Direct and indirect exciton mixture in double quantum wells

The exciton system in double quantum well is considered under condition when the ground state is the spatially indirect exciton. At high pumping growth of the exciton concentration can lead to so significant increase of the indirect exciton energy that becomes equal to the direct exciton energy. Then further increase of pumping leads to formation of mixed direct - indirect exciton phase. A rough estimate of the exciton energy in the mixed phase explains puzzling features of some recent exciton measurements. An experiment that would reveal main characteristic features of the mixed phase is suggested.Comment: 10 pages, 2 figure

Suppressing Diffusion-Mediated Exciton Annihilation in 2D Semiconductors Using the Dielectric Environment

Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-order exciton-exciton annihilation, k_XX [cm2/s], is reduced by one or two orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in chemical-treated MoS2 to be D = 0.06 +/- 0.01 cm2/s, corresponding to a diffusion length of LD = 350 nm for an exciton lifetime of {\tau} = 20 ns, which is independent of the substrate. These results, together with numerical simulations, suggest that the effective exciton-exciton annihilation radius monotonically decreases with increasing refractive index of the underlying substrate. Exciton-exciton annihilation limits the overall efficiency of 2D semiconductor devices operating at high exciton densities; the ability to tune these interactions via the dielectric environment is an important step toward more efficient optoelectronic technologies featuring atomically thin materials

Device-spectroscopy of magnetic field effects in a polyfluorene organic light-emitting diode

We perform charge-induced absorption and electroluminescence spectroscopy in a polyfluorene organic magnetoresistive device. Our experiments allow us to measure the singlet exciton, triplet exciton and polaron densities in a live device under an applied magnetic field, and to distinguish between three different models that were proposed to explain organic magnetoresistance. These models are based on different spin-dependent interactions, namely exciton formation, triplet exciton-polaron quenching and bipolaron formation. We show that the singlet exciton, triplet exciton and polaron densities and conductivity all increase with increasing magnetic field. Our data are inconsistent with the exciton formation and triplet-exciton polaron quenching models.Comment: 4 pages, two figure

Exciton-exciton interaction in transition-metal dichalcogenide monolayers

We study theoretically the Coulomb interaction between excitons in transition metal dichalcogenide (TMD) monolayers. We calculate direct and exchange interaction for both ground and excited states of excitons. The screening of the Coulomb interaction, specific to monolayer structures, leads to the unique behavior of the exciton-exciton scattering for excited states, characterized by the non-monotonic dependence of the interaction as function of the transferred momentum. We find that the nontrivial screening enables the description of TMD exciton interaction strength by approximate formula which includes exciton binding parameters. The influence of screening and dielectric environment on the exciton-exciton interaction was studied, showing qualitatively different behavior for ground state and excited states of excitons. Furthermore, we consider exciton-electron interaction, which for the excited states is governed by the dominant attractive contribution of the exchange component, which increases with the excitation number. The results provide a quantitative description of the exciton-exciton and exciton-electron scattering in transition metal dichalcogenides, and are of interest for the design of perspective nonlinear optical devices based on TMD monolayers.Comment: 10 pages, 6 figure

First-principles method of propagation of tightly bound excitons: exciton band structure of LiF and verification with inelastic x-ray scattering

We propose a simple first-principles method to describe propagation of tightly bound excitons. By viewing the exciton as a composite object (an effective Frenkel exciton in Wannier orbitals), we define an exciton kinetic kernel to encapsulate the exciton propagation and decay for all binding energy. Applied to prototypical LiF, our approach produces three exciton bands, which we verified quantitatively via inelastic x-ray scattering. The proposed real-space picture is computationally inexpensive and thus enables study of the full exciton dynamics, even in the presence of surfaces and impurity scattering. It also provides intuitive understanding to facilitate practical exciton engineering in semiconductors, strongly correlated oxides, and their nanostructures.Comment: 5 pages, 4 figures. Accepted by PR