FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of 433.80 μV/mA and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of 1 μs. The total current consumption is 17.88 μA (for a 0.9 V supply voltage).Ministerio de Economía y Competitividad TEC2015-71072-C3-3-RConsejería de Economía, Innovación y Ciencia. Junta de Andalucía P12-TIC-186

Quasi-digital low-dropout voltage regulators uses controlled pass transistors

This article presents a low quiescent current output capacitorless quasi-digital CMOS LDO regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is broken up to two smaller sizes based on a breakup criterion defined here, which considers the maximum output voltage variations to different load current steps to find the suitable current boundary for breaking up. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Therefore, using one smaller transistor for low load currents, and another one larger for higher currents, is the best trade-off between output variations, complexity, and power dissipation. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.35 µm CMOS process to supply a load current between 0-100 mA while consumes 7.6 µA quiescent current. The results reveal 46% and 69% improvement on the output voltage variations and settling time, respectively.Postprint (published version

Quasi–digital low–dropout voltage regulators uses controlled pass transistors

This article presents a low quiescent current outputcapacitorless quasi-digital CMOS LDO regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is broken up to two smaller sizes based on a breakup criterion defined here, which considers the maximum output voltage variations to different load current steps to find the suitable current boundary for breaking up. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Therefore, using one smaller transistor for low load currents, and another one larger for higher currents, is the best trade-off between output variations, complexity, and power dissipation. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.35 µm CMOS process to supply a load current between 0-100 mA while consumes 7.6 µA quiescent current. The results reveal 46% and 69% improvement on the output voltage variations and settling time, respectively.Postprint (published version

Output-Capacitorless CMOS LDO Regulator Based on High Slew-Rate Current-Mode Transconductance Amplifier

A low quiescent current output-capacitorless CMOS LDO regulator based on a high slew-rate current-mode transconductance amplifier (CTA) as an error amplifier is presented. Load transient characteristic of the proposed LDO is improved even at low quiescent currents, by using a local common-mode feedback (LCMFB) in the proposed CTA. This provides an increase in the order of transfer characteristic of the circuit, thereby enhancing the slew-rate at the gate of pass transistor. The proposed CTA-based LDO topology has been designed and post-layout simulated in HSPICE, in a 0.18 μm CMOS process to supply a load current between 0-100 mA. Postlayout simulation results reveal that the proposed LDO is stable without any internal compensation strategy and with on-chip output capacitor or lumped parasitic capacitances at the output node between 10-100 pF.Postprint (published version

Design consideration in low dropout voltage regulator for batteryless power management unit

Harvesting energy from ambient Radio Frequency (RF) source is a great deal toward batteryless Internet of Thing (IoT) System on Chip (SoC) application as green technology has become a future interest. However, the harvested energy is unregulated thus it is highly susceptible to noise and cannot be used efficiently. Therefore, a dedicated low noise and high Power Supply Ripple Rejection (PSRR) of Low Dropout (LDO) voltage regulator are needed in the later stages of system development to supply the desired load voltage. Detailed analysis of the noise and PSRR of an LDO is not sufficient. This work presents a design of LDO to generate a regulated output voltage of 1.8V from 3.3V input supply targeted for 120mA load application. The performance of LDO is evaluated and analyzed. The PSRR and noise in LDO have been investigated by applying a low-pass filter. The proposed design achieves the design specification through the simulation results by obtaining 90.85dB of open-loop gain, 76.39º of phase margin and 63.46dB of PSRR respectively. The post-layout simulation shows degradation of gain and maximum load current due to parasitic issue. The measurement of maximum load regulation is dropped to 96mA compared 140mA from post-layout. The proposed LDO is designed using 180nm Silterra CMOS process technology

STUDY OF FULLY-INTEGRATED LOW-DROPOUT REGULATORS

Department of Electrical EngineeringThis thesis focuses on the introduction of fully-integrated low-dropout regulators (LDOs). Recently, for the mobile and internet-of-things applications, the level of integration is getting higher. LDOs get popular in integrated circuit design including functions such as reducing switching ripples from high-efficiency regulators, cancelling spurs from other loads, and giving different supply voltages to loads. In accordance with load applications, choosing proper LDOs is important. LDOs can be classified by the types of power MOSEFT, the topologies of error amplifier, and the locations of dominant pole. Analog loads such as voltage-controlled oscillators and analog-to-digital converters need LDOs that have high power-supply-rejection-ratio (PSRR), high accuracy, and low noise. Digital loads such as DRAM and CPU need fast transient response, a wide range of load current providable LDOs. As an example, we present the design procedure of a fully-integrated LDO that obtains the desired PSRR. In analog LDOs, we discuss advanced techniques such as local positive feedback loop and zero path that can improve stability and PSRR performance. In digital LDOs, the techniques to improve transient response are introduced. In analog-digital hybrid LDOs, to achieve both fast transient and high PSRR performance in a fully-integrated chip, how to optimally combine analog and digital LDOs is considered based on the characteristics of each LDO type. The future work is extracted from the considerations and limitations of conventional techniques.clos

Output-capacitorless segmented low-dropout voltage regulator with controlled pass transistors

This article presents a low quiescent current output-capacitorless quasi-digital complementary metal-oxide-semiconductor (CMOS) low-dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade-off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.18¿µm CMOS process to supply a stable load current between 0 and 100¿mA with a 40¿pF on-chip output capacitor, while consuming 4.8¿µA quiescent current. The dropout voltage of the LDO is set to 200¿mV for 1.8¿V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively.Peer ReviewedPostprint (author's final draft

Diseño de circuitos electrónicos de ultra-bajo consumo en tecnologías nanométricas

El escalado de los procesos de fabricación de semiconductores, predicho por el Dr. Moore en los años sesenta, ha tenido un gran impacto en el desarrollo de la electrónica integrada actual. Por una parte, la reducción del tamaño de los transistores ha permitido incrementar la densidad de integración, dando la posibilidad a los diseñadores de introducir un mayor número de funcionalidades dentro de una misma área. Por otro lado, este fenómeno ha llevado consigo una reducción de los costes asociados a la fabricación, logrando abaratar el producto final. Esta continua evolución e incremento de la funcionalidad dentro de un mismo circuito integrado, implica, a su vez, un aumento de la complejidad a la hora de planificar la generación y distribución de las distintas tensiones de alimentación, necesarias para cada uno de los bloques incluidos en el chip. Esto provoca que las especificaciones de ruido, regulación y/o estabilidad asociadas a cada dominio de alimentación varíen según la naturaleza del sistema al que se pretende alimentar. Por esta razón, los circuitos destinados a la gestión de la potencia han tomado una mayor relevancia en los últimos años, puesto que las restricciones impuestas por los sistemas integrados son cada vez mayores. Dentro de los circuitos destinados a la gestión de potencia, los reguladores lineales y, en concreto, los de bajo dropout se corresponden con un bloque básico, ya que permiten la generación de tensiones de alimentación muy estables, precisas y de bajo ruido. Estas características los convierten en el circuito ideal para alimentar a sistemas analógicos o de radio-frecuencia, muy sensibles a variaciones de la alimentación. Otra característica de estos bloques, que ha provocado el creciente interés de la comunidad científica en ellos, es la posibilidad de poder integrarlos sin necesidad de incluir ningún dispositivo externo, con el consecuente ahorro económico y de área en la tarjeta impresa. Sin embargo, dentro de los inconvenientes cabe destacar dos. Por una parte, la eficiencia máxima teórica que pueden lograr es baja frente a soluciones basadas en capacidades conmutadas o inductores. Por otro lado, al buscarse un esquema de compensación interna, el polo dominante del sistema viene fijado por un nodo interno del circuito, provocando que el polo no-dominante esté dominado por la carga. Esto se traduce en un gran problema de estabilidad, debido a que las variaciones que sufre la carga se traducen en un desplazamiento en frecuencia del polo no dominante, degradando el margen de fase de todo el sistema. Según lo descrito anteriormente, esta investigación se ha centrado en el estudio de reguladores lineales de tipo Low-DropOut o LDO compensados internamente y sus propiedades, dada la problemática de este tipo de celdas cuando se busca minimizar su consumo quiescente. Para ello, uno de los objetivos marcados versa sobre la búsqueda de topologías alternativas que permitan el diseño de LDOs de altas prestaciones, sin suponer un incremento del consumo quiescente y que sean válidos para entornos de baja tensión de alimentación. En este sentido, se ha apostado por el uso de la celda Flipped Voltage Follower como regulador debido a su baja impendancia de salida, gran estabilidad y sencillez. Una segunda línea, se ha centrado en la búsqueda de esquemas de compensación simples que permitan extender la estabilidad de este tipo de regulador en todo el rango de funcionamiento. Para ello, se ha explorado un esquema basado en la compensación clásica de Miller donde se ha utilizado un esquema de replica para ajustar de forma dinámica el valor de la resistencia según la carga del sistema. Por último, con el objetivo de minimizar lo máximo posible el consumo quiescente de los reguladores LDOs sin degradar las prestaciones de la respuesta transitoria, se ha explorado el uso de buffers clase AB para gestionar la puerta del transistor de paso. Esta técnica permite mejorar la respuesta transitoria, al ser capaz de crear corrientes elevadas durante las transiciones sin necesidad de penalizar la eficiencia del regulador.The continuous downscaling of semiconductor fabrication processes, which was predicted by PhD. Moore in 1965, have had a great impact in the development of nowadays integrated electronics. The reduction of transistor size has allowed, on one hand, the integration of more devices in the same área, increasing the integration density, while, on the other hand, has led to the reduction of fabrication costs, making the final product cheaper and accessible. However, this increase in the functionality of a single integrated circuit entails greater complexity in the generation and distribution of the different biasing voltages needed throughout one chip. Thus, as more different systems are integrated in the same chip, more different biasing domains coexists in it, leading several different requirements of noise, regulation and/or stability that need to be satisfied simultaneously. Therefore, power management circuits have been acquiring greater significance as technology downscales, reaching its maximum nowadays, when the nanoscale had taken those issues to its culmen. Linear regulators, and more concretely, low-dropout linear regulators, are an essential block in any power management system, able to generate precise and extremely-stable low-noise biasing voltages what make them the ideal choice for extremely biasing-sensitive circuits such as analog or radio-frequency systems. In addition to this, low-dropout linear regulators can be completely integrated without needing any external device, what translates to expenses and area savings. For all these reasons, low-dropout linear regulators have been lately acquiring extensive attention from the scientific community. However, those circuits also have some disadvantages, indeed, the maximum theoretical efficiency that can be achieved though low-dropout linear regulators is lower than switched capacitor or inductor-based solutions efficiency. In addition to this, as internal compensation is required, the system’s dominant pole is given by an internal node, making the non-dominant pole to be fixed by the charge. This leads to a great stability concern as charge variations translate to a frequency displacement of the non-dominant pole that degrades the whole system phase margin. In accordance with previously described issues, this research has been focused on the study of minimum-quiescent consumption internally compensated low-dropout linear regulators (LDO). The first objective of this research is the proposal of low-voltage high-performance LDO structures that do not increase quiescent consumption. Thus, the Flipped Voltage Follower cell has been proposed as regulator due to its inherent low output impedance, great stability and simplicity. The second aim of this research has been the proposal of simple compensation schemes that allow full-operation range stability. So that, a classical Miller compensation based scheme where a replica circuit dynamically adjust the charge resistance has been proposed. Finally, in order to minimize quiescent consumption of LDOs regulators without degrading transient response performance, class-AB buffers have been proposed to drive the pass transistor gate. This technique enhances the transient response as it generates high currents during transitions without compromising efficiency.Premio Extraordinario de Doctorado U

CMOS Design of Reconfigurable SoC Systems for Impedance Sensor Devices

La rápida evolución en el campo de los sensores inteligentes, junto con los avances en las tecnologías de la computación y la comunicación, está revolucionando la forma en que recopilamos y analizamos datos del mundo físico para tomar decisiones, facilitando nuevas soluciones que desempeñan tareas que antes eran inconcebibles de lograr.La inclusión en un mismo dado de silicio de todos los elementos necesarios para un proceso de monitorización y actuación ha sido posible gracias a los avances en micro (y nano) electrónica. Al mismo tiempo, la evolución de las tecnologías de procesamiento y micromecanizado de superficies de silicio y otros materiales complementarios ha dado lugar al desarrollo de sensores integrados compatibles con CMOS, lo que permite la implementación de matrices de sensores de alta densidad. Así, la combinación de un sistema de adquisición basado en sensores on-Chip, junto con un microprocesador como núcleo digital donde se puede ejecutar la digitalización de señales, el procesamiento y la comunicación de datos proporciona características adicionales como reducción del coste, compacidad, portabilidad, alimentación por batería, facilidad de uso e intercambio inteligente de datos, aumentando su potencial número de aplicaciones.Esta tesis pretende profundizar en el diseño de un sistema portátil de medición de espectroscopía de impedancia de baja potencia operado por batería, basado en tecnologías microelectrónicas CMOS, que pueda integrarse con el sensor, proporcionando una implementación paralelizable sin incrementar significativamente el tamaño o el consumo, pero manteniendo las principales características de fiabilidad y sensibilidad de un instrumento de laboratorio. Esto requiere el diseño tanto de la etapa de gestión de la energía como de las diferentes celdas que conforman la interfaz, que habrán de satisfacer los requisitos de un alto rendimiento a la par que las exigentes restricciones de tamaño mínimo y bajo consumo requeridas en la monitorización portátil, características que son aún más críticas al considerar la tendencia actual hacia matrices de sensores.A nivel de celdas, se proponen diferentes circuitos en un proceso CMOS de 180 nm: un regulador de baja caída de voltaje como unidad de gestión de energía, que proporciona una alimentación de 1.8 V estable, de bajo ruido, precisa e independiente de la carga para todo el sistema; amplificadores de instrumentación con una aproximación completamente diferencial, que incluyen una etapa de entrada de voltaje/corriente configurable, ganancia programable y ancho de banda ajustable, tanto en la frecuencia de corte baja como alta; un multiplicador para conformar la demodulación dual, que está embebido en el amplificador para optimizar consumo y área; y filtros pasa baja totalmente integrados, que actúan como extractores de magnitud de DC, con frecuencias de corte ajustables desde sub-Hz hasta cientos de Hz.<br /