Mechanical modelling of high power lateral IGBT for LED driver applications

An assembly exercise was proposed to replace the vertical MOSFET by lateral IGBTs (LIGBT) for LED driver systems which can provide significant advantages in terms of size reduction (LIGBTs are ten times smaller than vertical MOSFETs) and lower component count. A 6 circle, 5V gate, 800 V LIGBT device with dimension of 818μm x 672μm with deposited solder balls that has a radius of around 75μm was selected in this assembly exercise. The driver system uses chip on board (COB) technique to create a compact driver system which can fit into a GU10 bulb housing. The challenging aspect of the LIGBT package in high voltage application is underfill dielectric breakdown and solder fatigue failure. In order to predict the extreme electric field values of the underfill, an electrostatic finite element analysis was undertaken on the LIGBT package structure for various underfill permittivity values. From the electro static finite element analysis, the maximum electric field in the underfill was estimated as 38 V/μm. Five commercial underfills were selected for investigating the trade-off in materials properties that mitigate underfill electrical breakdown and solder joint fatigue failure. These selected underfills have dielectric breakdown higher than the predicted value from electrostatic analysis. The thermo-mechanical finite element analysis were undertaken for solder bump reliability for all the underfill materials. The underfill which can enhance the solder reliability was chosen as prime candidate

Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables

An effort to design and build a prototype LED driver system which is energy efficient, highly compact and with few component count was initiated by a consortium UK universities. The prototype system will be based on Silicon Lateral IGBT (LIGBT) device combined with chip on board technology. Part of this effort, finite element modelling and analysis were undertaken in order to mitigate the underfill dielectric breakdown failure and solder interconnect fatigue failure of the LIGBT package structure. Electro-static analysis was undertaken to predict the extreme electric field distribution in the underfill. Based on electro-static analysis, five commercial underfill were selected for thermo-mechanical finite element analysis on solder joint fatigue failure prediction under cyclic loading. A design optimisation analysis was endeavoured to maximise the solder interconnect reliability by utilising a computer model with continuous variable (physical dimensions) and discrete variables underfill type) and a stochastic optimiser such as multi-objective mixed discrete particle swarm optimisation. From the optimisation analysis best trade off solution are obtained