Explainable Neural Networks based Anomaly Detection for Cyber-Physical Systems

Cyber-Physical Systems (CPSs) are the core of modern critical infrastructure (e.g. power-grids) and securing them is of paramount importance. Anomaly detection in data is crucial for CPS security. While Artificial Neural Networks (ANNs) are strong candidates for the task, they are seldom deployed in safety-critical domains due to the perception that ANNs are black-boxes. Therefore, to leverage ANNs in CPSs, cracking open the black box through explanation is essential. The main objective of this dissertation is developing explainable ANN-based Anomaly Detection Systems for Cyber-Physical Systems (CP-ADS). The main objective was broken down into three sub-objectives: 1) Identifying key-requirements that an explainable CP-ADS should satisfy, 2) Developing supervised ANN-based explainable CP-ADSs, 3) Developing unsupervised ANN-based explainable CP-ADSs. In achieving those objectives, this dissertation provides the following contributions: 1) a set of key-requirements that an explainable CP-ADS should satisfy, 2) a methodology for deriving summaries of the knowledge of a trained supervised CP-ADS, 3) a methodology for validating derived summaries, 4) an unsupervised neural network methodology for learning cyber-physical (CP) behavior, 5) a methodology for visually and linguistically explaining the learned CP behavior. All the methods were implemented on real-world and benchmark datasets. The set of key-requirements presented in the first contribution was used to evaluate the performance of the presented methods. The successes and limitations of the presented methods were identified. Furthermore, steps that can be taken to overcome the limitations were proposed. Therefore, this dissertation takes several necessary steps toward developing explainable ANN-based CP-ADS and serves as a framework that can be expanded to develop trustworthy ANN-based CP-ADSs

Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications

InP based InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs) have shown outstanding performances, which makes them prominent in high frequency mm-wave and submillimeter-wave applications. However, conventional InGaAs/InAlAs pHEMTs have major drawbacks, i.e., very low breakdown voltage and high gate leakage current. These disadvantages degrade device performance, especially in Monolithic Microwave Integrated Circuit (MMIC) low noise amplifiers (LNAs). The optimisation of InAlAs/InGaAs epilayer structures through advanced bandgap engineering together with gate length reduction from 1 m into deep sub-μm regime is the key solution to enabled high breakdown and ultra-high speed, low noise pHEMT devices to be fabricated. Concurrently, device modelling plays a vital role in the design and analysis of pHEMT device and circuit performance. Physical modeling becomes essential to fully characterise and understand the underlying physical phenomenon of the device, while empirical modelling is significant in circuit design and predicts device’s characteristic performance. In this research, the main objectives to accurately model the DC and RF characteristics of the two-dimensional (2D) physical modelling for sub-μm gate length for strained channel InAlAs/InGaAs/InP pHEMT has been accomplished and developed in ATLAS Silvaco. All modelled devices were optimised and validated by experimental devices which were fabricated at the University of Manchester; the sub-micrometer devices were developed with T-gate using I-line optical lithography. The underlying device physics insight are gained, i.e, the effects of changes to the device’s physical structure, theoretical concepts and its general operation, hence a reliable pHEMT model is obtained. The kink anomalies in I-V characteristics was reproduced and the 2D simulation results demonstrate an outstanding agreement with measured DC and RF characteristics. The aims to develop linear and nonlinear models for sub-μm transistors and their implementation in MMIC LNA design is achieved with the 0.25 m In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT. An accurate technique for the extraction of empirical models for the fabricated active devices has been developed and optimised using Advance Design System (ADS) software which demonstrate excellent agreement between experimental and modelled DC and RF data. A precise models for MMIC passive devices have also been obtained and incorporated in the proposed design for a single and double stage MMIC LNAs in C- and X-band frequency. The single stage LNA is designed to achieve maximum gain ranging from 9 to 13 dB over the band of operation while the gain is increased between 20 dB and 26 dB for the double stage LNA designs. A noise figure of less than 1.2 dB and 2 dB is expected respectively, for the C- and X-band LNA designed while retaining stability across the entire frequency bands. Although the RF performance of pHEMT is being vigorously pushed towards terahertz region, novel devices such as Resonant Tunnelling Diode (RTD) are needed to support future ultra-high speed, high frequency applications especially when it comes to THz frequencies. Hence, the study of physical modelling is extended to quantum modelling of an advanced In0.8Ga0.2As/AlAs RTD device to effectively model both large size and submicron RTD using Silvaco’s ATLAS software to reproduce the peak current density, peak-to-valley-current ratio (PVCR), and negative differential resistance (NDR) voltage range. The simple one-dimensional physical modelling for the RTD devices is optimised to achieve an excellent match with the fabricated RTD devices with variations in the spacer thickness, barrier thickness, quantum well thickness and doping concentration

Corporation robots

Nowadays, various robots are built to perform multiple tasks. Multiple robots working together to perform a single task becomes important. One of the key elements for multiple robots to work together is the robot need to able to follow another robot. This project is mainly concerned on the design and construction of the robots that can follow line. In this project, focuses on building line following robots leader and slave. Both of these robots will follow the line and carry load. A Single robot has a limitation on handle load capacity such as cannot handle heavy load and cannot handle long size load. To overcome this limitation an easier way is to have a groups of mobile robots working together to accomplish an aim that no single robot can do alon