The First United States Microgravity Laboratory

The United States Microgravity Laboratory (USML-1) is one part of a science and technology program that will open NASA's next great era of discovery and establish the United States' leadership in space. A key component in the preparation for this new age of exploration, the USML-1 will fly in orbit for extended periods, providing greater opportunities for research in materials science, fluid dynamics, biotechnology, and combustion science. The major components of the USML-1 are the Crystal Growth Furnace, the Surface Tension Driven Convection Experiment (STDCE) Apparatus, and the Drop Physics Module. Other components of USML-1 include Astroculture, Generic Bioprocessing Apparatus, Extended Duration Orbiter Medical Project, Protein Crystal Growth, Space Acceleration Measurement System, Solid Surface Combustion Experiment, Zeolite Crystal Growth and Spacelab Glovebox provided by the European Space Agency

Summary results of the Industry Conference on the Commercial Use of Space

The future intentions of the Federal Republic of Germany in the area of the commercialization of space are presented. It is shown that significant advances in microgravity research, particulary in the areas of materials science, composite materials, physical chemistry, crystal growth, biology, and process engineering will have an effect on future plans for establishing sponsoring organizations to guide commercial interests in German space research. An organizational and functional outline of a proposed sponsoring organization to promote space commercialization under German supervision, including the objectives, the target group to be served, and the administrative structure, is presented. The role of the DFVLR (German Aerospace Research Establishment) and the BMFT (German Ministry for Research and Technology) as sponsoring organizations representing the interests of the German government is shown

Temperature profiles in high gradient furnaces

Accurate temperature measurement of the furnace environment is very important in both the science and technology of crystal growth as well as many other materials processing operations. A high degree of both accuracy and precision is acutely needed in the directional solidification of compound semiconductors in which the temperature profiles control the freezing isotherm which, in turn, affects the composition of the growth with a concomitant feedback perturbation on the temperature profile. Directional solidification requires a furnace configuration that will transport heat through the sample being grown. A common growth procedure is the Bridgman Stockbarger technique which basically consists of a hot zone and a cold zone separated by an insulator. In a normal growth procedure the material, contained in an ampoule, is melted in the hot zone and is then moved relative to the furnace toward the cold zone and solidification occurs in the insulated region. Since the primary path of heat between the hot and cold zones is through the sample, both axial and radial temperature gradients exist in the region of the growth interface. There is a need to know the temperature profile of the growth furnace with the crystal that is to be grown as the thermal load. However it is usually not feasible to insert thermocouples inside an ampoule and thermocouples attached to the outside wall of the ampoule have both a thermal and a mechanical contact problem as well as a view angle problem. The objective is to present a technique of calibrating a furnace with a thermal load that closely matches the sample to be grown and to describe procedures that circumvent both the thermal and mechanical contact problems

Microgravity: A Teacher's Guide With Activities in Science, Mathematics, and Technology

The purpose of this curriculum supplement guide is to define and explain microgravity and show how microgravity can help us learn about the phenomena of our world. The front section of the guide is designed to provide teachers of science, mathematics, and technology at many levels with a foundation in microgravity science and applications. It begins with background information for the teacher on what microgravity is and how it is created. This is followed with information on the domains of microgravity science research; biotechnology, combustion science, fluid physics, fundamental physics, materials science, and microgravity research geared toward exploration. The background section concludes with a history of microgravity research and the expectations microgravity scientists have for research on the International Space Station. Finally, the guide concludes with a suggested reading list, NASA educational resources including electronic resources, and an evaluation questionnaire

Residual stress relaxation and microstructure in ZnO thin films

Stability under normal environmental conditions over a long period of time is crucial for sustainable thin-film device performance. Pure ZnO films with thicknesses in the 140 - 450 nm range were deposited on amorphous glass microscope slides and (100)-oriented single crystal silicon wafers by radio frequency magnetron sputtering. The depositions were performed at a starting temperature of 200 oC. ZnO films had a columnar microstructure strongly textured along the direction. XRD peak-shift analysis revealed that the films were under residual, compressive, in-plane stress of -5.46 GPa for the glass substrate and -6.69 GPa for the Si substrate. These residual stresses could be completely relaxed by thermal annealing in air. When left under normal environmental condition over an extended period of time the films failed under buckling leading to extensive cracking of the films. The XRD and SEM results indicated different mechanisms of stress relaxation that were favored in the ZnO thin films depending on the energy provided. Although thermal annealing eliminated residual stresses, serious micro-structural damage upon annealing was observed. Thermal annealing also led to preferential growth of some ZnO crystals in the films. This kind of behavior is believed to be indicative of stress-induced directional diffusion of ZnO. It appears that for the extended stability of the films, the stresses have to be eliminated during deposition

Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume III: Silicon sheet: wafers and ribbons

The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985. To accomplish this, the FSA Project established and managed an Industry, University, and Federal Government Team to perform the needed research and development. The primary objective of the Silicon Sheet Task of the FSA Project was the development of one or more low-cost technologies for producing silicon sheet suitable for processing into cost-eompetitive solar cells. Silicon sheet refers to high-purity crystalline silicon of size and thickness for fabrication into solar cells. The Task effort began with state-of-the-art sheet technologies and then solicited and supported any new silicon sheet alternatives that had the potential to achieve the Project goals. A total of 48 contracts were awarded that covered work in the areas of ingot growth and casting, wafering, ribbon growth, other sheet technologies, and programs of supportive research. Periodic reviews of each sheet technology were held, assessing the technical progress and the long-range potential. Technologies that failed to achieve their promise, or seemed to have lower probabilities for success in comparison with others, were dropped. A series of workshops was initiated to assess the state of the art, to provide insights into problems remaining to be addressed, and to support technology transfer. The Task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high-quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the Task cost goals were not achieved. This FSA Final Report (JPL Publication 86-31, 5101-289, DOE/JPL 1012-125, October 1986) is composed of eight volumes, consisting of an Executive Summary and seven technology reports: Volume I: Executive Summary. Volume II: Silicon Material. Volume III: Silicon Sheet: Wafers and Ribbons Volume IV: High-Efficiency Solar Celis. Volume V: Process Development. Volume VI: Engineering Sciences and Reliability. Volume VII: Module Encapsulation. Volume VIII: Project Analysis and Integration. Two supplemental reports included in the final report package are: FSA Project: 10 Years of Progress, JPL Document 400-279. 5101-279, October 1985. Summary of FSA Project Documentation: Abstracts of Published Documents, 1975 to 1986, JPL Publication 82-79 (Revision 1),5101-221, DOE/JPL-1 012-76, September 1986

Growth Techniques for Bulk ZnO and Related Compounds

ZnO bulk crystals can be grown by several methods. 1) From the gas phase, usually by chemical vapor transport. Such CVT crystals may have high chemical purity, as the growth is performed without contact to foreign material. The crystallographic quality is often very high (free growth). 2) From melt fluxes such as alkaline hydroxides or other oxides (MoO3, V2O5, P2O5, PbO) and salts (PbCl2, PbF2). Melt fluxes offer the possibility to grow bulk ZnO under mild conditions (<1000 deg. C, atmospheric pressure), but the crystals always contain traces of solvent. The limited purity is a severe drawback, especially for electronic applications. 3) From hydrothermal fluxes, usually alkaline (KOH, LiOH) aqueous solutions beyond the critical point. Due to the amphoteric character of ZnO, the supercritical bases can dissolve it up to several per cent of mass. The technical requirements for this growth technology are generally hard, but this did not hinder its development as the basic technique for the growth of {\alpha}-quartz, and meanwhile also of zinc oxide, during the last decades. 4) From pure melts, which is the preferred technology for numerous substances applied whenever possible, e.g. for the growth of silicon, gallium arsenide, sapphire, YAG. The benefits of melt growth are (i) the high growth rate and (ii) the absence of solvent related impurities. In the case of ZnO, however, it is difficult to find container materials that are compatible from the thermal (fusion point Tf = 1975 deg. C) and chemical (required oxygen partial pressure) point of view. Either cold crucible (skull melting) or Bridgman (with reactive atmosphere) techniques were shown to overcome the problems that are inherent to melt growth. Reactive atmospheres allow to grow not only bulk ZnO single crystals, but also other TCOs such as {\beta}-Ga2O3 and In2O3.Comment: 10 pages, 7 figures, talk on MRS Fall 2011 Bosto

Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems: limiting effects on device potential.

We report ZnO nanowire/nanowall growth using a two-step vapour phase transport method on a-plane sapphire. X-ray diffraction and scanning electron microscopy data establish that the nanostructures are vertically well-aligned with c-axis normal to the substrate, and have a very low rocking curve width. Photoluminescence data at low temperatures demonstrate the exceptionally high optical quality of these structures, with intense emission and narrow bound exciton linewidths. We observe a high energy excitonic emission at low temperatures close to the band-edge which we assign to the surface exciton in ZnO at ~ 3.366 eV, the first time this feature has been reported in ZnO nanorod systems. This assignment is consistent with the large surface to volume ratio of the nanowire systems and indicates that this large ratio has a significant effect on the luminescence even at low temperatures. The band-edge intensity decays rapidly with increasing temperature compared to bulk single crystal material, indicating a strong temperature-activated non-radiative mechanism peculiar to the nanostructures. No evidence is seen of the free exciton emission due to exciton delocalisation in the nanostructures with increased temperature, unlike the behaviour in bulk material. The use of such nanostructures in room temperature optoelectronic devices appears to be dependent on the control or elimination of such surface effects