Thermal Management in Fine-Grained 3-D Integrated Circuits

For beyond 2-D CMOS logic, various 3-D integration approaches specially transistor based 3-D integrations such as monolithic 3-D [1], Skybridge [2], SN3D [3] holds most promise. However, such 3D architectures within small form factor increase hotspots and demand careful consideration of thermal management at all levels of integration [4] as stacked transistors are detached from the substrate (i.e., heat sink). Traditional system level approaches such as liquid cooling [5], heat spreader [6], etc. are inadequate for transistor level 3-D integration and have huge cost overhead [7]. In this paper, we investigate the thermal profile for transistor level 3-D integration approaches through finite element based modeling. Additionally, we propose generic physical level heat management features for such transistor level 3-D integration and show their application through detailed thermal modeling and simulations. These features include a thermal junction and heat conducting nano pillar. The heat junction is a specialized junction to extract heat from a selected region in 3-D; it allows heat conduction without interference with the electrical activities of the circuit. In conjunction with the junction, our proposed thermal pillars enable heat dissipation through the substrate; these pillars are analogous to TSVs/Vias, but carry only heat. Such structures are generic and is applicable to any transistor level 3-D integration approaches. We perform 3-D finite element based analysis to capture both static and transient thermal behaviors of 3-D circuits, and show the effectiveness of heat management features. Our simulation results show that without any heat extraction feature, temperature for 3-D integrated circuits increased by almost 100K-200K. However, proposed heat extraction feature is very effective in heat management, reducing temperature from heated area by up to 53%.Comment: 9 Page

Quantifying the relationship between the power delivery network and architectural policies in a 3D-stacked memory device

pre-printMany of the pins on a modern chip are used for power delivery. If fewer pins were used to supply the same current, the wires and pins used for power delivery would have to carry larger currents over longer distances. This results in an "IR-drop" problem, where some of the voltage is dropped across the long resistive wires making up the power delivery network, and the eventual circuits experience fluctuations in their supplied voltage. The same problem also manifests if the pin count is the same, but the current draw is higher. IR-drop can be especially problematic in 3D DRAM devices because (i) low cost (few pins and TSVs) is a high priority, (ii) 3D-stacking increases current draw within the package without providing proportionate room for more pins, and (iii) TSVs add to the resistance of the power delivery net-work. This paper is the first to characterize the relationship be- tween the power delivery network and the maximum sup ported activity in a 3D-stacked DRAM memory device. The design of the power delivery network determines if some banks can handle less activity than others. It also deter-mines the combinations of bank activities that are permissible. Both of these attributes can feed into architectural policies. For example, if some banks can handle more activities than others, the architecture benefits by placing data from high-priority threads or data from frequently accessed pages into those banks. The memory controller can also derive higher performance if it schedules requests to specific combinations of banks that do not violate the IR-drop constraint

Design Guidelines for High-Performance SCM Hierarchies

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature of memory-resident services makes seamless integration of SCM in servers questionable. In this paper, we ask the question of how best to introduce SCM for such servers to improve overall performance/cost over existing DRAM-only architectures. We first show that even with the most optimistic latency projections for SCM, the higher memory access latency results in prohibitive performance degradation. However, we find that deployment of a modestly sized high-bandwidth 3D stacked DRAM cache makes the performance of an SCM-mostly memory system competitive. The high degree of spatial locality that memory-resident services exhibit not only simplifies the DRAM cache's design as page-based, but also enables the amortization of increased SCM access latencies and the mitigation of SCM's read/write latency disparity. We identify the set of memory hierarchy design parameters that plays a key role in the performance and cost of a memory system combining an SCM technology and a 3D stacked DRAM cache. We then introduce a methodology to drive provisioning for each of these design parameters under a target performance/cost goal. Finally, we use our methodology to derive concrete results for specific SCM technologies. With PCM as a case study, we show that a two bits/cell technology hits the performance/cost sweet spot, reducing the memory subsystem cost by 40% while keeping performance within 3% of the best performing DRAM-only system, whereas single-level and triple-level cell organizations are impractical for use as memory replacements.Comment: Published at MEMSYS'1

성능과 용량 향상을 위한 적층형 메모리 구조

학위논문 (박사)-- 서울대학교 대학원 : 융합과학기술대학원 융합과학부(지능형융합시스템전공), 2019. 2. 안정호.The advance of DRAM manufacturing technology slows down, whereas the density and performance needs of DRAM continue to increase. This desire has motivated the industry to explore emerging Non-Volatile Memory (e.g., 3D XPoint) and the high-density DRAM (e.g., Managed DRAM Solution). Since such memory technologies increase the density at the cost of longer latency, lower bandwidth, or both, it is essential to use them with fast memory (e.g., conventional DRAM) to which hot pages are transferred at runtime. Nonetheless, we observe that page transfers to fast memory often block memory channels from servicing memory requests from applications for a long period. This in turn significantly increases the high-percentile response time of latency-sensitive applications. In this thesis, we propose a high-density managed DRAM architecture, dubbed 3D-XPath for applications demanding both low latency and high capacity for memory. 3D-XPath DRAM stacks conventional DRAM dies with high-density DRAM dies explored in this thesis and connects these DRAM dies with 3D-XPath. Especially, 3D-XPath allows unused memory channels to service memory requests from applications when primary channels supposed to handle the memory requests are blocked by page transfers at given moments, considerably increasing the high-percentile response time. This can also improve the throughput of applications frequently copying memory blocks between kernel and user memory spaces. Our evaluation shows that 3D-XPath DRAM decreases high-percentile response time of latency-sensitive applications by ∼30% while improving the throughput of an I/O-intensive applications by ∼39%, compared with DRAM without 3D-XPath. Recent computer systems are evolving toward the integration of more CPU cores into a single socket, which require higher memory bandwidth and capacity. Increasing the number of channels per socket is a common solution to the bandwidth demand and to better utilize these increased channels, data bus width is reduced and burst length is increased. However, this longer burst length brings increased DRAM access latency. On the memory capacity side, process scaling has been the answer for decades, but cell capacitance now limits how small a cell could be. 3D stacked memory solves this problem by stacking dies on top of other dies. We made a key observation in real multicore machine that multiple memory controllers are always not fully utilized on SPEC CPU 2006 rate benchmark. To bring these idle channels into play, we proposed memory channel sharing architecture to boost peak bandwidth of one memory channel and reduce the burst latency on 3D stacked memory. By channel sharing, the total performance on multi-programmed workloads and multi-threaded workloads improved up to respectively 4.3% and 3.6% and the average read latency reduced up to 8.22% and 10.18%.DRAM 제조 기술의 발전은 속도가 느려지는 반면 DRAM의 밀도 및 성능 요구는 계속 증가하고 있다. 이러한 요구로 인해 새로운 비 휘발성 메모리(예: 3D-XPoint) 및 고밀도 DRAM(예: Managed asymmetric latency DRAM Solution)이 등장하였다. 이러한 고밀도 메모리 기술은 긴 레이턴시, 낮은 대역폭 또는 두 가지 모두를 사용하는 방식으로 밀도를 증가시키기 때문에 성능이 좋지 않아, 핫 페이지를 고속 메모리(예: 일반 DRAM)로 스왑되는 저용량의 고속 메모리가 동시에 사용되는 것이 일반적이다. 이러한 스왑 과정에서 빠른 메모리로의 페이지 전송이 일반적인 응용프로그램의 메모리 요청을 오랫동안 처리하지 못하도록 하기 때문에, 대기 시간에 민감한 응용 프로그램의 백분위 응답 시간을 크게 증가시켜, 응답 시간의 표준 편차를 증가시킨다. 이러한 문제를 해결하기 위해 본 학위 논문에서는 저 지연시간 및 고용량 메모리를 요구하는 애플리케이션을 위해 3D-XPath, 즉 고밀도 관리 DRAM 아키텍처를 제안한다. 이러한 3D-톔소를 집적한 DRAM은 저속의 고밀도 DRAM 다이를 기존의 일반적인 DRAM 다이와 동시에 한 칩에 적층하고, DRAM 다이끼리는 제안하는 3D-XPath 하드웨어를 통해 연결된다. 이러한 3D-XPath는 핫 페이지 스왑이 일어나는 동안 응용프로그램의 메모리 요청을 차단하지 않고 사용량이 적은 메모리 채널로 핫 페이지 스왑을 처리 할 수 있도록 하여, 데이터 집중 응용 프로그램의 백분위 응답 시간을 개선시킨다. 또한 제안하는 하드웨어 구조를 사용하여, 추가적으로 O/S 커널과 유저 스페이스 간의 메모리 블록을 자주 복사하는 응용 프로그램의 처리량을 향상시킬 수 있다. 이러한 3D-XPath DRAM은 3D-XPath가 없는 DRAM에 비해 I/O 집약적인 응용프로그램의 처리량을 최대 39 % 향상시키면서 레이턴시에 민감한 응용 프로그램의 높은 백분위 응답 시간을 최대 30 %까지 감소시킬 수 있다. 또한 최근의 컴퓨터 시스템은 보다 많은 메모리 대역폭과 용량을 필요로하는 더 많은 CPU 코어를 단일 소켓으로 통합하는 방향으로 진화하고 있다. 이러한 소켓 당 채널 수를 늘리는 것은 대역폭 요구에 대한 일반적인 해결책이며, 최신의 DRAM 인터페이스의 발전 양상은 증가한 채널을 보다 잘 활용하기 위해 데이터 버스 폭이 감소되고 버스트 길이가 증가한다. 그러나 길어진 버스트 길이는 DRAM 액세스 대기 시간을 증가시킨다. 추가적으로 최신의 응용프로그램은 더 많은 메모리 용량을 요구하며, 미세 공정으로 메모리 용량을 증가시키는 방법론은 수십 년 동안 사용되었지만, 20 nm 이하의 미세공정에서는 더 이상 공정 미세화를 통해 메모리 밀도를 증가시키기가 어려운 상황이며, 적층형 메모리를 사용하여 용량을 증가시키는 방법을 사용한다. 이러한 상황에서, 실제 최신의 멀티코어 머신에서 SPEC CPU 2006 응용프로그램을 멀티코어에서 실행하였을 때, 항상 시스템의 모든 메모리 컨트롤러가 완전히 활용되지 않는다는 사실을 관찰했다. 이러한 유휴 채널을 사용하기 위해 하나의 메모리 채널의 피크 대역폭을 높이고 3D 스택 메모리의 버스트 대기 시간을 줄이기 위해 본 학위 논문에서는 메모리 채널 공유 아키텍처를 제안하였으며, 하드웨어 블록을 제안하였다. 이러한 채널 공유를 통해 멀티 프로그램 된 응용프로그램 및 다중 스레드 응용프로그램 성능이 각각 4.3 % 및 3.6 %로 향상되었으며 평균 읽기 대기 시간은 8.22 % 및 10.18 %로 감소하였다.Contents Abstract i Contents iv List of Figures vi List of Tables viii Introduction 1 1.1 3D-XPath: High-Density Managed DRAM Architecture with Cost-effective Alternative Paths for Memory Transactions 5 1.2 Boosting Bandwidth – Dynamic Channel Sharing on 3D Stacked Memory 9 1.3 Research contribution 13 1.4 Outline 14 3D-stacked Heterogeneous Memory Architecture with Cost-effective Extra Block Transfer Paths 17 2.1 Background 17 2.1.1 Heterogeneous Main Memory Systems 17 2.1.2 Specialized DRAM 19 2.1.3 3D-stacked Memory 22 2.2 HIGH-DENSITY DRAM ARCHITECTURE 27 2.2.1 Key Design Challenges 29 2.2.2 Plausible High-density DRAM Designs 33 2.3 3D-STACKED DRAM WITH ALTERNATIVE PATHS FOR MEMORY TRANSACTIONS 37 2.3.1 3D-XPath Architecture 41 2.3.2 3D-XPath Management 46 2.4 EXPERIMENTAL METHODOLOGY 52 2.5 EVALUATION 56 2.5.1 OLDI Workloads 56 2.5.2 Non-OLDI Workloads 61 2.5.3 Sensitivity Analysis 66 2.6 RELATED WORK 70 Boosting bandwidth –Dynamic Channel Sharing on 3D Stacked Memory 72 3.1 Background: Memory Operations 72 3.1.1. Memory Controller 72 3.1.2 DRAM column access sequence 73 3.2 Related Work 74 3.3. CHANNEL SHARING ENABLED MEMORY SYSTEM 76 3.3.1 Hardware Requirements 78 3.3.2 Operation Sequence 81 3.4 Analysis 87 3.4.1 Experiment Environment 87 3.4.2 Performance 88 3.4.3 Overhead 90 CONCLUSION 92 REFERENCES 94 국문초록 107Docto

Challenges and solutions for large-scale integration of emerging technologies

Title from PDF of title page viewed June 15, 2021Dissertation advisor: Mostafizur RahmanVitaIncludes bibliographical references (pages 67-88)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2021The semiconductor revolution so far has been primarily driven by the ability to shrink devices and interconnects proportionally (Moore's law) while achieving incremental benefits. In sub-10nm nodes, device scaling reaches its fundamental limits, and the interconnect bottleneck is dominating power and performance. As the traditional way of CMOS scaling comes to an end, it is essential to find an alternative to continue this progress. However, an alternative technology for general-purpose computing remains elusive; currently pursued research directions face adoption challenges in all aspects from materials, devices to architecture, thermal management, integration, and manufacturing. Crosstalk Computing, a novel emerging computing technique, addresses some of the challenges and proposes a new paradigm for circuit design, scaling, and security. However, like other emerging technologies, Crosstalk Computing also faces challenges like designing large-scale circuits using existing CAD tools, scalability, evaluation and benchmarking of large-scale designs, experimentation through commercial foundry processes to compete/co-exist with CMOS for digital logic implementations. This dissertation addresses these issues by providing a methodology for circuit synthesis customizing the existing EDA tool flow, evaluating and benchmarking against state-of-the-art CMOS for large-scale circuits designed at 7nm from MCNC benchmark suits. This research also presents a study on Crosstalk technology's scalability aspects and shows how the circuits' properties evolve from 180nm to 7nm technology nodes. Some significant results are for primitive Crosstalk gate, designed in 180nm, 65nm, 32nm, and 7nm technology nodes, the average reduction in power is 42.5%, and an average improvement in performance is 34.5% comparing to CMOS for all mentioned nodes. For benchmarking large-scale circuits designed at 7nm, there are 48%, 57%, and 10% improvements against CMOS designs in terms of density, power, and performance, respectively. An experimental demonstration of a proof-of-concept prototype chip for Crosstalk Computing at TSMC 65nm technology is also presented in this dissertation, showing the Crosstalk gates can be realized using the existing manufacturing process. Additionally, the dissertation also provides a fine-grained thermal management approach for emerging technologies like transistor-level 3-D integration (Monolithic 3-D, Skybridge, SN3D), which holds the most promise beyond 2-D CMOS technology. However, such 3-D architectures within small form factors increase hotspots and demand careful consideration of thermal management at all integration levels. This research proposes a new direction for fine-grained thermal management approach for transistor-level 3-D integrated circuits through the insertion of architected heat extraction features that can be part of circuit design, and an integrated methodology for thermal evaluation of 3-D circuits combining different simulation outcomes at advanced nodes, which can be integrated to traditional CAD flow. The results show that the proposed heat extraction features effectively reduce the temperature from a heated location. Thus, the dissertation provides a new perspective to overcome the challenges faced by emerging technologies where the device, circuit, connectivity, heat management, and manufacturing are addressed in an integrated manner.Introduction and motivation -- Cross talk computing overview -- Logic simplification approach for Crosstalk circuit design -- Crostalk computing scalability study: from 180 nm to 7 nm -- Designing large*scale circuits in Crosstalk at 7 nm -- Comparison and benchmarking -- Experimental demonstration of Crosstalk computing -- Thermal management challenges and mitigation techniques for transistor-level- 3D integratio

Modeling and optimization of high-performance many-core systems for energy-efficient and reliable computing

Thesis (Ph.D.)--Boston UniversityMany-core systems, ranging from small-scale many-core processors to large-scale high performance computing (HPC) data centers, have become the main trend in computing system design owing to their potential to deliver higher throughput per watt. However, power densities and temperatures increase following the growth in the performance capacity, and bring major challenges in energy efficiency, cooling costs, and reliability. These challenges require a joint assessment of performance, power, and temperature tradeoffs as well as the design of runtime optimization techniques that monitor and manage the interplay among them. This thesis proposes novel modeling and runtime management techniques that evaluate and optimize the performance, energy, and reliability of many-core systems. We first address the energy and thermal challenges in 3D-stacked many-core processors. 3D processors with stacked DRAM have the potential to dramatically improve performance owing to lower memory access latency and higher bandwidth. However, the performance increase may cause 3D systems to exceed the power budgets or create thermal hot spots. In order to provide an accurate analysis and enable the design of efficient management policies, this thesis introduces a simulation framework to jointly analyze performance, power, and temperature for 3D systems. We then propose a runtime optimization policy that maximizes the system performance by characterizing the application behavior and predicting the operating points that satisfy the power and thermal constraints. Our policy reduces the energy-delay product (EDP) by up to 61.9% compared to existing strategies. Performance, cooling energy, and reliability are also critical aspects in HPC data centers. In addition to causing reliability degradation, high temperatures increase the required cooling energy. Communication cost, on the other hand, has a significant impact on system performance in HPC data centers. This thesis proposes a topology-aware technique that maximizes system reliability by selecting between workload clustering and balancing. Our policy improves the system reliability by up to 123.3% compared to existing temperature balancing approaches. We also introduce a job allocation methodology to simultaneously optimize the communication cost and the cooling energy in a data center. Our policy reduces the cooling cost by 40% compared to cooling-aware and performance-aware policies, while achieving comparable performance to performance-aware policy