A novel traveling-wave-based method improved by unsupervised learning for fault location of power cables via sheath current monitoring

In order to improve the practice in maintenance of power cables, this paper proposes a novel traveling-wave-based fault location method improved by unsupervised learning. The improvement mainly lies in the identification of the arrival time of the traveling wave. The proposed approach consists of four steps: (1) The traveling wave associated with the sheath currents of the cables are grouped in a matrix; (2) the use of dimensionality reduction by t-SNE (t-distributed Stochastic Neighbor Embedding) to reconstruct the matrix features in a low dimension; (3) application of the DBSCAN (density-based spatial clustering of applications with noise) clustering to cluster the sample points by the closeness of the sample distribution; (4) the arrival time of the traveling wave can be identified by searching for the maximum slope point of the non-noise cluster with the fewest samples. Simulations and calculations have been carried out for both HV (high voltage) and MV (medium voltage) cables. Results indicate that the arrival time of the traveling wave can be identified for both HV cables and MV cables with/without noise, and the method is suitable with few random time errors of the recorded data. A lab-based experiment was carried out to validate the proposed method and helped to prove the effectiveness of the clustering and the fault location

Improving practical sensitivity of energy optimized wake-up receivers: proof of concept in 65nm CMOS

We present a high performance low-power digital base-band architecture, specially designed for an energy optimized duty-cycled wake-up receiver scheme. Based on a careful wake-up beacon design, a structured wake-up beacon detection technique leads to an architecture that compensates for the implementation loss of a low-power wake-up receiver front-end at low energy and area costs. Design parameters are selected by energy optimization and the architecture is easily scalable to support various network sizes. Fabricated in 65nm CMOS, the digital base-band consumes 0.9uW (V_DD=0.37V) in sub-threshold operation at 250kbps, with appropriate 97% wake-up beacon detection and 0.04% false alarm probabilities. The circuit is fully functional at a minimum V_DD of 0.23V at f_max=5kHz and 0.018uW power consumption. Based on these results we show that our digital base-band can be used as a companion to compensate for front-end implementation losses resulting from the limited wake-up receiver power budget at a negligible cost. This implies an improvement of the practical sensitivity of the wake-up receiver, compared to what is traditionally reported.Comment: Submitted to IEEE Sensors Journa

An Ultrasonic Sensor for Distance Measurement in Automotive Applications

This paper describes an ultrasonic sensor that is able to measure the distance from the ground of selected points of a motor vehicle. The sensor is based on the measurement of the time of flight of an ultrasonic pulse, which is reflected by the ground. A constrained optimization technique is employed to obtain reflected pulses that are easily detectable by means of a threshold comparator. Such a technique, which takes the frequency response of the ultrasonic transducers into account, allows a sub-wavelength detection to be obtained. Experimental tests, performed with a 40 kHz piezoelectric-transducer based sensor, showed a standard uncertainty of 1 mm at rest or at low speeds; the sensor still works at speeds of up to 30 m/s, although at higher uncertainty. The sensor is composed of only low cost components, thus being apt for first car equipment in many cases, and is able to self-adapt to different conditions in order to give the best result

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraph-signal noise induced by trapping and detrapping of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FET.Comment: To be published in IEEE Trans. Nanotechno

Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation

Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines the minimum-energy operation point of 2T and 3T1D e-DRAM gain cells at the 32-nm technology node with different design points: up-sizing transistors, using high- V th transistors, read/write wordline assists; as well as operating conditions (i.e., temperature). First, the e-DRAM cells are evaluated without considering any process variations. Then, a full-factorial statistical analysis of e-DRAM cells is performed in the presence of threshold voltage variations and the effect of upsizing on mean MEP is reported. Finally, it is shown that the product of the read and write lengths provides a knob to tradeoff energy-efficiency for reliable MEP energy operation.Peer ReviewedPostprint (author's final draft