Montana Kaimin, January 6, 1983

Student newspaper of the University of Montana, Missoula. Page 8 is missing.https://scholarworks.umt.edu/studentnewspaper/8492/thumbnail.jp

Almost fall

This work of fiction, which is the first part of a novel, seeks to investigate what happens to people who invent other people. By Experimenting with point of view, character, language and realism, the author examines her own voice as a writer. Through the fiction of the world she has invented, the author orients herself in the world of the tradition out of which she writes

リチウム二次電池に向けたマイクロメータ厚さのシリコン系多孔質負極の急速蒸着技術の開発

学位の種別: 課程博士審査委員会委員 : （主査）東京大学教授 山田 淳夫, 東京大学教授 堂免 一成, 東京大学准教授 辻 佳子, 東京大学准教授 大久保 將史, 早稲田大学教授 門間 聰之, 早稲田大学教授 野田 優University of Tokyo(東京大学

Femtosecond-laser-irradiation-induced structural organization and crystallinity of Bi2WO6

Controlling the structural organization and crystallinity of functional oxides is key to enhancing their performance in technological applications. In this work, we report a strong enhancement of the structural organization and crystallinity of Bi2WO6 samples synthetized by a microwave-assisted hydrothermal method after exposing them to femtosecond laser irradiation. X-ray difraction, UVvis and Raman spectroscopies, photoluminescence emissions, energy dispersive spectroscopy, feld emission scanning electron microscopy, and transmission electron microscopy were employed to characterize the as-synthetized samples. To complement and rationalize the experimental results, frstprinciples calculations were employed to study the efects of femtosecond laser irradiation. Structural and electronic efects induced by femtosecond laser irradiation enhance the long-range crystallinity while decreasing the free carrier density, as it takes place in the amorphous and liquid states. These efects can be considered a clear cut case of surface-enhanced Raman scattering

Preparation and development of non-platinum Pd-Sn catalyst for oxygen electrode of fuel cells

制度:新 ; 報告番号:甲2823号 ; 学位の種類:博士(工学) ; 授与年月日:2009/3/15 ; 早大学位記番号:新504