CMOS Design of Reconfigurable SoC Systems for Impedance Sensor Devices

La rápida evolución en el campo de los sensores inteligentes, junto con los avances en las tecnologías de la computación y la comunicación, está revolucionando la forma en que recopilamos y analizamos datos del mundo físico para tomar decisiones, facilitando nuevas soluciones que desempeñan tareas que antes eran inconcebibles de lograr.La inclusión en un mismo dado de silicio de todos los elementos necesarios para un proceso de monitorización y actuación ha sido posible gracias a los avances en micro (y nano) electrónica. Al mismo tiempo, la evolución de las tecnologías de procesamiento y micromecanizado de superficies de silicio y otros materiales complementarios ha dado lugar al desarrollo de sensores integrados compatibles con CMOS, lo que permite la implementación de matrices de sensores de alta densidad. Así, la combinación de un sistema de adquisición basado en sensores on-Chip, junto con un microprocesador como núcleo digital donde se puede ejecutar la digitalización de señales, el procesamiento y la comunicación de datos proporciona características adicionales como reducción del coste, compacidad, portabilidad, alimentación por batería, facilidad de uso e intercambio inteligente de datos, aumentando su potencial número de aplicaciones.Esta tesis pretende profundizar en el diseño de un sistema portátil de medición de espectroscopía de impedancia de baja potencia operado por batería, basado en tecnologías microelectrónicas CMOS, que pueda integrarse con el sensor, proporcionando una implementación paralelizable sin incrementar significativamente el tamaño o el consumo, pero manteniendo las principales características de fiabilidad y sensibilidad de un instrumento de laboratorio. Esto requiere el diseño tanto de la etapa de gestión de la energía como de las diferentes celdas que conforman la interfaz, que habrán de satisfacer los requisitos de un alto rendimiento a la par que las exigentes restricciones de tamaño mínimo y bajo consumo requeridas en la monitorización portátil, características que son aún más críticas al considerar la tendencia actual hacia matrices de sensores.A nivel de celdas, se proponen diferentes circuitos en un proceso CMOS de 180 nm: un regulador de baja caída de voltaje como unidad de gestión de energía, que proporciona una alimentación de 1.8 V estable, de bajo ruido, precisa e independiente de la carga para todo el sistema; amplificadores de instrumentación con una aproximación completamente diferencial, que incluyen una etapa de entrada de voltaje/corriente configurable, ganancia programable y ancho de banda ajustable, tanto en la frecuencia de corte baja como alta; un multiplicador para conformar la demodulación dual, que está embebido en el amplificador para optimizar consumo y área; y filtros pasa baja totalmente integrados, que actúan como extractores de magnitud de DC, con frecuencias de corte ajustables desde sub-Hz hasta cientos de Hz.<br /

Design of a Low Power External Capacitor-Less Low-Dropout Regulator with Gain-Compensated Error Amplifier

This thesis introduces a gain-compensated external capacitor-less low-dropout voltage regulator with total 5.7 uA quiescent current at all load conditions. The two-stage gain-compensated error amplifier is implemented with a cross-couple pair negative resistor to make the LDO achieve higher gain (> 50 dB) with very low bias current (< 1.3 uA). The LDO can achieve 52 dB loop gain at no load condition, 64 dB at 1 mA and 54 dB at 100 mA load. During transients (0 A to 100 mA) the undershoot is optimized to 98.6 mV with 100 ns rising and falling time through a differentiator circuit to boost the LDO’s transient response. The phase margin of the proposed LDO is 55◦ at 1 mA and 79.27◦ at max load (100 mA). Figure of merit (FOM) of this work is 2.79 fs which is very small

Organic Photodiodes and Their Optoelectronic Applications

Recently, organic photodiodes (OPDs) have been acknowledged as a next-generation device for photovoltaic and image sensor applications due to their advantages of large area process, light weight, mechanical flexibility, and excellent photoresponse. This dissertation targets for the development and understanding of high performance organic photodiodes for their medical and industrial applications for the next-generation. As the first research focus, A dielectric / metal / dielectric (DMD) transparent electrode is proposed for the top-illumination OPDs. The fabricated DMD transparent electrode showed the maximum optical transmittance of 85.7 % with sheet resistance of 6.2 ohm/sq. In the second part of the thesis, a development of novel transfer process which enables the dark current suppression for the inverted OPD devices will be discussed. Through the effort, we demonstrated OPD with high D* of 4.82 x 10^12 Jones at reverse bias of 1.5 V with dark current density (Jdark) of 7.7 nA/cm2 and external quantum efficiency (EQE) of 60 %. Additionally in the third part, we investigate a high performance low-bandgap polymer OPD with broadband spectrum. By utilizing the novel transfer process to introduce charge blocking layers, significant suppression of the dark current is achieved while high EQE of the device is preserved. A low Jdark of 5 nA/cm2 at reverse bias of 0.5 V was achieved resulting in the highest D* of 1.5 x 10^13 Jones. To investigate the benefit for the various OPD applications, we developed a novel 3D printing technique to fabricate OPD on hemispherical concave substrate. The techniques allowed the direct patterning of the OPD devices on hemispherical substrates without excessive strain or deformation. Lastly, a simulation of the OPD stacked a-ITZO TFT active pixel sensor (APS) pixel with external transimpedance amplifier (TIA) readout circuit was performed.PHDElectrical & Computer Eng PhDUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/137168/1/hyunskim_1.pd

Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

A Silicon Carbide Linear Voltage Regulator for High Temperature Applications

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon\u27s, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field. This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option for developing SiC processes due to its relatively simple implementation and yet, a performance acceptable to today\u27s systems applications. This document details the challenges faced and methods needed to design and fabricate the circuit as well as measured data corroborating design simulation results

Design of a Low Power External Capacitor-Less Low-Dropout Regulator with Gain-Compensated Error Amplifier

This thesis introduces a gain-compensated external capacitor-less low-dropout voltage regulator with total 5.7 uA quiescent current at all load conditions. The two-stage gain-compensated error amplifier is implemented with a cross-couple pair negative resistor to make the LDO achieve higher gain (> 50 dB) with very low bias current (< 1.3 uA). The LDO can achieve 52 dB loop gain at no load condition, 64 dB at 1 mA and 54 dB at 100 mA load. During transients (0 A to 100 mA) the undershoot is optimized to 98.6 mV with 100 ns rising and falling time through a differentiator circuit to boost the LDO’s transient response. The phase margin of the proposed LDO is 55◦ at 1 mA and 79.27◦ at max load (100 mA). Figure of merit (FOM) of this work is 2.79 fs which is very small

Design of Analog & Mixed Signal Circuits in Continuous-Time Sigma-Delta Modulators for System-on-Chip applications

Software-defined radio receivers (SDRs) have become popular to accommodate multi-standard wireless services using a single chip-set solution in mobile telecommunication systems. In SDRs, the signal is down-converted to an intermediate frequency and then digitalized. This approach relaxes the specifications for most of the analog front-end building blocks by performing most of the signal processing in the digital domain. However, since the analog-to-digital converter (ADC) is located as close as possible to the antenna in SDR architectures, the ADC specification requirements are very stringent because a large amount of interference signals are present at the ADC input due to the removal of filtering blocks, which particularly affects the dynamic range (DR) specification. Sigma-delta (ΣΔ) ADCs have several benefits such as low implementation cost, especially when the architecture contains mostly digital circuits. Furthermore, continuous-time (CT) ΣΔ ADCs allow elimination of the anti‐aliasing filter because input signals are sampled after the integrator. The bandwidth requirements for the amplifiers in CT ΣΔ ADCs can be relaxed due to the continuous operation without stringing settling time requirements. Therefore, they are suitable for high‐speed and low‐power applications. In addition, CT ΣΔ ADCs achieve high resolution due to the ΣΔ modulator’s noise shaping property. However, the in-band quantization noise is shaped by the analog loop filter and the distortions of the analog loop filter directly affect the system output. Hence, highly linear low-noise loop filters are required for high-performance ΣΔ modulators. The first task in this research focused on using CMOS 90 nm technology to design and fabricate a 5^(TH)–order active-RC loop filter with a cutoff frequency of 20 MHz for a low pass (LP) CT ΣΔ modulator. The active-RC topology was selected because of the high DR requirement in SDR applications. The amplifiers in the first stage of the loop filter were implemented with linearization techniques employing anti-parallel cancellation and source degeneration in the second stage of the amplifiers. These techniques improve the third-order intermodulation (IM3) by approximately 10 dB; while noise, area, and power consumption do not increase by more than 10%. Second, a current-mode adder-flash ADC was also fabricated as part of a LP CT ΣΔ modulator. The new current-mode operation developed through this research makes possible a 53% power reduction. The new technology also lessens existing problems associated with voltage-mode flash ADCs, which are mainly related to voltage headroom restrictions, speed of operation, offsets, and power efficiency of the latches. The core of the current-mode adder-flash ADC was fabricated in CMOS 90 nm technology with 1.2 V supply; it dissipates 3.34 mW while operating at 1.48 GHz and consumes a die area of 0.0276 mm^(2). System-on chip (SoC) solutions are becoming more popular in mobile telecommunication systems to improve the portability and competitiveness of products. Since the analog/RF and digital blocks often share the same external power supply in SoC solutions, the on-chip generation of clean power supplies is necessary to avoid system performance degradation due to supply noises. Finally, the critical design issues for external capacitor-less low drop-out (LDO) regulators for SoC applications are addressed in this dissertation, especially the challenges related to power supply rejection at high frequencies as well as loop stability and transient response. The paths of the power supply noise to the LDO output were analyzed, and a power supply noise cancellation circuit was developed. The power supply rejection (PSR) performance was improved by using a replica circuit that tracks the main supply noise under process-voltage-temperature variations and all operating conditions. Fabricated in a 0.18 μm CMOS technology with 1.8 V supply, the entire proposed LDO consumes 55 μA of quiescent current while in standby operation, and it has a drop-out voltage of 200 mV when providing 50 mA to the load. Its active core chip area is 0.14 mm2. Compared to a conventional uncompensated LDO, the proposed architecture presents a PSR improvement of 34 dB and 25 dB at 1 MHz and 4 MHz, respectively

Propuesta de arquitectura y circuitos para la mejora del rango dinámico de sistemas de visión en un chip diseñados en tecnologías CMOS profundamente submicrométrica

El trabajo presentado en esta tesis trata de proponer nuevas técnicas para la expansión del rango dinámico en sensores electrónicos de imagen. En este caso, hemos dirigido nuestros estudios hacia la posibilidad de proveer dicha funcionalidad en un solo chip. Esto es, sin necesitar ningún soporte externo de hardware o software, formando un tipo de sistema denominado Sistema de Visión en un Chip (VSoC). El rango dinámico de los sensores electrónicos de imagen se define como el cociente entre la máxima y la mínima iluminación medible. Para mejorar este factor surgen dos opciones. La primera, reducir la mínima luz medible mediante la disminución del ruido en el sensor de imagen. La segunda, incrementar la máxima luz medible mediante la extensión del límite de saturación del sensor. Cronológicamente, nuestra primera opción para mejorar el rango dinámico se basó en reducir el ruido. Varias opciones se pueden tomar para mejorar la figura de mérito de ruido del sistema: reducir el ruido usando una tecnología CIS o usar circuitos dedicados, tales como calibración o auto cero. Sin embargo, el uso de técnicas de circuitos implica limitaciones, las cuales sólo pueden ser resueltas mediante el uso de tecnologías no estándar que están especialmente diseñadas para este propósito. La tecnología CIS utilizada está dirigida a la mejora de la calidad y las posibilidades del proceso de fotosensado, tales como sensibilidad, ruido, permitir imagen a color, etcétera. Para estudiar las características de la tecnología en más detalle, se diseñó un chip de test, lo cual permite extraer las mejores opciones para futuros píxeles. No obstante, a pesar de un satisfactorio comportamiento general, las medidas referentes al rango dinámico indicaron que la mejora de este mediante sólo tecnología CIS es muy limitada. Es decir, la mejora de la corriente oscura del sensor no es suficiente para nuestro propósito. Para una mayor mejora del rango dinámico se deben incluir circuitos dentro del píxel. No obstante, las tecnologías CIS usualmente no permiten nada más que transistores NMOS al lado del fotosensor, lo cual implica una seria restricción en el circuito a usar. Como resultado, el diseño de un sensor de imagen con mejora del rango dinámico en tecnologías CIS fue desestimado en favor del uso de una tecnología estándar, la cual da más flexibilidad al diseño del píxel. En tecnologías estándar, es posible introducir una alta funcionalidad usando circuitos dentro del píxel, lo cual permite técnicas avanzadas para extender el límite de saturación de los sensores de imagen. Para este objetivo surgen dos opciones: adquisición lineal o compresiva. Si se realiza una adquisición lineal, se generarán una gran cantidad de datos por cada píxel. Como ejemplo, si el rango dinámico de la escena es de 120dB al menos se necesitarían 20-bits/píxel, log2(10120/20)=19.93, para la representación binaria de este rango dinámico. Esto necesitaría de amplios recursos para procesar esta gran cantidad de datos, y un gran ancho de banda para moverlos al circuito de procesamiento. Para evitar estos problemas, los sensores de imagen de alto rango dinámico usualmente optan por utilizar una adquisición compresiva de la luz. Por lo tanto, esto implica dos tareas a realizar: la captura y la compresión de la imagen. La captura de la imagen se realiza a nivel de píxel, en el dispositivo fotosensor, mientras que la compresión de la imagen puede ser realizada a nivel de píxel, de sistema, o mediante postprocesado externo. Usando el postprocesado, existe un campo de investigación que estudia la compresión de escenas de alto rango dinámico mientras se mantienen los detalles, produciendo un resultado apropiado para la percepción humana en monitores convencionales de bajo rango dinámico. Esto se denomina Mapeo de Tonos (Tone Mapping) y usualmente emplea solo 8-bits/píxel para las representaciones de imágenes, ya que éste es el estándar para las imágenes de bajo rango dinámico. Los píxeles de adquisición compresiva, por su parte, realizan una compresión que no es dependiente de la escena de alto rango dinámico a capturar, lo cual implica una baja compresión o pérdida de detalles y contraste. Para evitar estas desventajas, en este trabajo, se presenta un píxel de adquisición compresiva que aplica una técnica de mapeo de tonos que permite la captura de imágenes ya comprimidas de una forma optimizada para mantener los detalles y el contraste, produciendo una cantidad muy reducida de datos. Las técnicas de mapeo de tonos ejecutan normalmente postprocesamiento mediante software en un ordenador sobre imágenes capturadas sin compresión, las cuales contienen una gran cantidad de datos. Estas técnicas han pertenecido tradicionalmente al campo de los gráficos por ordenador debido a la gran cantidad de esfuerzo computacional que requieren. Sin embargo, hemos desarrollado un nuevo algoritmo de mapeo de tonos especialmente adaptado para aprovechar los circuitos dentro del píxel y que requiere un reducido esfuerzo de computación fuera de la matriz de píxeles, lo cual permite el desarrollo de un sistema de visión en un solo chip. El nuevo algoritmo de mapeo de tonos, el cual es un concepto matemático que puede ser simulado mediante software, se ha implementado también en un chip. Sin embargo, para esta implementación hardware en un chip son necesarias algunas adaptaciones y técnicas avanzadas de diseño, que constituyen en sí mismas otra de las contribuciones de este trabajo. Más aún, debido a la nueva funcionalidad, se han desarrollado modificaciones de los típicos métodos a usar para la caracterización y captura de imágenes