65,728 research outputs found

    Virtual manufacturing: prediction of work piece geometric quality by considering machine and set-up

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    Lien vers la version éditeur: http://www.tandfonline.com/doi/full/10.1080/0951192X.2011.569952#.U4yZIHeqP3UIn the context of concurrent engineering, the design of the parts, the production planning and the manufacturing facility must be considered simultaneously. The design and development cycle can thus be reduced as manufacturing constraints are taken into account as early as possible. Thus, the design phase takes into account the manufacturing constraints as the customer requirements; more these constraints must not restrict the creativity of design. Also to facilitate the choice of the most suitable system for a specific process, Virtual Manufacturing is supplemented with developments of numerical computations (Altintas et al. 2005, Bianchi et al. 1996) in order to compare at low cost several solutions developed with several hypothesis without manufacturing of prototypes. In this context, the authors want to predict the work piece geometric more accurately by considering machine defects and work piece set-up, through the use of process simulation. A particular case study based on a 3 axis milling machine will be used here to illustrate the authors’ point of view. This study focuses on the following geometric defects: machine geometric errors, work piece positioning errors due to fixture system and part accuracy

    Investigating Automatic Static Analysis Results to Identify Quality Problems: an Inductive Study

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    Background: Automatic static analysis (ASA) tools examine source code to discover "issues", i.e. code patterns that are symptoms of bad programming practices and that can lead to defective behavior. Studies in the literature have shown that these tools find defects earlier than other verification activities, but they produce a substantial number of false positive warnings. For this reason, an alternative approach is to use the set of ASA issues to identify defect prone files and components rather than focusing on the individual issues. Aim: We conducted an exploratory study to investigate whether ASA issues can be used as early indicators of faulty files and components and, for the first time, whether they point to a decay of specific software quality attributes, such as maintainability or functionality. Our aim is to understand the critical parameters and feasibility of such an approach to feed into future research on more specific quality and defect prediction models. Method: We analyzed an industrial C# web application using the Resharper ASA tool and explored if significant correlations exist in such a data set. Results: We found promising results when predicting defect-prone files. A set of specific Resharper categories are better indicators of faulty files than common software metrics or the collection of issues of all issue categories, and these categories correlate to different software quality attributes. Conclusions: Our advice for future research is to perform analysis on file rather component level and to evaluate the generalizability of categories. We also recommend using larger datasets as we learned that data sparseness can lead to challenges in the proposed analysis proces

    Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication

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    Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconductor compounds with gallium (Ga) have developed as the leading materials for manufacturing energy-efficient LED [1]. The reason of GaN becoming the trend is due to the excellent optical properties and it is able to emit a wide range of wavelengths in the visible spectrum at the efficiency which greater than traditional lighting technologies [2]. The group III – nitride semiconductor compounds are typically grown with wurtzite crystal structure which consists of a large band gap around 1.0 eV to 6.0 eV
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