An Efficient Gate Library for Ambipolar CNTFET Logic

Recently, several emerging technologies have been reported as potential candidates for controllable ambipolar devices. Controllable ambipolarity is a desirable property that enables the on-line configurability of n-type and p-type device polarity. In this paper, we introduce a new design methodology for logic gates based on controllable ambipolar devices, with an emphasis on carbon nanotubes as the candidate technology. Our technique results in ambipolar gates with a higher expressive power than conventional complementary metal-oxidesemiconductor (CMOS) libraries. We propose a library of static ambipolar carbon nanotube field effect transistor (CNTFET) gates based on generalized NOR-NAND-AOI-OAI primitives, which efficiently implements XOR-based functions. Technology mapping of several multi-level logic benchmarks that extensively use the XOR function, including multipliers, adders, and linear circuits, with ambipolar CNTFET logic gates indicates that on average, it is possible to reduce the number of logic levels by 42%, the delay by 26%, and the power consumption by 32%, resulting in a energy-delay-product (EDP) reduction of 59% over the same circuits mapped with unipolar CNTFET logic gates. Based on the projections in [1], where it is stated that defectfree CNTFETs will provide a 5× performance improvement over metal-oxide-semiconductor field effect transistors, the ambipolar library provides a performance improvement of 7×, a 57% reduction in power consumption, and a 20× improvement in EDP over the CMOS library

Novel Library of Logic Gates with Ambipolar CNTFETs: Opportunities for Multi-Level Logic Synthesis

This paper exploits the unique in-field controllability of the device polarity of ambipolar carbon nanotube field effect transistors (CNTFETs) to design a technology library with higher expressive power than conventional CMOS libraries. Based on generalized NOR-NAND-AOI-OAI primitives, the proposed library of static ambipolar CNTFET gates efficiently implements XOR functions, provides full-swing outputs, and is extensible to alternate forms with area-performance tradeoffs. Since the design of the gates can be regularized, the ability to functionalize them in-field opens opportunities for novel regular fabrics based on ambipolar CNTFETs. Technology mapping of several multi-level logic benchmarks — including multipliers, adders, and linear circuits — indicates that on average, it is possible to reduce both the number of gates and area by ∼ 38% while also improving performance by 6.9×

3次元型トランジスタを用いたLSIの設計法

Design technology of LSI such as system LSI ana memory using 3 dimensional transistors has been described. By using 3 dimensional transistors, FinFET, double gate transistor and stacked double gate transistor, pattern area of logic gate and full adder circuit can be reduced drastically compared with that with conventional planar transistor. By using double gate transistor and Carbon Nano Tube transistor the reconfigurable circuit with many logic functions can be realized with small pattern area. Furthermore, staked NAND MRAM with 3 dimensional spin transistor has been newly proposed. This stacked NAND MRAM is a promising candidate which replaces currently available DRAM and NAND flash memory.Design technology of LSI such as system LSI ana memory using 3 dimensional transistors has been described. By using 3 dimensional transistors, FinFET, double gate transistor and stacked double gate transistor, pattern area of logic gate and full adder circuit can be reduced drastically compared with that with conventional planar transistor. By using double gate transistor and Carbon Nano Tube transistor the reconfigurable circuit with many logic functions can be realized with small pattern area. Furthermore, staked NAND MRAM with 3 dimensional spin transistor has been newly proposed. This stacked NAND MRAM is a promising candidate which replaces currently available DRAM and NAND flash memory

Designing Universal Logic Module FPGA Architectures for Use With Ambipolar Transistor Technology

Recent publications show a rise of ambipolar transistor technology research and associated implementations of multi-function logic cells in these technologies. Special properties of these technologies enable implementations of Universal Logic Modules (ULMs) using few transistors, which draws renewed interest to use such ULMs as basic logic blocks for FPGA architectures. Unlike N-input Lookup Tables (LUTs), most ULMs only implement a fixed subset of the possible Boolean functions. In this work, we first adapt the Verilog-to-Routing (VTR) 8.0 toolflow to target such reduced-function ULM primitives. We then modify VTR\u27s flagship 40nm architecture to use an ULM primitive instead of LUTs, modeling the double-gate carbon nanotube FET 8-function logic gate CNT-DR8F published by Liu et al. Using VTR\u27s extensive benchmark framework, we analyze effects caused by the limited set of function offered by these primitives. To counter some of the observed effects, we present various clustered architectures, where multiple ULM cells are combined in a logic block. We conclude with an analysis of various parameters which affect performance of the different implementations

Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity

Asthe currentMOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the fabrication of novel ambipolar Silicon nanowire (SiNW) Schottky-barrier (SB) FET transistors featuring two independent gate-all-around electrodes and vertically stacked SiNW channels. A top-down approach was employed for the nanowire fabrication, using an e-beam lithography defined design pattern. In these transistors, one gate electrode enables the dynamic configuration of the device polarity (n- or p-type) by electrostatic doping of the channel in proximity of the source and drain SBs. The other gate electrode, acting on the center region of the channel switches ON or OFF the device. Measurement results on silicon show I-on/I-off > 10(6) and subthreshold slopes approaching the thermal limit, SS approximate to 64 mV/dec (70 mV/dec) for p(n)-type operation in the same physical device. Finally, we show that the XOR logic operation is embedded in the device characteristic, and we demonstrate for the first time a fully functional two-transistor XOR gate

Regular Fabric Design with Ambipolar CNTFETs for FPGA and Structured ASIC Applications

In this paper, we propose for the first time the application of ambipolar CNTFETs with in-field controllable polarities to design regular fabrics with static logic. We exploit the high expressive power provided by complementary static logic built with ambipolar CNTFETs to design compact and efficient configurable gates. After evaluating a polarity-aware logic design for the configurable gates, we selected a number of gates with an And-Or-Inverter structure and produced a first comparison with existent medium-grained logic blocks, like the Actel ACT1 and 4-input LUTs [1]. Preliminary evaluation of our gates indicates improvements of around 47% over the ACT1 and of about 18× with respect to 4-input LUTs in terms of area×normalized delay

Polarity Control at Runtime:from Circuit Concept to Device Fabrication

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to overcome physical limitations affecting conventional CMOS technology. Here, we propose a novel Schottky barrier device concept based on electrostatic polarity control. Specifically, this device can behave as p- or n-type by simply changing an electric input bias. This device combines More-than-Moore and Beyond CMOS elements to create an efficient technology with a viable path to Very Large Scale Integration (VLSI). This thesis proposes a device/circuit/architecture co-optimization methodology, where aspects of device technology to logic circuit and system design are considered. At device level, a full CMOS compatible fabrication process is presented. In particular, devices are demonstrated using vertically stacked, top-down fabricated silicon nanowires with gate-all-around electrode geometry. Source and drain contacts are implemented using nickel silicide to provide quasi-symmetric conduction of either electrons or holes, depending on the mode of operation. Electrical measurements confirm excellent performance, showing Ion/Ioff > 10^7 and subthreshold slopes approaching the thermal limit, SS ~ 60mV/dec (~ 63mV/dec) for n(p)-type operation in the same physical device. Moreover, the shown devices behave as p-type for a polarization bias (polarity gate voltage, Vpg) of 0V, and n-type for a Vpg = 1V, confirming their compatibility with multi-level static logic circuit design. At logic gate level, two- and four-transistor logic gates are fabricated and tested. In particular, the first fully functional, two-transistor XOR logic gate is demonstrated through electrical characterization, confirming that polarity control can enable more compact logic gate design with respect to conventional CMOS. Furthermore, we show for the first time fabricated four- transistors logic gates that can be reconfigured as NAND or XOR only depending on their external connectivity. In this case, logic gates with full swing output range are experimentally demonstrated. Finally, single device and mixed-mode TCAD simulation results show that lower Vth and more optimized polarization ranges can be expected in scaled devices implementing strain or high-k technologies. At circuit and system level, a full semi-custom logic circuit design tool flow was defined and configured. Using this flow, novel logic libraries based on standard cells or regular gate fabrics were compared with standard CMOS. In this respect, results were shown in comparison to CMOS, including a 40% normalized area-delay product reduction for the analyzed standard cell libraries, and improvements of over 2× in terms of normalized delay for regular Controlled Polarity (CP)-based cells in the context of Structured ASICs. These results, in turn, confirm the interest in further developing and optimizing CP devices, as promising candidates for future digital circuit technology