High speed IC designs for low power short reach optical links

In this thesis, I have briefly introduced the background of my PhD research, current state-of-the-art design, and my PhD research objectives. Then, I demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM’s Vπ. This is important when driver circuits are realized in deep submicron CMOS process nodes. Next, a driving scheme based upon a switched capacitor approach is proposed to maximize the achievable bandwidth of the combined lumped MZM and CMOS driver chip. This scheme allows the use of lumped MZM for high speed optical links with reduced RF driver power consumption compared to the conventional approach of driving MZMs (with transmission line based electrodes) with a power amplifier. This is critical for upcoming short-reach link standards such as 400Gb/s 802.3 Ethernet. The driver chip was fabricated using a 65nm CMOS technology and flip-chipped on top of the Silicon Photonic chip (fabricated using IMEC’s ISIPP25G technology) that contains the MZM. Open eyes with 4dB extinction ratio for a 36Gb/s (18Gbaud) PAM- 4 signal are experimentally demonstrated. The electronic driver chip has a core area of only 0.11mm 2 and consumes 236mW from 1.2V and 2.4V supply voltages. This corresponds to an energy efficiency of 6.55pJ/bit including Gray encoder and retiming, or 5.37pJ/bit for the driver circuit only. In the future, system level analysis should be carried out to investigate the critical pattern issue of the PAM4 optical transmitter. The potential solutions toward 1pJ/bit are given (lumped EAM and micro-ring modulator). In addition, the advanced modulation formats (16 QAM, discrete multitone modulation, and FFE) are presented based on the switched capacitor approach

Providing Bi-Directional, Analog, and Differential Signal Transmission Capability to an Electronic Prototyping Platform

RÉSUMÉ Les réseaux d’interconnexions programmables (FPIN) se retrouvent largement utilisés dans plusieurs structures bien connues telles que les FPGA, les plateformes de prototypages ainsi que dans plusieurs architectures de réseaux intégrés. Le but de la présente thèse est d’améliorer la structure actuelle des FPIN ainsi que les plateformes de prototypages se basant sur cette technologie afin d’y intégrer d’autres fonctionnalités telles que des interfaces pour les signaux bidirectionnels de type drain-ouvert, les signaux analogiques ou bien les signaux différentiels. Cette thèse présente trois différents circuits qui ont été implémentés dans cette optique. Les interconnexions de ces trois circuits peuvent être reconfigurées pour supporter une interface de type bidirectionnelle drain-ouvert, de type analogique ou différentielle, le tout au travers un réseau d’interconnexions configurable numérique unidirectionnel, ou FPIN. Le besoin d’une telle interface fut tout d’abord envisagé dans le contexte du WaferBoard, qui consiste en une plateforme reconfigurable de prototypage pour les systèmes électroniques. Le cœur de ce WaferBoard consiste en un circuit intégré à l’échelle d’une tranche entière de silicium, qui est constitué d’une matrice bidimensionnelle de cellules. Une large partie de la surface disponible s’en retrouve déjà utilisée par des plots configurables (CIO), l’aiguillage des multiplexeurs du FPIN, des registres dédiés à la chaine JTAG et d’autres circuiteries de contrôle. De ce fait, il en devient primordial que les interfaces bidirectionnelle drain-ouvert, analogique et différentielle soit les plus compactes possibles. Puisque ces circuits d’interfaces seront dédiés pour une plateforme utilisant une tranche de silicium (wafer-scale), l’architecture de ces derniers doit être robuste en regard des variations de procédé, de la température ainsi que de l’alimentation. La première contribution de cette thèse est l’élaboration et la conception d’une interface de type drain-ouvert ainsi que de son support d’interconnexion bidirectionnel utilisant un réseau numérique unidirectionnel à signalisation asymétrique (à l’opposé de la signalisation différentielle) FPIN. L’interface proposée peut interconnecter plusieurs nœuds d’un FPIN. À l’aide de cette interface, le réseau d’interconnexions peut imiter le comportement et le fonctionnement d’un bus de type drain-ouvert (ou collecteur-ouvert) (tel qu’utilisé par le protocole I2C). De ce fait, plusieurs plots de type drain-ouvert provenant d’une multitude de circuits-intégrés (ICs) différents peuvent y être connectés au travers le FPIN à l’aide de l’interface proposée.----------ABSTRACT Field programmable interconnection networks (FPINs) are ubiquitously found embedded in field-programmable gate arrays (FPGAs), in prototyping platforms, and in many Network-on-Chip architectures. The aim of this research was to augment the application domains of current FPIN-based prototyping and emulation platforms by supporting open-drain bi-directional signals, analog signals or differential signals. Three interface circuits have been elaborated and developed to that end in this thesis. These three interface circuits can support reconfigurable routing of open-drain bi-directional, analog and differential signals through an uni-directional digital FPIN. The need for such interface circuits were originally conceived in the context of the WaferBoard, a system prototyping platform. The core of the WaferBoard is a wafer-scale IC that is composed of a two dimensional array of unit cells. Available area was already over-utilized by the configurable I/O (CIO) buffers, crossbar multiplexers of the FPIN, registers of the JTAG chain, and other control circuits. Thus, the interface circuits for open-drain bi-directional, analog and differential signaling had to be made very compact. As the implementation of these interface circuits target “wafer-scale” integration, these interface circuits had to be very robust to parametric variations (process, temperature, power supply). The first contribution of this thesis is the elaboration and development of an open-drain interface circuit and a corresponding interconnect topology to support bi-directional communication through the uni-directional digital FPIN of prototyping platforms. The proposed interface can interconnect multiple nodes in a FPIN. With that interface, the interconnection network imitates the behavior of open-drain (or open-collector) buses (e.g., those following the I2C protocol). Thus, multiple open-drain I/Os from external integrated circuits (ICs) can be connected together through the FPIN by the proposed interface circuit. The interface that has been fabricated in a 0.13 µm CMOS technology takes 65 µm × 22 µm per pin. Test results show that several instances of this interface can be interconnected through the proposed interconnect topology

Transmetteurs photoniques sur silicium pour les transmissions optiques à grande capacité

Les applications exigeant des très nombreuses données (médias sociaux, diffusion vidéo en continu, mégadonnées, etc.) se développent à un rythme rapide, ce qui nécessite de plus en plus de liaisons optiques ultra-rapides. Ceci implique le développment des transmetteurs optiques intégrés et à bas coût et plus particulirement en photonique sur silicium en raison de ses avantages par rapport aux autres technologies (LiNbO3 et InP), tel que la compatibilité avec le procédé de fabrication CMOS. Les modulateurs optoélectronique sont un élément essentiel dans la communication op-tique. Beaucoup de travaux de recherche sont consacrées au développement de dispositifs optiques haut débit efficaces. Cependant, la conception de modulateurs en photonique sur sili-cium (SiP) haut débit est diffcile, principalement en raison de l'absence d'effet électro-optique intrinsèque dans le silicium. De nouvelles approches et de architectures plus performances doivent être développées afin de satisfaire aux critères réliés au système d'une liaison optique aux paramètres de conception au niveau du dispositif integré. En outre, la co-conception de circuits integrés photoniques sur silicium et CMOS est cruciale pour atteindre tout le potentiel de la technologie de photonique sur silicium. Ainsi cette thèse aborde les défits susmentionnés. Dans notre première contribution, nous préesentons pour la première fois un émetteur phononique sur silicium PAM-4 sans utiliser un convertisseur numérique analog (DAC)qui comprend un modulateur Mach Zehnder à électrodes segmentées SiP (LES-MZM) implémenté dans un procédé photonique sur silicium générique avec jonction PN latérale et son conducteur CMOS intégré. Des débits allant jusqu'à 38 Gb/s/chnnel sont obtenus sans utili-ser un convertisseur numérique-analogique externe. Nous présentons également une nouvelle procédure de génération de délai dans le excitateur de MOS complémentaire. Un effet, un délai robuste aussi petit que 7 ps est généré entre les canaux de conduite. Dans notre deuxième contribution, nous présentons pour la première fois un nouveau fac-teur de mérite (FDM) pour les modulateurs SiP qui inclut non seulement la perte optique et l'efficacité (comme les FDMs précédents), mais aussi la bande passante électro-optique du modulateur SiP (BWEO). Ce nouveau FDM peut faire correspondre les paramètres de conception physique du modulateur SiP à ses critères de performance au niveau du système, facilitant à la fois la conception du dispositif optique et l'optimisation du système. Pour la première fois nous définissons et utilisons la pénalité de puissance du modulateur (MPP) induite par le modulateur SiP pour étudier la dégradation des performances au niveau du système induite par le modulateur SiP dans une communication à base de modulation d'amplitude d'impulsion optique. Nous avons développé l'équation pour MPP qui inclut les facteurs de limitation du modulateur (perte optique, taux d'extinction limité et limitation de la bande passante électro-optique). Enfin, dans notre troisième contribution, une nouvelle méthodologie de conception pour les modulateurs en SiP intégré à haute débit est présentée. La nouvelle approche est basée sur la minimisation de la MPP SiP en optimisant l'architecture du modulateur et le point de fonctionnement. Pour ce processus, une conception en longueur unitaire du modulateur Mach Zehnder (MZM) peut être optimisée en suivant les spécifications du procédé de fabrication et les règles de conception. Cependant, la longueur et la tension de biais du d'éphaseur doivent être optimisées ensemble (par exemple selon vitesse de transmission et format de modulation). Pour vérifier l'approche d'optimisation proposée expérimentale mont, a conçu un modulateur photonique sur silicium en phase / quadrature de phase (IQ) ciblant le format de modulation 16-QAM à 60 Gigabaud. Les résultats expérimentaux prouvent la fiabilité de la méthodologie proposée. D'ailleurs, nous avons augmenté la vitesse de transmission jusqu'à 70 Gigabaud pour tester la limite de débit au système. Une transmission de données dos à dos avec des débits binaires de plus de 233 Gigabit/s/channel est observée. Cette méthodologie de conception ouvre ainsi la voie à la conception de la prochaine génération d'émetteurs intégrés à double polarisation 400+ Gigabit/s/channel.Data-hungry applications (social media, video streaming, big data, etc.) are expanding at a fast pace, growing demand for ultra-fast optical links. This driving force reveals need for low-cost, integrated optical transmitters and pushes research in silicon photonics because of its advantages over other platforms (i.e. LiNbO3 and InP), such as compatibility with CMOS fabrication processes, the ability of on-chip polarization manipulation, and cost effciency. Electro-optic modulators are an essential component of optical communication links and immense research is dedicated to developing effcient high-bitrate devices. However, the design of high-capacity Silicon Photonics (SiP) transmitters is challenging, mainly due to lack of inherent electro-optic effect in silicon. New design methodologies and performance merits have to be developed in order to map the system-level criteria of an optical link to the design parameters in device-level. In addition, co-design of silicon photonics and CMOS integrated circuits is crucial to reveal the full potential of silicon photonics. This thesis addresses the aforementioned challenges. In our frst contribution, for the frst time we present a DAC-less PAM-4 silicon photonic transmitter that includes a SiP lumped-element segmented-electrode Mach Zehnder modula-tor (LES-MZM) implemented in a generic silicon photonic process with lateral p-n junction and its co-designed CMOS driver. Using post processing, bitrates up to 38 Gb/s/channel are achieved without using an external digital to analog converter. We also presents a novel delay generation procedure in the CMOS driver. A robust delay as small as 7 ps is generated between the driving channels. In our second contribution, for the frst time we present a new figure of merit (FOM) for SiP modulators that includes not only the optical loss and effciency (like the prior FOMs), but also the SiP modulator electro-optic bandwidth ( BWEO). This new FOM can map SiP modulator physical design parameters to its system-level performance criteria, facilitating both device design and system optimization. For the frst time we define and employ the modulator power penalty (MPP) induced by the SiP modulator to study the system level performance degradation induced by SiP modulator in an optical pulse amplitude modulation link. We develope a closed-form equation for MPP that includes the SiP modulator limiting factors (optical loss, limited extinction ratio and electro-optic bandwidth limitation). Finally in our third contribution, we present a novel design methodology for integrated high capacity SiP modulators. The new approach is based on minimizing the power penalty of a SiP modulator (MPP) by optimizing modulator design and bias point. For the given process, a unit-length design of Mach Zehnder modulator (MZM) can be optimized following the process specifications and design rules. However, the length and the bias voltage of the phase shifter must be optimized together in a system context (e.g., baud rate and modulation format). Moreover, to verify the proposed optimization approach in experiment, we design an in-phase/quadrature-phase (IQ) silicon photonic modulator targeting 16-QAM modulation format at 60 Gbaud. Experimental results proves the reliability of our proposed methodology. We further push the baud rate up to 70 Gbaud to examine the capacity boundary of the device. Back to back data transmission with bitrates more than 233 Gb/s/channel are captured. This design methodology paves the way for designing the next generation of integrated dual- polarization 400+ Gb/s/channel transmitters

Design of Low-Power NRZ/PAM-4 Wireline Transmitters

Rapid growing demand for instant multimedia access in a myriad of digital devices has pushed the need for higher bandwidth in modern communication hardwares ranging from short-reach (SR) memory/storage interfaces to long-reach (LR) data center Ethernets. At the same time, comprehensive design optimization of link system that meets the energy-efficiency is required for mobile computing and low operational cost at datacenters. This doctoral study consists of design of two low-swing wireline transmitters featuring a low-power clock distribution and 2-tap equalization in energy-efficient manners up to 20-Gb/s operation. In spite of the reduced signaling power in the voltage-mode (VM) transmit driver, the presence of the segment selection logic still diminishes the power saving benefit. The first work presents a scalable VM transmitter which offers low static power dissipation and adopts an impedance-modulated 2-tap equalizer with analog tap control, thereby obviating driver segmentation and reducing pre-driver complexity and dynamic power. Per-channel quadrature clock generation with injection-locked oscillators (ILO) allows the generation of rail-to-rail quadrature clocks. Energy efficiency is further improved with capacitively driven low-swing global clock distribution and supply scaling at lower data rates, while output eye quality is maintained at low voltages with automatic phase calibration of the local ILO-generated quarter-rate clocks. A prototype fabricated in a general purpose 65 nm CMOS process includes a 2 mm global clock distribution network and two transmitters that support an output swing range of 100-300mV with up to 12-dB of equalization. The transmitters achieve 8-16 Gb/s operation at 0.65-1.05 pJ/b energy efficiency. The second work involves a dual-mode NRZ/PAM-4 differential low-swing voltage-mode (VM) transmitter. The pulse-selected output multiplexing allows reduction of power supply and deterministic jitter caused by large on-chip parasitic inherent in the transmission-gate-based multiplexers in the earlier work. Analog impedance control replica circuits running in the background produce gate-biasing voltages that control the peaking ratio for 2-tap feed-forward equalization and PAM-4 symbol levels for high-linearity. This analog control also allows for efficient generation of the middle levels in PAM-4 operation with good linearity quantified by level separation mismatch ratio of 95%. In NRZ mode, 2-tap feedforward equalization is configurable in high-performance controlled-impedance or energy-efficient impedance-modulated settings to provide performance scalability. Analytic design consideration on dynamic power, data-rate, mismatch, and output swing brings optimal performance metric on the given technology node. The proof-of-concept prototype is verified on silicon with 65 nm CMOS process with improved performance in speed and energy-efficiency owing to double-stack NMOS transistors in the output stage. The transmitter consumes as low as 29.6mW in 20-Gb/s NRZ and 25.5mW in the 28-Gb/s PAM-4 operations

CIRCUITS AND ARCHITECTURE FOR BIO-INSPIRED AI ACCELERATORS

Technological advances in microelectronics envisioned through Moore’s law have led to powerful processors that can handle complex and computationally intensive tasks. Nonetheless, these advancements through technology scaling have come at an unfavorable cost of significantly larger power consumption, which has posed challenges for data processing centers and computers at scale. Moreover, with the emergence of mobile computing platforms constrained by power and bandwidth for distributed computing, the necessity for more energy-efficient scalable local processing has become more significant. Unconventional Compute-in-Memory architectures such as the analog winner-takes-all associative-memory and the Charge-Injection Device processor have been proposed as alternatives. Unconventional charge-based computation has been employed for neural network accelerators in the past, where impressive energy efficiency per operation has been attained in 1-bit vector-vector multiplications, and in recent work, multi-bit vector-vector multiplications. In the latter, computation was carried out by counting quanta of charge at the thermal noise limit, using packets of about 1000 electrons. These systems are neither analog nor digital in the traditional sense but employ mixed-signal circuits to count the packets of charge and hence we call them Quasi-Digital. By amortizing the energy costs of the mixed-signal encoding/decoding over compute-vectors with many elements, high energy efficiencies can be achieved. In this dissertation, I present a design framework for AI accelerators using scalable compute-in-memory architectures. On the device level, two primitive elements are designed and characterized as target computational technologies: (i) a multilevel non-volatile cell and (ii) a pseudo Dynamic Random-Access Memory (pseudo-DRAM) bit-cell. At the level of circuit description, compute-in-memory crossbars and mixed-signal circuits were designed, allowing seamless connectivity to digital controllers. At the level of data representation, both binary and stochastic-unary coding are used to compute Vector-Vector Multiplications (VMMs) at the array level. Finally, on the architectural level, two AI accelerator for data-center processing and edge computing are discussed. Both designs are scalable multi-core Systems-on-Chip (SoCs), where vector-processor arrays are tiled on a 2-layer Network-on-Chip (NoC), enabling neighbor communication and flexible compute vs. memory trade-off. General purpose Arm/RISCV co-processors provide adequate bootstrapping and system-housekeeping and a high-speed interface fabric facilitates Input/Output to main memory