2 research outputs found

    MCML D-Latch Using Triple-Tail Cells: Analysis and Design

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    A new low-voltage MOS current mode logic (MCML) topology for D-latch is proposed. The new topology employs a triple-tail cell to lower the supply voltage requirement in comparison to traditional MCML D-latch. The design of the proposed MCML D-latch is carried out through analytical modeling of its static parameters. The delay is expressed in terms of the bias current and the voltage swing so that it can be traded off with the power consumption. The proposed low-voltage MCML D-latch is analyzed for the two design cases, namely, high-speed and power-efficient, and the performance is compared with the traditional MCML D-latch for each design case. The theoretical propositions are validated through extensive SPICE simulations using TSMC 0.18 µm CMOS technology parameters

    Design of low-voltage power efficient frequency dividers in folded MOS current mode logic

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    In this paper we propose a methodology to design high-speed, power-efficient static frequency dividers based on the low-voltage Folded MOS Current Mode Logic (FMCML) approach. A modeling strategy to analyze the dependence of propagation delay and power consumption on the bias currents of the divide-by-2 (DIV2) cell is introduced. We demonstrate that the behavior of the FMCML DIV2 cell is different both from the one of the conventional MCML DFF (D-type Flip-Flop) and from FMCML DFF without a level shifter. Then an analytical strategy to optimize the divider in different design scenarios: maximum speed, minimum power-delay product (PDP) or minimum energy-delay product (EDP) is presented. The possibility to scale the bias currents through the divider stages without affecting the speed performance is also investigated. The proposed analytical approach allows to gain a deep insight into the circuit behavior and to comprehensively optimize the different design tradeoffs. The derived models and design guidelines are validated against transistor level simulations referring to a commercial 28nm FDSOI CMOS process. Different divide-by-8 circuits following different optimization strategies have been designed in the same 28nm CMOS technology showing the effectiveness of the proposed methodology
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