Investigating ferroelectric and metal-insulator phase transition devices for neuromorphic computing

Neuromorphic computing has been proposed to accelerate the computation for deep neural networks (DNNs). The objective of this thesis work is to investigate the ferroelectric and metal-insulator phase transition devices for neuromorphic computing. This thesis proposed and experimentally demonstrated the drain erase scheme in FeFET to enable the individual cell program/erase/inhibition for in-situ training in 3D NAND-like FeFET array. To achieve multi-level states for analog in-memory computing, the ferroelectric thin film needs to be partially switched. This thesis identified a new challenge of ferroelectric partial switching, namely “history effect” in minor loop dynamics. The experimental characterization of both FeCap and FeFET validated the history effect, suggesting that the intermediate states programming condition depends on the prior states that the device has gone through. A phase-field model was constructed to understand the origin. Such history effect was then modelled into the FeFET based neural network simulation and analyze its negative impact on the training accuracy and then propose a possible mitigation strategy. Apart from using FeFET as synaptic devices, using metal-insulator phase transition device, as neuron was also explored experimentally. A NbOx metal-insulator phase transition threshold switch was integrated at the edge of the crossbar array as an oscillation neuron. One promising application for FeFET+NbOx neuromorphic system is to implement quantum error correction (QEC) circuitry at 4K. Cryo-NeuroSim, a device-to-system modeling framework that calibrates data at cryogenic temperature was developed to benchmark the performance of the FeFET+NbOx neuromorphic system.Ph.D

In-memory computing with emerging memory devices: Status and outlook

Supporting data for "In-memory computing with emerging memory devices: status and outlook", submitted to APL Machine Learning

COMPUTE-IN-MEMORY WITH EMERGING NON-VOLATILE MEMORIES FOR ACCELERATING DEEP NEURAL NETWORKS

The objective of this research is to accelerate deep neural networks (DNNs) with emerging non-volatile memories (eNVMs) based compute-in-memory (CIM) architecture. The research first focuses on the inference acceleration and proposes a resistive random access memory (RRAM) based CIM architecture. Two generations of RRAM testchips which monolithically integrate the RRAM memory array and CMOS peripheral circuits are designed and fabricated using Winbond 90 nm and TSMC 40 nm commercial embedded RRAM process respectively. The first generation of testchip named XNOR-RRAM is dedicated for binary neural networks (BNNs) and the second generation named Flex-RRAM features 1bit-to-8bit run-time configurable precision and leverages the input sparsity of the DNN model to improve the throughput and energy efficiency. However, the non-ideal characteristics of eNVM devices, especially when utilized as multi-level analog synaptic weights, may incur a notable accuracy degradation for both training and inference. This research develops a PyTorch based framework that incorporates the device characteristics into the DNN model to evaluate the impact of the eNVM nonidealities on training/inference accuracy. The results suggest that it is challenging to directly use eNVMs for in-situ training and resistance drift remains as a critical challenge to maintain a high inference accuracy. Furthermore, to overcome the challenges posed by the asymmetric conductance tuning behavior of typical eNVMs, which is found to be the most critical nonideality that prevents the model from achieving software equivalent training accuracy, this research proposes a novel 2-transistor-1-FeFET (ferroelectric field effect transistor) based synaptic weight cell that exploits hybrid precision for in situ training and inference, which achieves near-software classification accuracy on MNIST and CIFAR-10 dataset.Ph.D

HyDe: A Hybrid PCM/FeFET/SRAM Device-search for Optimizing Area and Energy-efficiencies in Analog IMC Platforms

Today, there are a plethora of In-Memory Computing (IMC) devices- SRAMs, PCMs & FeFETs, that emulate convolutions on crossbar-arrays with high throughput. Each IMC device offers its own pros & cons during inference of Deep Neural Networks (DNNs) on crossbars in terms of area overhead, programming energy and non-idealities. A design-space exploration is, therefore, imperative to derive a hybrid-device architecture optimized for accurate DNN inference under the impact of non-idealities from multiple devices, while maintaining competitive area & energy-efficiencies. We propose a two-phase search framework (HyDe) that exploits the best of all worlds offered by multiple devices to determine an optimal hybrid-device architecture for a given DNN topology. Our hybrid models achieve upto 2.30-2.74x higher TOPS/mm^2 at 22-26% higher energy-efficiencies than baseline homogeneous models for a VGG16 DNN topology. We further propose a feasible implementation of the HyDe-derived hybrid-device architectures in the 2.5D design space using chiplets to reduce design effort and cost in the hardware fabrication involving multiple technology processes.Comment: Accepted to IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS

Adaptive extreme edge computing for wearable devices

Wearable devices are a fast-growing technology with impact on personal healthcare for both society and economy. Due to the widespread of sensors in pervasive and distributed networks, power consumption, processing speed, and system adaptation are vital in future smart wearable devices. The visioning and forecasting of how to bring computation to the edge in smart sensors have already begun, with an aspiration to provide adaptive extreme edge computing. Here, we provide a holistic view of hardware and theoretical solutions towards smart wearable devices that can provide guidance to research in this pervasive computing era. We propose various solutions for biologically plausible models for continual learning in neuromorphic computing technologies for wearable sensors. To envision this concept, we provide a systematic outline in which prospective low power and low latency scenarios of wearable sensors in neuromorphic platforms are expected. We successively describe vital potential landscapes of neuromorphic processors exploiting complementary metal-oxide semiconductors (CMOS) and emerging memory technologies (e.g. memristive devices). Furthermore, we evaluate the requirements for edge computing within wearable devices in terms of footprint, power consumption, latency, and data size. We additionally investigate the challenges beyond neuromorphic computing hardware, algorithms and devices that could impede enhancement of adaptive edge computing in smart wearable devices