5,120 research outputs found
A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor
A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated
Quantum thermal transistor
We demonstrate that a thermal transistor can be made up with a quantum system
of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal
transistor is analogous to an electronic bipolar one with the ability to
control the thermal currents at the collector and at the emitter with the
imposed thermal current at the base. This is achieved determining the heat
fluxes by means of the strong-coupling formalism. For the case of 3 interacting
spins, in which one of them is coupled to the other 2, that are not directly
coupled, it is shown that high amplification can be obtained in a wide range of
energy parameters and temperatures. The proposed quantum transistor could, in
principle, be used to develop devices such as a thermal modulator and a thermal
amplifier in nano systems.Comment: Physical Review Letters, American Physical Society, 2016, 116,
pp.20060
GaAs optoelectronic neuron arrays
A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10^4 cm^-2 are discussed
Bipolar spintronics: From spin injection to spin-controlled logic
An impressive success of spintronic applications has been typically realized
in metal-based structures which utilize magnetoresistive effects for
substantial improvements in the performance of computer hard drives and
magnetic random access memories. Correspondingly, the theoretical understanding
of spin-polarized transport is usually limited to a metallic regime in a linear
response, which, while providing a good description for data storage and
magnetic memory devices, is not sufficient for signal processing and digital
logic. In contrast, much less is known about possible applications of
semiconductor-based spintronics and spin-polarized transport in related
structures which could utilize strong intrinsic nonlinearities in
current-voltage characteristics to implement spin-based logic. Here we discuss
the challenges for realizing a particular class of structures in semiconductor
spintronics: our proposal for bipolar spintronic devices in which carriers of
both polarities (electrons and holes) contribute to spin-charge coupling. We
formulate the theoretical framework for bipolar spin-polarized transport, and
describe several novel effects in two- and three-terminal structures which
arise from the interplay between nonequilibrium spin and equilibrium
magnetization.Comment: 16 pages, 7 figure
Large-signal charge control modeling of photoreceivers for applications up to 40 Gb/s
A charge control model was used to simulate the sensitivity and responsivity in a range of photodetector configurations including heterojunction bipolar phototransistors (HPTs), PIN-HBT, and APDs. Our simulations enabled for the first time a direct comparison of the performance between these photodetectors to be made. Simulations have been performed at bit rates from 2 to 40 Gb/s using various combinations of device design parameters (layer thickness, source resistance, and dc base voltage). For a BER = 10(-9) at 40 Gb/s the best sensitivity of approximately -20 dBm was achieved using an optimized APD-HBT configuration, followed by sensitivities of approximately -14 dBm using optimized PIN-HBTs and HPTs. These results were found to agree well with published experimental data
Broadband Tuning (170nm) of InGaAs Quantum Well Lasers
The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned
Atomtronics: ultracold atom analogs of electronic devices
Atomtronics focuses on atom analogs of electronic materials, devices and
circuits. A strongly interacting ultracold Bose gas in a lattice potential is
analogous to electrons in solid-state crystalline media. As a consequence of
the band structure, cold atoms in a lattice can exhibit insulator or conductor
properties. P-type and N-type material analogs can be created by introducing
impurity sites into the lattice. Current through an atomtronic wire is
generated by connecting the wire to an atomtronic battery which maintains the
two contacts at different chemical potentials. The design of an atomtronic
diode with a strongly asymmetric current-voltage curve exploits the existence
of superfluid and insulating regimes in the phase diagram. The atomtronic
analog of a bipolar junction transistor exhibits large negative gain. Our
results provide the building blocks for more advanced atomtronic devices and
circuits such as amplifiers, oscillators and fundamental logic gates
Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices
Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed
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