Micro-Switches with Sputtered Au, AuPd, Au-on-AuPt, and AuPtCu Alloy Electric Contacts

This work is the first to report on a new analytic model for predicting micro-contact resistance and the design, fabrication, and testing of microelectromechanical systems (MEMS) metal contact switches with sputtered bi-metallic (i.e. gold (Au)-on-Au-platinum (Pt), (Au-on-Au-(6%)Pt)), binary alloy (i.e. Au-palladium (Pd), (Au-(2%)Pd)), and tertiary alloy (i.e. Au-Pt-copper (Cu), (Au-(5%)Pt-(0.5%)Cu)) electric contacts. The micro-switches with bi-metallic and binary alloy contacts resulted in contact resistance between 1-2 /spl Omega/ and, when compared to micro-switches with sputtered Au electric contacts, exhibited a 3.3 and 2.6 times increase in switching lifetime, respectively. The tertiary alloy exhibited a 6.5 times increase in switch lifetime with contact resistance ranging from 0.2-1.8 /spl Omega/

Selecting Metal Alloy Electric Contact Materials for MEMS Switches

This paper presents a method for selecting metal alloys as the electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This procedure consists of reviewing macro-switch lessons learned, utilizing equilibrium binary alloy phase diagrams, obtaining thin film material properties and, based on a suitable model, predicting contact resistance performance. After determining a candidate alloy material, MEMS switches were designed, fabricated and tested to validate the alloy selection methodology. Minimum average contact resistance values of 1.17 and 1.87 Ω were measured for micro-switches with gold (Au) and gold–platinum (Au–(6.3%)Pt) alloy electric contacts, respectively. In addition, \u27hot-switched\u27 life cycle test results of 1.02 × 108 and 2.70 × 108 cycles were collected for micro-switches with Au and Au–(6.3%)Pt contacts, respectively. These results indicate increased wear with a small increase in contact resistance for MEMS switches with metal alloy electric contacts

Nonadiabatic transitions in a Stark decelerator

In a Stark decelerator, polar molecules are slowed down and focussed by an inhomogeneous electric field which switches between two configurations. For the decelerator to work, it is essential that the molecules follow the changing electric field adiabatically. When the decelerator switches from one configuration to the other, the electric field changes in magnitude and direction, and this can cause molecules to change state. In places where the field is weak, the rotation of the electric field vector during the switch may be too rapid for the molecules to maintain their orientation relative to the field. Molecules that are at these places when the field switches may be lost from the decelerator as they are transferred into states that are not focussed. We calculate the probability of nonadiabatic transitions as a function of position in the periodic decelerator structure and find that for the decelerated group of molecules the loss is typically small, while for the un-decelerated group of molecules the loss can be very high. This loss can be eliminated using a bias field to ensure that the electric field magnitude is always large enough. We demonstrate our findings by comparing the results of experiments and simulations for the Stark deceleration of LiH and CaF molecules. We present a simple method for calculating the transition probabilities which can easily be applied to other molecules of interest.Comment: 12 pages, 9 figures, minor revisions following referee suggestion

Waveguide switch protector

Device for detecting excessive operation of electric motors used to drive waveguide switches is described. Purpose of device is to prevent burnout of electric motor in event of waveguide stoppage at some point other than extreme limits of travel. Operation of equipment, components used to sense motor performance, and schematic diagram are included

An Electronically Reconfigurable Patch Antenna Design for Polarization Diversity with Fixed Resonant Frequency

In this paper, an electronically polarization reconfigurable circular patch antenna with fixed resonant frequency operating at Wireless Local Area Network (WLAN) frequency band (2.4-2.48 GHz) is presented. The structure of the proposed design consists of a circular patch as a radiating element fed by coaxial probe, cooperated with four equal-length slits etched on the edge along x-axis and y-axis. A total of four switches was used and embedded across the slits at specific locations, thus controlled the length of the slits. By activating and deactivating the switches (ON and OFF) across the slits, the current on the patch is changed, thus modifying the electric field and polarization of the antenna. Consequently, the polarization excited by the proposed antenna can be switched into three types, either linear polarization, left-hand circular polarization or right-hand circular polarization. This paper proposes a simple approach that able to switch the polarizations and excited at the same operating frequency. Simulated and measured results of ideal case (using copper strip switches) and real case (using PIN diode switches) are compared and presented to demonstrate the performance of the antenna

Pulse switching for high energy lasers

A saturable inductor switch for compressing the width and sharpening the rise time of high voltage pulses from a relatively slow rise time, high voltage generator to an electric discharge gas laser (EDGL) also provides a capability for efficient energy transfer from a high impedance primary source to an intermediate low impedance laser discharge network. The switch is positioned with respect to a capacitive storage device, such as a coaxial cable, so that when a charge build-up in the storage device reaches a predetermined level, saturation of the switch inductor releases or switches energy stored in the capactive storage device to the EDGL. Cascaded saturable inductor switches for providing output pulses having rise times of less than ten nanoseconds and a technique for magnetically biasing the saturable inductor switch are disclosed

Microswitches with Sputtered Au, AuPd,Au-on-AuPt, and AuPtCu Alloy Electric Contacts

This paper is the first to report on a new analytic model for predicting microcontact resistance and the design, fabrication, and testing of microelectromechanical systems (MEMS) metal contact switches with sputtered bimetallic (i.e., gold (Au)-on-Au-platinum (Pt), (Au-on-Au-(6.3at%)Pt)), binary alloy (i.e., Au-palladium (Pd), (Au-(3.7at%)Pd)), and ternary alloy (i.e., Au-Pt-copper (Cu), (Au-(5.0at%)Pt-(0.5at%)Cu)) electric contacts. The microswitches with bimetallic and binary alloy contacts resulted in contact resistance values between 1-2Omega. Preliminary reliability testing indicates a 3times increase in switching lifetime when compared to microswitches with sputtered Au electric contacts. The ternary alloy exhibited approximately a 6times increase in switch lifetime with contact resistance values ranging from approximately 0.2-1.8Omeg

High-Energy Quasiparticle Injection into Mesoscopic Superconductors

At nonzero temperatures, superconductors contain excitations known as Bogoliubov quasiparticles. The mesoscopic dynamics of quasiparticles inform the design of quantum information processors, among other devices. Knowledge of these dynamics stems from experiments in which quasiparticles are injected in a controlled fashion, typically at energies comparable to the pairing energy . Here we perform tunnel spectroscopy of a mesoscopic superconductor under high electric field. We observe quasiparticle injection due to field-emitted electrons with 10^6 times the pairing energy, an unexplored regime of quasiparticle dynamics. Upon application of a gate voltage, the quasiparticle injection decreases the critical current and, at sufficiently high electric field, the field-emission current (< 0.1 nA) switches the mesoscopic superconductor into the normal state, consistent with earlier results. We expect that high-energy injection will be useful for developing quasiparticle-tolerant quantum information processors, will allow rapid control of resonator quality factors, and will enable the design of electric-field-controlled superconducting devices with new functionality.Comment: Nat. Nanotechnol. (2021

Characterization of Metal and Metal Alloy Films as Contact Materials in MEMS Switches

This study presents a basic step toward the selection methodology of electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This involves the interrelationship between two important parameters, resistivity and hardness, since they provide the guidelines and assessment of contact resistance, wear, deformation and adhesion characteristics of MEMS switches. For this purpose, thin film alloys of three noble metals, platinum (Pt), rhodium (Rh) and ruthenium (Ru) with gold (Au), were investigated. The interrelationship between resistivity and hardness was established for three levels of alloying of these metals with gold. Thin films of gold (Au), platinum (Pt), ruthenium (Rh) and rhodium (Ru) were also characterized to obtain their baseline data for comparison. All films were deposited on silicon substrates. When Ru, Rh and Pt are alloyed with Au, their hardness generally decreases but resistivity increases. This decrease or increase was, in general, dependent upon the amount of alloying