Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena

In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scaling principle. For safe switching, the required gate voltage bias is predicted to be −1.2V or less for the present IGBTs and −6V or less is required to completely cancel the gate noise voltage. From the IGBT design, the bias voltage of scaling IGBT requires −2V to completely cancel the gate noise voltage

Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally.31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019), 19-23 May 2019, Shanghai, Chin

Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction

Attention has been paid to the next-generation IGBT toward CMOS compatible wafer processes, which can be driven by a 5-V logic level due to its low threshold gate voltage. This low threshold voltage makes the so-called shoot-through fault severer. Even though the switching speed of the IGBT is intentionally reduced, the shoot-through fault can happen. This paper presents shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction. Theoretical analysis reveals the criterion of the gate impedance with taking parasitic parameters of the inverter into account

Analysis and modeling of self-turn-on phenomenon of MOS gate type power semiconductors

パワー半導体を用いたスイッチング電源やモータドライブなどの高速スイッチング回路では、急峻に立ち上がる電圧によるセルフターンオン現象が損失増大や故障の原因になっている。本研究では、従来の原因から視点を変え、スイッチング時の主回路電流によってゲート寄生インダクタンスに発生した電圧がセルフターンオンを引き起こすと仮定し、TCADシミュレーションで解析した。さらにセルフターンオンを防止する回路設計指針を示した。電子通信エネルギー技術研究会（EE）, 2021年1月25日, オンライン開

Emerging Power Electronics Technologies for Sustainable Energy Conversion

This Special Issue summarizes, in a single reference, timely emerging topics related to power electronics for sustainable energy conversion. Furthermore, at the same time, it provides the reader with valuable information related to open research opportunity niches

Emerging Power Electronics Technologies for Sustainable Energy Conversion

This Special Issue summarizes, in a single reference, timely emerging topics related to power electronics for sustainable energy conversion. Furthermore, at the same time, it provides the reader with valuable information related to open research opportunity niches

Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena

In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scaling principle. For safe switching, the required gate voltage bias is predicted to be −1.2V or less for the present IGBTs and −6V or less is required to completely cancel the gate noise voltage. From the IGBT design, the bias voltage of scaling IGBT requires −2V to completely cancel the gate noise voltage

Intelligent Circuits and Systems

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society.　 This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering