System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

Design methodologies for built-in testing of integrated RF transceivers with the on-chip loopback technique

Advances toward increased integration and complexity of radio frequency (RF) andmixed-signal integrated circuits reduce the effectiveness of contemporary testmethodologies and result in a rising cost of testing. The focus in this research is on thecircuit-level implementation of alternative test strategies for integrated wirelesstransceivers with the aim to lower test cost by eliminating the need for expensive RFequipment during production testing.The first circuit proposed in this thesis closes the signal path between the transmitterand receiver sections of integrated transceivers in test mode for bit error rate analysis atlow frequencies. Furthermore, the output power of this on-chip loopback block wasmade variable with the goal to allow gain and 1-dB compression point determination forthe RF front-end circuits with on-chip power detectors. The loopback block is intendedfor transceivers operating in the 1.9-2.4GHz range and it can compensate for transmitterreceiveroffset frequency differences from 40MHz to 200MHz. The measuredattenuation range of the 0.052mm2 loopback circuit in 0.13µm CMOS technology was 26-41dB with continuous control, but post-layout simulation results indicate that theattenuation range can be reduced to 11-27dB via optimizations.Another circuit presented in this thesis is a current generator for built-in testing ofimpedance-matched RF front-end circuits with current injection. Since this circuit hashigh output impedance (>1k up to 2.4GHz), it does not influence the input matchingnetwork of the low-noise amplifier (LNA) under test. A major advantage of the currentinjection method over the typical voltage-mode approach is that the built-in test canexpose fabrication defects in components of the matching network in addition to on-chipdevices. The current generator was employed together with two power detectors in arealization of a built-in test for a LNA with 14% layout area overhead in 0.13µm CMOStechnology (<1.5% for the 0.002mm2 current generator). The post-layout simulationresults showed that the LNA gain (S21) estimation with the external matching networkwas within 3.5% of the actual gain in the presence of process-voltage-temperaturevariations and power detector imprecision

Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band

Techniques for Frequency Synthesizer-Based Transmitters.

Internet of Things (IoT) devices are poised to be the largest market for the semiconductor industry. At the heart of a wireless IoT module is the radio and integral to any radio is the transmitter. Transmitters with low power consumption and small area are crucial to the ubiquity of IoT devices. The fairly simple modulation schemes used in IoT systems makes frequency synthesizer-based (also known as PLL-based) transmitters an ideal candidate for these devices. Because of the reduced number of analog blocks and the simple architecture, PLL-based transmitters lend themselves nicely to the highly integrated, low voltage nanometer digital CMOS processes of today. This thesis outlines techniques that not only reduce the power consumption and area, but also significantly improve the performance of PLL-based transmitters.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/113385/1/mammad_1.pd

Built-in-self-test of RF front-end circuitry

Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes

Advancement on the Susceptibility of Analog Front-Ends to EMI

L'abstract è presente nell'allegato / the abstract is in the attachmen

Analysis and Design of a Transmitter for Wireless Communications in CMOS Technology

The number of wireless devices has grown tremendously over the last decade. Great technology improvements and novel transceiver architectures and circuits have enabled an astonishingly expanding set of radio-frequency applications. CMOS technology played a key role in enabling a large-scale diffusion of wireless devices due to its unique advantages in cost and integration. Novel digital-intensive transceivers have taken full advantage of CMOS technology scaling predicted by Moore's law. Die-shrinking has enabled ubiquitous diffusion of low-cost, small form factor and low power wireless devices. However, Radio Frequency (RF) Power Amplifiers (PA) transceiver functionality is historically implemented in a module which is separated from the CMOS core of the transceiver. The PA is traditionally dictating power and battery life of the transceiver, thus justifying its implementation in a tailored technology. By contrast, a fully integrated CMOS transceiver with no external PA would hugely benefit in terms of reduced area and system complexity. In this work, a fully integrated prototype of a Switched-Capacitor Power Amplifier (SCPA) has been implemented in a 28nm CMOS technology. The SCPA provides the functionalities of a PA and of a Radio-Frequency Digital-to-Analog Converter (RF-DAC) in a monolithic CMOS device. The switching output stage of the SCPA enables this circuital topology to reach high efficiencies and offers excellent power handling capabilities. In this work, the properties of the SCPA are analyzed in an extensive and detailed dissertation. Nowadays Wireless Communications operate in a very crowded spectrum, with strict coexistence requirements, thus demanding a strong linearity to the RF-DAC section of the SCPA. A great part of the work of designing a good SCPA is in fact designing a good RF-DAC. To enhance RF-DAC linearity, a precision of the timing of the elements up to the ps range is required. The use of a single core-supply voltage in the whole circuit including the CMOS inverter of the switching output stage enables the use of minimum size devices, improving accuracy and speed in the timing of the elements. The whole circuit operates therefore on low core-supply voltage. Throughout this work, a detailed analysis carefully describes the electromagnetic structures which maximize power and efficiency of low-voltage SCPAs. Due to layout issues subsequent to limited available voltages, however, there is a practical limitation in the maximum achievable power of low-voltage SCPAs. In this work, a Multi-Port Monolithic Power Combiner (PC) is introduced to overcome this limitation and further enhance total achieved system power. The PC sums the power of a collection of SCPAs to a single output, allowing higher output powers at a high efficiency. Benefits, drawbacks and design of SCPA PCs are discussed in this work. The implemented circuit features the combination of four differential SCPAs through a four-way monolithic PC and is simulated to obtain a maximum drain efficiency of 44% at a peak output power of 29dBm on 1.1V supply voltage. Extensive spectrum analysis offers full evaluation of system performances. After exploring state-of-the-art possibilities offered by an advanced 28nm CMOS technology, this work predicts through rigorous theoretical analysis the expected evolution of SCPA performances with the scaling of CMOS Technologies. The encouraging forecast further emphasizes the importance of SCPA circuits for the future of high-performance Wireless Communications

A Multiband Low Noise Amplifier for Software Defined Radio Using Switchable Active Shunt Feedback Input Matching

Radio frequency (RF) receivers are the key front-end blocks in wireless devices such as smartphones, pagers, PDAs etc. An important block of the RF receiver is the Low-noise amplifier. It’s function is to amplify with little noise addition, the RF signal received at the atenna. Modern wireless devices for example the smartphone, incorporates multiple functionalities supported by various RF standards- GPS, Bluetooth, Wifi, GSM etc. Thus, the current trend in the wireless technology is to integrate radio receivers for each RF standard into a single system-on-chip (SoC) in order to reduce cost and area of the devices. In view of this, multiband RF receivers have been developed which feature multiband LNAs. This thesis presents the design and implementation of a multiband LNA for Software Defined Radio Applications. In this thesis, basic radio-frequency concepts are discussed which is followed by a discussion of pros and cons of various multistandard low-noise amplifier topologies. This is then followed by the design of the proposed reconfigurable LNA. The LNA is designed and fabricated in IBM 0.18um CMOS technology. It is made up of dual LC resonant tanks, one to switch between 5.2GHz and 3.5GHz frequency bands and the other, to switch between 2.4GHz and 1.8GHz bands. The input matching of the LNA is achieved using a switchable shunt active feedback network. The LNA achieves S21 of between 10.1dB and 13.43dB. It achieves an input matching (S11) between -13.44 dB and -11.97 dB. The noise figure measured ranges from 2.8 dB to 4.3 dB. The LNA also achieves an IIP3 from -7.12 dBm to -3.45 dBm at 50 MHz offset. The power consumption ranges from 7 mW to 7.2 mW