Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters

We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the development of epitaxial designs. With the contribution of key parameters identified, we analyze the limitations of accumulated stress to assess the manufacturability of such designs. Optimal epitaxial designs are revealed, utilizing thin barriers, with a wide and shallow quantum well that satisfies the strained layer epitaxy constraint. We then assess the advantages to epitaxial perfection and electrical characteristics provided by devices with a narrow InAs sub-well inside a lattice-matched InGaAs alloy. These new structures will assist in the realization of the next-generation submillimeter emitters

Investigation into the integration of a resonant tunnelling diode and an optical communications laser: model and experiment

A resonant tunnelling diode has been monolithically integrated with an optical communications laser [the resonant tunnelling diode (RTD-LD)] to form a simple optoelectronic integrated circuit (OEIC) that is a novel bistable device suitable for an optical communications system. The RTD-LD was based on a ridge-waveguide laser structure and was fabricated from an InAlGaAs-InP epi-wafer grown by molecular beam epitaxy; it emitted at around 1500 nm. Voltage controlled optical-electrical switching and bistability were observed during the characterisation of the RTD-LD - useful features for a fibre-optic communications laser. Optical and electrical simulations of the RTD-LD were carried out using the circuit simulation tool PSPICE. In addition, a discrete component version of the RTD-LD was constructed which exhibited optical power oscillations, and along with the results of the simulations, gave insight into the operating principles of the monolithically integrated RTD-LD

A liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment

We report on a hybrid optoelectronic integrated circuit based on a resonant tunnelling diode driving an optical communications laser diode. This circuit can act as a voltage controlled oscillator with optical and electrical outputs. We show that the oscillator operation can be described by Liénard's equation, a second order nonlinear differential equation, which is a generalization of the Van der Pol equation. This treatment gives considerable insight into the potential of a monolithic version of the circuit for optical communication functions including clock recovery and chaotic source applications

RTD based logic circuits using generalized threshold gates

Many logic circuit applications of Resonant Tunneling Diodes are based on the MOnostable-BIstable Logic Element (MOBILE). Threshold logic is a computational model widely used in the design of MOBILE circuits, i.e. these circuits are built from threshold gates (TGs). The MOBILE realization of generalized threshold gates is being investigated. Multi-Threshold Threshold Gates (MTTGs) have been proposed which further increase the functionality of the original TGs. Recently, we have proposed a novel MOBILE circuit topology obtained by fundamental properties of threshold functions. This paper describes the design of n-bit adders using these novel MOBILE circuit topologies. A comparison with designs based on TGs and MTTGs is carried out showing advantages in terms of speed and power delay product and device counts.España, Gobierno TEC2007-67245Junta de Andalucía EXC/2007/TIC-296

Integration of a resonant tunneling diode and an optical communications laser

We report on the first integration of a resonant tunneling diode and an optical communications laser operating at around 1.5 /spl μm. We demonstrate its low-frequency bistable operation and model its electrical characteristics

THz Electronics for Data Centre Wireless Links - the TERAPOD Project

This paper presents an overview of the terahertz (THz) resonant tunneling diode (RTD) technology that will be used as one of the approaches towards wireless data centres as envisioned on the eU H2020 TERAPOD project. We show an example 480 gm × 680 gm THz source chip at 300 GHz employing a 4 gm × 4 gm RTD device with 0.15 mW output power. We also show a basic laboratory wireless setup with this device in which up to 2.5 Gbps (limited by equipment) was demonstrated

Two-phase RTD-CMOS pipelined circuits

MOnostable-BIstable Logic Element (MOBILE) networks can be operated in a gate-level pipelined fashion (nanopipeline) allowing high through output. Resonant tunneling diode (RTD)-based MOBILE nanopipelined circuits have been reported using different clock schemes including a four-phase strategy and a single-phase clock scheme. In particular, significant power advantages of single-phase RTD-CMOS MOBILE circuits over pure CMOS have been shown. This letter compares the RTD-CMOS realizations using a single clock and a novel two-phase clock solution. Significant superior robustness and performance in terms of power and area are obtained for the two-phase implementations

Symmetry-breaking transitions in networks of nonlinear circuit elements

We investigate a nonlinear circuit consisting of N tunnel diodes in series, which shows close similarities to a semiconductor superlattice or to a neural network. Each tunnel diode is modeled by a three-variable FitzHugh-Nagumo-like system. The tunnel diodes are coupled globally through a load resistor. We find complex bifurcation scenarios with symmetry-breaking transitions that generate multiple fixed points off the synchronization manifold. We show that multiply degenerate zero-eigenvalue bifurcations occur, which lead to multistable current branches, and that these bifurcations are also degenerate with a Hopf bifurcation. These predicted scenarios of multiple branches and degenerate bifurcations are also found experimentally.Comment: 32 pages, 11 figures, 7 movies available as ancillary file

Diced and grounded broadband bow-tie antenna with tuning stub for resonant tunnelling diode terahertz oscillators

Radiation from antennas integrated with indium phosphide (InP)-based resonant tunnelling diode (RTD) oscillators is mainly through the substrate because of the effects of the large dielectric constant. Therefore, hemispherical lenses are used to extract the signal from the backside of the substrate. In this study the authors present a broadband bow-tie slot antenna with a tuning stub which is diced and mounted on a ground plane to alleviate the substrate effects. Here, the large dielectric constant substrate around the antenna conductor is removed. In addition, the ground plane underneath the diced substrate acts as a reflector and, ultimately, the antenna radiates to the air-side direction. Antenna integration with RTD oscillators is described in this study as well. Two-port bow-tie slot antennas were designed and characterised and showed the suitability of integration with power combining RTD oscillator circuits which are based on mutual coupling. The antennas were fabricated using electron beam lithography on a semi-insulating InP substrate. Simulated and measured bandwidth almost extends the entire frequency range 230–325  GHz. Simulations shows air-side radiation pattern and antenna gain of around 11  dB at 280  GHz. Simulations also show that the antenna may be fed with a 50-Ω or 30-Ω feed line, i.e. suitable feed lines, without compromising its performance which may prove beneficial for optimum loading of RTD oscillators