.1 --- Experiment Setup --- p.39Chapter 3.4.2 --- Validations of the Delay and Slew Estimation --- p.39Chapter 3.4.3 --- Comparisons with the Tree Grow (TG) Approach --- p.41Chapter 3.4.4 --- Lowest Achievable Delays --- p.42Chapter 3.4.5 --- Simulation Results --- p.42Chapter 4 --- Non-tree Based Post-Grid Clock Routing Problem --- p.44Chapter 4.1 --- Introduction --- p.44Chapter 4.2 --- Handling Ports with Large Load Capacitances --- p.46Chapter 4.2.1 --- Problem Ports Identification --- p.47Chapter 4.2.2 --- Non-Tree Construction --- p.47Chapter 4.2.3 --- Wire Link Selection --- p.48Chapter 4.3 --- Path Expansion in Non-tree Algorithm --- p.51Chapter 4.4 --- Limitations of the Non-tree Algorithm --- p.51Chapter 4.5 --- Experimental Results --- p.51Chapter 4.5.1 --- Experiment Setup --- p.51Chapter 4.5.2 --- Validations of the Delay and Slew Estimation --- p.52Chapter 4.5.3 --- Lowest Achievable Delays --- p.53Chapter 4.5.4 --- Results on New Benchmarks --- p.53Chapter 4.5.5 --- Simulation Results --- p.55Chapter 5 --- Efficient Partitioning-based Extension --- p.57Chapter 5.1 --- Introduction --- p.57Chapter 5.2 --- Partition-based Extension --- p.58Chapter 5.3 --- Experimental Results --- p.61Chapter 5.3.1 --- Experiment Setup --- p.61Chapter 5.3.2 --- Running Time Improvement with Partitioning Technique --- p.61Chapter 6 --- Conclusion --- p.63Bibliography --- p.6

    Scalable Analysis, Verification and Design of IC Power Delivery

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    Due to recent aggressive process scaling into the nanometer regime, power delivery network design faces many challenges that set more stringent and specific requirements to the EDA tools. For example, from the perspective of analysis, simulation efficiency for large grids must be improved and the entire network with off-chip models and nonlinear devices should be able to be analyzed. Gated power delivery networks have multiple on/off operating conditions that need to be fully verified against the design requirements. Good power delivery network designs not only have to save the wiring resources for signal routing, but also need to have the optimal parameters assigned to various system components such as decaps, voltage regulators and converters. This dissertation presents new methodologies to address these challenging problems. At first, a novel parallel partitioning-based approach which provides a flexible network partitioning scheme using locality is proposed for power grid static analysis. In addition, a fast CPU-GPU combined analysis engine that adopts a boundary-relaxation method to encompass several simulation strategies is developed to simulate power delivery networks with off-chip models and active circuits. These two proposed analysis approaches can achieve scalable simulation runtime. Then, for gated power delivery networks, the challenge brought by the large verification space is addressed by developing a strategy that efficiently identifies a number of candidates for the worst-case operating condition. The computation complexity is reduced from O(2^N) to O(N). At last, motivated by a proposed two-level hierarchical optimization, this dissertation presents a novel locality-driven partitioning scheme to facilitate divide-and-conquer-based scalable wire sizing for large power delivery networks. Simultaneous sizing of multiple partitions is allowed which leads to substantial runtime improvement. Moreover, the electric interactions between active regulators/converters and passive networks and their influences on key system design specifications are analyzed comprehensively. With the derived design insights, the system-level co-design of a complete power delivery network is facilitated by an automatic optimization flow. Results show significant performance enhancement brought by the co-design

    Microstructural and mechanical characteristics of micro-scale intermetallic compounds interconnections

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    Following the continually increasing demand for high-density interconnection and multilayer packaging for chips, solder bump size has decreased significantly over the years, this has led to some challenges in the reliability of interconnects. This thesis presents research into the resulting effects of miniaturization on the interconnection with Sn-solder, especially focusing on the full intermetallics (IMCs) micro-joints which appear in the 3D IC stacking packaging. Thereby, systematic studies have been conducted to study the microstructural evolution and reliability issues of Cu-Sn and Cu-Sn-Ni IMCs micro-joints. (1) Phenomenon of IMCs planar growth: The planar IMCs interlayer was asymmetric and composed of (Cu,Ni)6Sn5 mainly in Ni/Sn (2.5~5 µm)/Cu interconnect. Meanwhile, it was symmetric two-layer structure in Cu/Sn (2.5~5 µm)/Cu interconnect with the Cu3Sn fine grains underneath Cu6Sn5 cobblestone-shape-like grains for each IMCs layer. Besides, it is worth noticing that the appearance of Cu-rich whiskers (the mixture of Cu/Cu2O/SnOx/Cu6Sn5) could potentially lead to short-circuit in the cases of ultra-fine (<10 µm pitch) interconnects for the miniaturization of electronics devices. (2) Microstructural evolution process of Cu-Sn IMCs micro-joint: The simultaneous solidification of IMCs interlayer supressed the scalloped growth of Cu6Sn5 grains in Cu/Sn (2.5 µm)/Cu interconnect during the transient liquid phase (TLP) soldering process. The growth factor of Cu3Sn was in the range of 0.29~0.48 in Cu-Cu6Sn5 diffusion couple at 240~290 °C, which was impacted significantly by the type of substrates. And the subsequent homogenization process of Cu3Sn grains was found to be consistent with the description of flux-driven ripening (FDR) theory. Moreover, Kirkendall voids appeared only in the Cu3Sn layer adjacent to Cu-plated substrate, and this porous Cu3Sn micro-joint was mechanically robust during the shear test. (3) Microstructural evolution of Cu-Sn-Ni IMCs micro-joint: There was obvious inter-reaction between the interfacial reactions in Ni/Sn (1.5 µm)/Cu interconnect. The growth factor of (Cu,Ni)3Sn on Cu side was about 0.36 at 240 °C, and the reaction product on Ni side was changed from Ni3Sn4 into (Cu,Ni)6Sn5 with the increase of soldering temperature. In particular, the segregation of Ni atoms occurred along with phase transformation at 290 °C and thereby stabilized the (Cu,Ni)6Sn5 phase for the high Ni content of 20 at.%. (4) Micro-mechanical characteristics of Cu-Sn-Ni IMCs micro-joint: The Young s modulus and hardness of Cu-Sn-Ni IMCs were measured by nanoindentation test, such as 160.6±3.1 GPa/ 7.34±0.14 GPa for (Cu,Ni)6Sn5 and 183.7±4.0 GPa/ 7.38±0.46 GPa for (Cu,Ni)3Sn, respectively. Besides, in-situ nano-compression tests have been conducted on IMCs micro-cantilevers, the fracture strength turns out to be 2.46 GPa. And also, the ultimate tensile stress was calculated to be 2.3±0.7 GPa from in-situ micro-bending tests, which is not sensitive with the microstructural change of IMCs after dwelling at 290 °C
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