Gyrator employing field effect transistors

A gyrator circuit of the conventional configuration of two amplifiers in a circular loop, one producing zero phase shift and the other producing 180 deg phase reversal is examined. All active elements are MOS field effect transistors. Each amplifier comprises a differential amplifier configuration with current limiting transistor, followed by an output transistor in cascode configuration, and two load transistors of opposite conductivity type from the other transistors. A voltage divider control circuit comprises a series string of transistors with a central voltage input to provide control, with locations on the amplifiers receiving reference voltages by connection to appropriate points on the divider. The circuit produces excellent response and is well suited for fabrication by integrated circuits

Aluminum nitride insulating films for MOSFET devices

Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed

High intensity study of THz detectors based on field effect transistors

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2)

Organic Single-Crystal Field-Effect Transistors

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of $\mu$ as high as 15 cm$^2$/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.Comment: Review article, to appear in special issue of Phys. Stat. Sol. on organic semiconductor

Field effect transistors improve buffer amplifier

Unity gain buffer amplifier with a Field Effect Transistor /FET/ differential input stage responds much faster than bipolar transistors when operated at low current levels. The circuit uses a dual FET in a unity gain buffer amplifier having extremely high input impedance, low bias current requirements, and wide bandwidth

Vertical field-effect transistors in III-V semiconductors

Vertical metal-semiconductor field-effect transistors in GaAs/GaAlAs and vertical metal-oxide-semiconductor field-effect transistors (MOSFET's) in InP/GaInPAs materials have been fabricated. These structures make possible short channel devices with gate lengths defined by epitaxy rather than by submicron photolithography processes. Devices with transconductances as high as 280 mS/mm in GaAs and 60 mS/mm (with 100-nm gate oxide) for the InP/GaInPAs MOSFET's were observed

Energy dissipation in graphene field-effect transistors

We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW cm^(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and heating rate, we have to include heat-flow from the graphene to the gate oxide underneath, especially at elevated temperatures, where the graphene thermal conductivity is lowered due to umklapp scattering. Velocity saturation due to phonons with about 50 meV energy is inferred from the measured charge density via shifts in the Raman G-phonon band, suggesting that remote scattering (through field coupling) by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene.Comment: The pdf-file contains the main manuscript (19 pages, 3 figures) and the supplement (5 pages, 4 figures