Speeding up liquid crystal SLMs using overdrive with phase change reduction

Nematic liquid crystal spatial light modulators (SLMs) with fast switching times and high diffraction efficiency are important to various applications ranging from optical beam steering and adaptive optics to optical tweezers. Here we demonstrate the great benefits that can be derived in terms of speed enhancement without loss of diffraction efficiency from two mutually compatible approaches. The first technique involves the idea of overdrive, that is the calculation of intermediate patterns to speed up the transition to the target phase pattern. The second concerns optimization of the target pattern to reduce the required phase change applied to each pixel, which in addition leads to a substantial reduction of variations in the intensity of the diffracted light during the transition. When these methods are applied together, we observe transition times for the diffracted light fields of about 1 ms, which represents up to a tenfold improvement over current approaches. We experimentally demonstrate the improvements of the approach for applications such as holographic image projection, beam steering and switching, and real-time control loops

Liquid-Crystal Blazed-Grating Beam Deflector

A transmission-type nonmechanical multiple-angle beam-steering device that uses liquid-crystal blazed grating has been developed. Sixteen steering angles with a contrast ratio of 18 has been demonstrated. A detailed analysis of the liquid-crystal and poly(methyl methacrylate) blazed-grating deflector was carried out to provide guidance during the deflector’s development. A manufacturing offset compensation technique is proposed to improve the device’s performance greatly. A hybrid approach utilizing electrically generated blazed grating combined with the cascading approach described here yields in excess of 500 deflecting angles

Liquid Crystal on Silicon Devices: Modeling and Advanced Spatial Light Modulation Applications

Liquid Crystal on Silicon (LCoS) has become one of the most widespread technologies for spatial light modulation in optics and photonics applications. These reflective microdisplays are composed of a high-performance silicon complementary metal oxide semiconductor (CMOS) backplane, which controls the light-modulating properties of the liquid crystal layer. State-of-the-art LCoS microdisplays may exhibit a very small pixel pitch (below 4 ?m), a very large number of pixels (resolutions larger than 4K), and high fill factors (larger than 90%). They modulate illumination sources covering the UV, visible, and far IR. LCoS are used not only as displays but also as polarization, amplitude, and phase-only spatial light modulators, where they achieve full phase modulation. Due to their excellent modulating properties and high degree of flexibility, they are found in all sorts of spatial light modulation applications, such as in LCOS-based display systems for augmented and virtual reality, true holographic displays, digital holography, diffractive optical elements, superresolution optical systems, beam-steering devices, holographic optical traps, and quantum optical computing. In order to fulfil the requirements in this extensive range of applications, specific models and characterization techniques are proposed. These devices may exhibit a number of degradation effects such as interpixel cross-talk and fringing field, and time flicker, which may also depend on the analog or digital backplane of the corresponding LCoS device. The use of appropriate characterization and compensation techniques is then necessary

Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C.

III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)-coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III-Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics