Millimeter-wave diode-grid phase shifters

Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A Phase shift of 70° with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies form 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-Ω series resistances would have a loss of 1.4 dB at 90 GHz

Gallium phosphide high temperature diodes

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO3_3-SrTiO3_3 Interfaces

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C

Mounting for diodes provides efficient heat sink

Efficient heat sink is provided by soldering diodes to metal support bars which are brazed to a ceramic base. Electrical connections between diodes on adjacent bars are made flexible by metal strips which aid in heat dissipation

Switchable metamaterial reflector/absorber for different polarized electromagnetic waves

We demonstrate a controllable electromagnetic wave reflector/absorber for different polarizations with metamaterial involving electromagnetic resonant structures coupled with diodes. Through biasing at different voltages to turn ON and OFF the diodes, we are able to switch the structure between nearly total reflection and total absorption of a particularly polarized incident wave. By arranging orthogonally orientated resonant cells, the metamaterial can react to different polarized waves by selectively biasing the corresponding diodes. Both numerical simulations and microwave measurements have verified the performance.Comment: 11 pages, 4 figure

Generalization of the Langmuir–Blodgett laws for a nonzero potential gradient

The Langmuir–Blodgett laws for cylindrical and spherical diodes and the Child–Langmuir law for planar diodes repose on the assumption that the electric field at the emission surface is zero. In the case of ion beam extraction from a plasma, the Langmuir–Blodgett relations are the typical tools of study, however, their use under the above assumption can lead to significant error in the beam distribution functions. This is because the potential gradient at the sheath/beam interface is nonzero and attains, in most practical ion beam extractors, some hundreds of kilovolts per meter. In this paper generalizations to the standard analysis of the spherical and cylindrical diodes to incorporate this difference in boundary condition are presented and the results are compared to the familiar Langmuir–Blodgett relation

AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

AlGaInN ridge waveguide laser diodes are fabricated to achieve single-mode operation with optical powers up to 100 mW at ∼420  nm∼420  nm for visible free-space, underwater, and plastic optical fiber communication. We report high-frequency operation of AlGaInN laser diodes with data transmission up to 2.5 GHz for free-space and underwater communication and up to 1.38 GHz through 10 m of plastic optical fiber

Reciprocity in reflection and transmission: what is a "phonon diode"?

The newly popular topic of "phonon diodes" is discussed in the context of a broader issue of reciprocity in reflection/transmission (R-T) of waves. We first review a theorem well known in electromagnetism and optics but underappreciated in acoustics and phonon physics, stating that the matrix of R-T coefficients for properly normalized amplitudes is symmetric for linear systems that conform to power conservation and time reversibility for wave fields. It is shown that linear structures proposed for "acoustic diodes" in fact do obey R-T reciprocity, and thus should not strictly be called diodes or isolators. We also review examples of nonlinear designs violating reciprocity, and conclude that an efficient acoustic isolator has not yet been demonstrated. Finally, we consider the relationship between acoustic isolators and "thermal diodes", and show that ballistic phonon transport through a linear structure, whether an acoustic diode or not, is unlikely to form the basis for a thermal diode