SINGLE-EVENT EFFECT STUDY ON A DC/DC PWM USING MULTIPLE TESTING METHODOLOGIES

As the technology advances, the feature size of the modern integrated circuits (ICs) has decreased dramatically to nanometer amplitude. On one hand, the shrink brings benefits, such as high speed and low power consumption per transistor. On the other hand, it poses a threat to the reliable operation of the ICs by the increased radiation sensitivity, such as single event effects (SEEs). For example, in 2010, a commercial-off-the-shelf (COTS) BiCMOS DC/DC pulse width modulator (PWM) IC was observed to be sensitive to neutrons on terrestrial real-time applications, where negative 6-μs glitches were induced by the single event transient (SET) effects. As a result, a project was set up to comprehensively study the failure mechanisms with various test methodologies and to develop SET-tolerant circuits to mitigate the SET sensitivity. First, the pulsed laser technique is adopted to perform the investigation on the SET response of the DC/DC PWM chip. A Ti:Sapphire single photon absorption (SPA) laser with different wavelengths and repetition rates is used as an irradiation source in this study. The sensitive devices in the chip are found to be the bandgap voltage reference circuit thanks to the well-controlled location information of the pulsed laser. The result is verified by comparing with the previous alpha particle and neutron testing data as well as circuit simulation using EDA tools. The root cause for the sensitivity is also acquired by analyzing the circuit. The temperature is also varied to study the effect of the temperature-induced quiescent point shift on the SET sensitivity of the chip. The experimental results show that the quiescent point shifts have different impacts on SET sensitivities due to the different structures and positions of the circuitries. After that, heavy ions, protons, and the pulsed X-ray are used as irradiation sources to further study the SET response of the DC/DC chip. The heavy ion and pulsed laser data are correlated to each other. And the equivalent LETs for laser with wavelengths of 750 nm, 800 nm, 850 nm and 920 nm are acquired. This conclusion can be used to obtain the equivalent heavy ion cross section of any area in a chip by using the pulsed laser technique, which will facilitate the SET testing procedure dramatically. The proton and heavy ion data are also correlated to each other based on a rectangular parallel piped (RPP) model, which gives convenience in Soft Error Rate (SER) estimation. The potential application of pulsed X-ray technique in SET field is also investigated. It is capable of generating similar results with those of heavy ion and pulsed laser testing. Both the advantages and disadvantages of this technique are explained. This provides an alternative choice for the SET testing in the future. Finally, the bandgap voltage reference circuit in the DC/DC PWM is redesigned and fabricated in bulk CMOS 130nm technology and a SET hardened bandgap circuit is proposed and investigated. The CMOS substrate PNP transistor is much less sensitive to SETs than the BiCMOS NPN transistor according to the pulsed laser test results. The reason is analyzed to be the different fabrication processes of the two technologies. The laser test results also indicate that the SET hardened bandgap circuit can mitigate the SET amplitude dramatically, which is consistent with the SPICE simulation results. These researches provide more understandings on the design of SET hardened bandgap voltage reference circuit

Low Voltage Low Light Imager and Photodetector

Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise

Development of the readout electronics for the high luminosity upgrade of the CMS outer strip tracker

The High-luminosity upgrade of the LHC will deliver the dramatic increase in luminosity required for precision measurements and to probe Beyond the Standard Model theories. At the same time, it will present unprecedented challenges in terms of pileup and radiation degradation. The CMS experiment is set for an extensive upgrade campaign, which includes the replacement of the current Tracker with another all-silicon detector with improved performance and reduced mass. One of the most ambitious aspects of the future Tracker will be the ability to identify high transverse momentum track candidates at every bunch crossing and with very low latency, in order to include tracking information at the L1 hardware trigger stage, a critical and effective step to achieve triggers with high purity and low threshold. This thesis presents the development and the testing of the CMS Binary Chip 2 (CBC2), a prototype Application Specific Integrated Circuit (ASIC) for the binary front-end readout of silicon strip detectors modules in the Outer Tracker, which also integrates the logic necessary to identify high transverse momentum candidates by correlating hits from two silicon strip detectors, separated by a few millimetres. The design exploits the relation between the transverse momentum and the curvature in the trajectory of charged particles subject to the large magnetic field of CMS. The logic which follows the analogue amplification and binary conversion rejects clusters wider than a programmable maximum number of adjacent strips, compensates for the geometrical offset in the alignment of the module, and correlates the hits between the two sensor layers. Data are stored in a memory buffer before being transferred to an additional buffer stage and being serially read-out upon receipt of a Level 1 trigger. The CBC2 has been subject to extensive testing since its production in January 2013: this work reports the results of electrical characterization, of the total ionizing dose irradiation tests, and the performance of a prototype module instrumented with CBC2 in realistic conditions in a beam test. The latter is the first experimental demonstration of the Pt-selection principle central to the future of CMS. Several total-ionizing-dose tests highlighted no functional issue, but observed significant excess static current for doses <1 Mrad. The source of the excess was traced to static leakage current in the memory pipeline, and is believed to be a consequence of the high instantaneous dose delivered by the x-ray setup. Nevertheless, a new SRAM layout aimed at removing the leakage path was proposed for the CBC3. The results of single event upset testing of the chip are also reported, two of the three distinct memory circuits used in the chip were proven to meet the expected robustness, while the third will be replaced in the next iteration of the chip. Finally, the next version of the ASIC is presented, highlighting the additional features of the final prototype, such as half-strip resolution, additional trigger logic functionality, longer trigger latency and higher rate, and fully synchronous stub readout.Open Acces

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems

Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade

The Insertable B-layer (IBL) is a fourth pixel layer that will be added inside the existing ATLAS pixel detector during the long LHC shutdown of 2013 and 2014. The new four layer pixel system will ensure excellent tracking, vertexing and b-tagging performance in the high luminosity pile-up conditions projected for the next LHC run. The peak luminosity is expected to reach 3 x 10^34 cm^-2 s^-1 with an integrated luminosity over the IBL lifetime of 300 fb^-1 corresponding to a design lifetime fluence of 5 x 10^15 n_eq cm^-2 and ionizing dose of 250 Mrad including safety factors. The production front-end electronics FE-I4B for the IBL has been fabricated at the end of 2011 and has been extensively characterized on diced ICs as well as at the wafer level. The production tests at the wafer level were performed during 2012. Selected results of the diced IC characterization are presented, including measurements of the on-chip voltage regulators. The IBL powering scheme, which was chosen based on these results, is described. Preliminary wafer to wafer distributions as well as yield calculations are given

ECFA Detector R&D Panel, Review Report

Two special calorimeters are foreseen for the instrumentation of the very forward region of an ILC or CLIC detector; a luminometer (LumiCal) designed to measure the rate of low angle Bhabha scattering events with a precision better than 10$^{-3}$ at the ILC and 10$^{-2}$ at CLIC, and a low polar-angle calorimeter (BeamCal). The latter will be hit by a large amount of beamstrahlung remnants. The intensity and the spatial shape of these depositions will provide a fast luminosity estimate, as well as determination of beam parameters. The sensors of this calorimeter must be radiation-hard. Both devices will improve the e.m. hermeticity of the detector in the search for new particles. Finely segmented and very compact electromagnetic calorimeters will match these requirements. Due to the high occupancy, fast front-end electronics will be needed. Monte Carlo studies were performed to investigate the impact of beam-beam interactions and physics background processes on the luminosity measurement, and of beamstrahlung on the performance of BeamCal, as well as to optimise the design of both calorimeters. Dedicated sensors, front-end and ADC ASICs have been designed for the ILC and prototypes are available. Prototypes of sensor planes fully assembled with readout electronics have been studied in electron beams.Comment: 61 pages, 51 figure

Development of a Detector Control System Chip

Der Large Hadron Collider (LHC) am CERN wird bis 2026 zum High-Luminosity LHC ausgebaut. Diese Erweiterung hat zum Ziel höhere Intensitäten bei den Kollisionen zu erreichen um die gesammelte Luminosität um einen Faktor 10 zu erhöhen. Mit dem grösseren Datensatz können die Eigenschaften des Standard Models der Teilchenphysik genauer vermessen werden. Die Experimente müssen dafür aktualisiert und aufgerüstet werden. Beim ATLAS Experiment wird der komplette innere Detektor für den Betrieb am High-Luminosity LHC mit einem neuen Silizium-Spurdetektor ersetzt. Dieser, ATLAS ITk Detektor genannt, besteht aus mehreren Lagen mit Pixel- und Streifensensoren. Für den ITk Pixeldetektor wird erstmals auch eine serielle Stromversorgung an einem LHC Experiment verwendet. Die serielle Versorgung hat den Vorteil, dass Leitungen und dadurch Material eingespart werden kann. Jedoch gibt es auch Risiken und neue Entwicklungen werden benötigt. Das Detektorkontrollsystem (DCS) hat die Aufgabe den Detektor und seinen Zustand zu überwachen. Das DCS kontrolliert auch den Betrieb des Detektors. Eine Integrierte Schaltung wurde speziell dazu entwickelt. Dieser Pixel Serial Power & Protection (PSPP) genannte Chip misst die Temperatur und Spannung von einem Modul in einer seriellen Versorgungskette. Weiter hat der Chip einen Bypass-Transistor, welcher das Modul kurzschliessen und damit deaktivieren kann. Das erlaubt es einzelne Module in der seriellen Versorgungskette zu steuern, während die anderen Module weiterhin funktionieren. Die Aktivierung des Bypasses kann automatisch erfolgen, sollte die Temperatur oder Spannung des Moduls zu gross werden. Auf Basis eines existierenden Prototyps wurden während dieser Arbeit weitere Versionen des PSPP entwickelt. Diese beinhalten alle benötigten Funktionen und können einen Strom von 8 A schalten. Der entwickelte PSPP wurde bis zu einer totalen ionisierenden Dosis von 800 Mrad erfolgreich getestet. Weiter wurden Tests der Resistenz gegenüber strahlenbasierten Bit-Flips durchgeführt. Es wurde ein Wirkungsquerschnitt kleiner 1.7 × 10⁻¹⁷ cm² gemessen. Ein Chip wurde auch in einer Klimakammer bei Temperaturen zwischen (0 und 60) °C während 42 Tagen erfolgreich betrieben. Während dieses Dauertests wurden keine Fehlfunktionen beobachtet. Der PSPP wurde ausserdem in einem Systemtest mit Sensormodulen und realistischer mechanischer Struktur eingesetzt. Die Funktion des PSPPs war hilfreich bei der Inbetriebnahme und Fehlersuche. Die automatische Bypass-Aktivierung bewahrte die Module vor Schäden. Mit Hilfe der vom PSPP gemessenen Daten wurde die Spezifikation der seriellen Versorgungskette verbessert.The Large Hadron Collider (LHC) at CERN will be updated to the High-Luminosity LHC by 2026. The goal of this update is to achieve higher intensities in the collisions and collect ten times more luminosity than with the LHC. This gives higher statistics to measure with greater precision the parameters of the standard model in particle physics. The ATLAS experiment will receive a completely new inner tracker for operation at the High-Luminosity LHC. This ATLAS ITk detector is a full silicon tracking detector with pixel and strip sensors. A serial power approach is foreseen for the ITk Pixel detector. This reduces the number of services and material, however, has also risks and new challenges. The task of the detector control system (DCS) is to monitor the health of the experiment and control the operation. An integrated circuit was developed for this task. The so-called pixel serial power & protection (PSPP) chip measures the voltage and temperature of a module in the serial power chain. Additionally, it includes a bypass transistor to deactivate a single module if necessary. The bypass is activated automatically in case of over-temperature or over-voltage. This gives full control over each module and allows to recover a serial power chain in case of a faulty module. Based on an existing prototype, new versions of the PSPP were developed for this thesis. They include all required functionalities and can switch a current of 8 A. The developed prototype is functional to a total integrated dose of 800 Mrad, which was tested in X-Ray irradiations. Further, tests were performed to verify the protection against single event upsets causing bit flips in the internal registers. The cross-section of the triplicated registers in the PSPP was measured with a proton test beam and is smaller than 1.7 × 10⁻¹⁷ cm² . The PSPP prototype successfully resisted temperatures between (0 and 60) °C in a 42-day long climate chamber test. No failure was observed. A system test with prototype modules was built at CERN to verify the concept of the serial power chain. This used realistic services and mechanical structures. The PSPP chip was included in the system test and proofed to be very useful during commissioning and debugging. The bypass and its protection function prevented damage to detector modules. The PSPP delivered useful monitoring data to refine the requirements of the serial power chain