A Breakdown Voltage Multiplier for High Voltage Swing Drivers

A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 Ω load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector–emitter breakdown voltage without stressing any single transistor

Modification of the digital computer program DLANET to include the effects of differential-input voltage-controlled voltage sources

Computer program for differential-input voltage- controlled voltage source effects in analysis of distributed lumped active network

Symmetry breaking as the origin of zero-differential resistance states of a 2DEG in strong magnetic fields

Zero resistance differential states have been observed in two-dimensional electron gases (2DEG) subject to a magnetic field and a strong dc current. In a recent work we presented a model to describe the nonlinear transport regime of this phenomenon. From the analysis of the differential resistivity and the longitudinal voltage we predicted the formation of negative differential resistivity states, although these states are known to be unstable. Based on our model, we derive an analytical approximated expression for the Voltage-Current characteristics, that captures the main elements of the problem. The result allow us to construct an energy functional for the system. In the zero temperature limit, the system presents a quantum phase transition, with the control parameter given by the magnetic field. It is noted that above a threshold value ($B>B_{th}$), the symmetry is spontaneously broken. At sufficiently high magnetic field and low temperature the model predicts a phase with a non-vanishing permanent current; this is a novel phase that has not been observed so far.Comment: 6 pages, 2 figure

Power waves formulation of oscillation conditions: avoidance of bifurcation modes in cross-coupled VCO architectures

This paper discusses necessity of power-waves formulation to extend voltage-current oriented approaches based on linear concepts such as admittance/impedance operators and transfer-function representations. Importance of multi-physics methodologies, throughout power-waves formulation, for the analysis and design of crystal oscillators is discussed. Interpretation of bifurcation modes in differential cross-coupled VCO architectures in terms of gyrator-like behavior, is proposed. Impact of amplitude level control (ALC) on large-signal phase noise performances is underlined showing necessity of robust control analysis approach relative to power-energy considerations

Current-biased Andreev interferometer

We theoretically investigate the behavior of Andreev interferometers with three superconducting electrodes in the current-biased regime. Our analysis allows to predict a number of interesting features of such devices, such as both hysteretic and non-hysteretic behavior, negative magnetoresistance and two different sets of singularities of the differential resistance at subgap voltages. In the non-hysteretic regime we find a pronounced voltage modulation with the magnetic flux which can be used for improving sensitivity of Andreev interferometers.Comment: 7 pages, 7 figure

Impact of edge shape on the functionalities of graphene-based single-molecule electronics devices

We present an ab-initio analysis of the impact of edge shape and graphene-molecule anchor coupling on the electronic and transport functionalities of graphene-based molecular electronics devices. We analyze how Fano-like resonances, spin filtering and negative differential resistance effects may or may not arise by modifying suitably the edge shapes and the terminating groups of simple organic molecules. We show that the spin filtering effect is a consequence of the magnetic behavior of zigzag-terminated edges, which is enhanced by furnishing these with a wedge shape. The negative differential resistance effect is originated by the presence of two degenerate electronic states localized at each of the atoms coupling the molecule to graphene which are strongly affected by a bias voltage. The effect could thus be tailored by a suitable choice of the molecule and contact atoms if edge shape could be controlled with atomic precision.Comment: 11 pages, 20 figure

Cotunneling through a magnetic single-molecule transistor based on N\atC60

We present an experimental and theoretical study of a magnetic single-molecule transistor based on N@C60 connected to gold electrodes. Particular attention is paid to the regime of intermediate molecule-lead coupling, where cotunneling effects manifest themselves in the Coulomb-blockade regime. The experimental results for the differential conductance as a function of bias, gate voltage, and external magnetic field are in agreement with our analysis of the tunneling rates and provide evidence of magnetic signatures in single-N@C60 devices arising from an antiferromagnetic exchange interaction between the C60 spin and the nitrogen spin.Comment: Accepted for publication in PRB Rapid Com, 4 pages, 4 figures, with supplementary information (6 pages, 3 figures

Subharmonic gap structure in short ballistic graphene junctions

We present a theoretical analysis of the current-voltage characteristics of a ballistic superconductor-normal-superconductor (SNS) junction, in which a strip of graphene is coupled to two superconducting electrodes. We focus in the short-junction regime, where the length of the strip is much smaller than superconducting coherence length. We show that the differential conductance exhibits a very rich subharmonic gap structure which can be modulated by means of a gate voltage. On approaching the Dirac point the conductance normalized by the normal-state conductance is identical to that of a short diffusive SNS junction.Comment: revtex4, 4 pages, 4 figure