A 100-MIPS GaAs asynchronous microprocessor

The authors describe how they ported an asynchronous microprocessor previously implemented in CMOS to gallium arsenide, using a technology-independent asynchronous design technique. They introduce new circuits including a sense-amplifier, a completion detection circuit, and a general circuit structure for operators specified by production rules. The authors used and tested these circuits in a variety of designs

Advances on CMOS image sensors

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets

Field Effect Transistor Nanosensor for Breast Cancer Diagnostics

Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical properties and small dimensions, silicon nanochannels are ideally suited for extraordinarily high sensitivity. In fact, the high surface-to-volume ratios of these systems make single molecule detection possible. Further, FET biosensors offer the benefits of high speed, low cost, and high yield manufacturing, without sacrificing the sensitivity typical for traditional optical methods in diagnostics. Top down manufacturing methods leverage advantages in Complementary Metal Oxide Semiconductor (CMOS) technologies, making richly multiplexed sensor arrays a reality. Here, we discuss the fabrication and use of silicon nanochannel FET devices as biosensors for breast cancer diagnosis and monitoring

A neural probe with up to 966 electrodes and up to 384 configurable channels in 0.13 μm SOI CMOS

In vivo recording of neural action-potential and local-field-potential signals requires the use of high-resolution penetrating probes. Several international initiatives to better understand the brain are driving technology efforts towards maximizing the number of recording sites while minimizing the neural probe dimensions. We designed and fabricated (0.13-μm SOI Al CMOS) a 384-channel configurable neural probe for large-scale in vivo recording of neural signals. Up to 966 selectable active electrodes were integrated along an implantable shank (70 μm wide, 10 mm long, 20 μm thick), achieving a crosstalk of −64.4 dB. The probe base (5 × 9 mm2) implements dual-band recording and a 1

Energy challenges for ICT

The energy consumption from the expanding use of information and communications technology (ICT) is unsustainable with present drivers, and it will impact heavily on the future climate change. However, ICT devices have the potential to contribute signi - cantly to the reduction of CO2 emission and enhance resource e ciency in other sectors, e.g., transportation (through intelligent transportation and advanced driver assistance systems and self-driving vehicles), heating (through smart building control), and manu- facturing (through digital automation based on smart autonomous sensors). To address the energy sustainability of ICT and capture the full potential of ICT in resource e - ciency, a multidisciplinary ICT-energy community needs to be brought together cover- ing devices, microarchitectures, ultra large-scale integration (ULSI), high-performance computing (HPC), energy harvesting, energy storage, system design, embedded sys- tems, e cient electronics, static analysis, and computation. In this chapter, we introduce challenges and opportunities in this emerging eld and a common framework to strive towards energy-sustainable ICT

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

The 2018 GaN Power Electronics Roadmap

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here

Characterization of a Single Photon Sensing and Photon Number Resolving CMOS Detector for Astrophysics

Next-generation NASA missions, such as the LUVIOR and HabEx concepts, require single photon counting large-format detectors. Charge Coupled Devices (CCDs) have typically been used for optical applications in similar flagship missions of the past. CCDs have excellent properties in most metrics but have their own challenges for single photon counting applications. First, typical CCDs have a read noise of a few electrons, although recent modifications (EMCCDs) use an on-chip gain to amplify the signal above the read noise. Secondly, the signal is carried by charge that is transferred across the detector array. While CCDs for NASA missions are carefully fabricated to minimize defects, continuous bombardment from high energy radiation in space will damage the detector over the lifetime of the mission. This will degrade the charge transfer efficiency and in turn, reduce the single photon counting ability of the CCD. CMOS devices offer a different architecture that mitigates some of these problems. In CMOS image sensors, each pixel has its own charge to voltage converter and in-pixel amplifier mitigating issues found with charge transfer efficiency. Additional circuits that are critical to operation of the sensor can be incorporated on chip allowing for a parallel readout architecture that increases frame rate and can decrease read noise. This thesis is a collection of work for the characterization of a room temperature characterization, low-noise, single photon counting and photon number resolving CMOS detector. The work performed in this thesis will provide the framework for a technology development project funded by NASA Cosmic Origins (COR) program office. At the end of the two-year project, a megapixel CMOS focal plane array will be demonstrated to satisfy the stated needs of the LUVOIR and HabEx future astrophysics space mission concepts with a launch date near the 2040s