Civil Space Technology Initiative: a First Step

This is the first published overview of OAST's focused program, the Civil Space Technology Initiative, (CSTI) which started in FY88. This publication describes the goals, technical approach, current status, and plans for CSTI. Periodic updates are planned

Advanced space system concepts and their orbital support needs (1980 - 2000). Volume 2: Final report

The results are presented of a study which identifies over 100 new and highly capable space systems for the 1980-2000 time period: civilian systems which could bring benefits to large numbers of average citizens in everyday life, much enhance the kinds and levels of public services, increase the economic motivation for industrial investment in space, expand scientific horizons; and, in the military area, systems which could materially alter current concepts of tactical and strategic engagements. The requirements for space transportation, orbital support, and technology for these systems are derived, and those requirements likely to be shared between NASA and the DoD in the time period identified. The high leverage technologies for the time period are identified as very large microwave antennas and optics, high energy power subsystems, high precision and high power lasers, microelectronic circuit complexes and data processors, mosaic solid state sensing devices, and long-life cryogenic refrigerators

Light Management in III-V Thin-Film Photovoltaics and Micro-LEDs

Light management is essential to improve the performance of optoelectronic devices as they depend on the interaction between photons and device design. This research demonstrates novel approaches to enhance the light absorption in thin-film III-V photovoltaics (PV) and light emission from micrometer-scale light-emitting diodes (μLED). The high power conversion efficiency (PCE) realized in III-V PV makes them attractive power generation sources, especially for off-the-grid space-related missions. Thin-film PV (\u3c 1 μm) offer great tolerance towards the inevitable radiation damage in the space environment as carrier collection is maintained compared to their optically thick counterparts (3-5 μm). To combat transmission loss of photons traveling through the thinned device, this work develops textured back surface reflectors (BSR) to increase the optical path length (OPL) of unabsorbed photons to generate electron-hole pairs. The textures are created via etching techniques and epitaxial regrowth and are characterized by surface imaging and reflectance (R) measurements. The textured BSR with high diffuse R increase the OPL, and the best-known design demonstrates over a four-fold increase in the OPL, which is two times greater than the planar BSR. This research delivers new analyses useful to the PV community, including the lifetime enhancement factor and free-carrier absorption modeling, which aim to improve the PCE in thin-film PV. Modern display technology is constantly integrated into daily use to convey information and connect people worldwide. The next generation of wearable devices requires small-featured displays to achieve high resolution. The μLED delivers value to near-eye displays through low power consumption, long lifetime, high contrast, and increased resolution. As these devices reduce in size, surface states limit the light output power (LOP) at the roughened sidewalls, and the perimeter-to-area ratio must be considered. This research focuses on developing a fabrication process that improves LOP through sidewall treatments. The dry etch process is optimized to reduce surface roughness, and sidewall treatments via wet-chemical etching, in situ etching, and regrowth aim to improve the sidewall quality. Scanning electron microscopy on the LED sidewalls supports the optimized fabrication process. Luminescence characterization reveals that combinations of etching and regrowth suppress non-radiative recombination events. These techniques render pathways to enhance LOP in LEDs smaller than 25 μm x 25 μm

Vertical cavity surface emitting laser based on GaAs/air-gap distributed Bragg reflectors: from concept to working devices

textVertical-cavity surface-emitting lasers (VCSELs) have created new opportunities in optoelectronics. However, VCSELs have so far been commercialized mainly for operation at 0.85 µm, despite their potential importance at other wavelengths, such as 1.3 µm and 1.55 µm. The limitations at these longer wavelengths come from material characteristics, such as a low contrast ratio in mirror materials, lower mirror reflectivity, and smaller optical gain for longer wavelength materials versus AlGaAs/GaAs quantum wells. A similar situation, insufficient gain relative to the cavity loss, existed in the past for shorter wavelength VCSELs before high quality epitaxial mirrors were developed. Semiconductor/air-gap Distributed Bragg Reflectors (DBRs) are attractive due to their high index contrast, which leads to a high reflectivity, wide stop band and low optical loss mirror with a small number of pairs. This concept is ready to be integrated into material systems other than AlGaAs/GaAs, which is studied in this work. Therefore, the impact of these DBRs can be extended into both visible and longer infrared wavelengths as a solution to the trade-off between DBR and active region materials. Air-gap DBRs can also be used as basic building blocks of micro-opto-electro-mechanical systems (MOEMS). The high Q microcavity formed by the air-gap DBRs also provide a good platform for microcavity physics study. Air-gap DBRs are modeled using the transmission matrix formulae of the Maxwell equations. A comparison to existing DBR technology shows the great advantage and potential that the air-gap DBR possesses. Two types of air-gap are proposed and developed. The first one includes multiple GaAs/air pairs while the second one combines a single air-gap with metal and dielectric mirrors. New device structures and processing designs, especially an all-epitaxial lateral current and optical confinement technique, are carried out to incorporate air-gap DBRs into VCSEL structures. The first VCSEL based on a GaAs/air-gap DBR is successfully demonstrated. Low threshold continuous-wave lasing is achieved at room temperature. The device characteristics and air-gap DBR loss are analyzed based on experimental data.Electrical and Computer Engineerin

The QUIET Instrument

The Q/U Imaging ExperimenT (QUIET) is designed to measure polarization in the Cosmic Microwave Background, targeting the imprint of inflationary gravitational waves at large angular scales (~ 1 degree). Between 2008 October and 2010 December, two independent receiver arrays were deployed sequentially on a 1.4 m side-fed Dragonian telescope. The polarimeters which form the focal planes use a highly compact design based on High Electron Mobility Transistors (HEMTs) that provides simultaneous measurements of the Stokes parameters Q, U, and I in a single module. The 17-element Q-band polarimeter array, with a central frequency of 43.1 GHz, has the best sensitivity (69 uK sqrt(s)) and the lowest instrumental systematic errors ever achieved in this band, contributing to the tensor-to-scalar ratio at r < 0.1. The 84-element W-band polarimeter array has a sensitivity of 87 uK sqrt(s) at a central frequency of 94.5 GHz. It has the lowest systematic errors to date, contributing at r < 0.01. The two arrays together cover multipoles in the range l= 25-975. These are the largest HEMT-based arrays deployed to date. This article describes the design, calibration, performance of, and sources of systematic error for the instrument

Silicon based microcavity enhanced light emitting diodes

Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si-diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1% [1]. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1 MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitranparent distributed Bragg reflector (DBR) on the top; b) 5:5 MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5:5 MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.:List of Abbreviations and Symbols 1 Introduction and motivation 2 Theory 2.1 Electronic band structure of semiconductors 2.2 Light emitting diodes (LED) 2.2.1 History of LED 2.2.2 Mechanisms of light emission 2.2.3 Electrical properties of LED 2.2.4 LED e ciency 2.3 Si based light emitters 2.4 Microcavity enhanced light emitting pn-diode 2.4.1 Bragg reflectors 2.4.2 Fabry-Perot resonators 2.4.3 Optical mode density and emission enhancement in coplanar Fabry-Perot resonator 2.4.4 Design and optical properties of a Si microcavity LED 3 Preparation and characterisation methods 3.1 Preparation techniques 3.1.1 Thermal oxidation of silicon 3.1.2 Photolithography 3.1.3 Wet chemical cleaning and etching 3.1.4 Ion implantation 3.1.5 Plasma Enhanced Chemical Vapour Deposition (PECVD) of silicon nitride 3.1.6 Magnetron sputter deposition 3.2 Characterization techniques 3.2.1 Variable Angle Spectroscopic Ellipsometry (VASE) 3.2.2 Fourier Transform Infrared Spectroscopy (FTIR) 3.2.3 Microscopy 3.2.4 Electroluminescence and photoluminescence measurements 4 Experiments, results and discussion 4.1 Used substrates 4.1.1 Silicon substrates 4.1.2 Silicon-On-Insulator (SOI) substrates 4.2 Fabrication and characterization of distributed Bragg reflectors 4.2.1 Deposition and characterization of SiO2 4.2.2 Deposition of Si 4.2.3 Distributed Bragg Reflectors (DBR) 4.2.4 Conclusions 4.3 Design of Si pn-junction LED 4.4 Resonant microcavity LED with CoSi2 bottom mirror 4.4.1 Device preparation 4.4.2 Electrical Si diode characteristics 4.4.3 EL spectra 4.4.4 Conclusions 4.5 Si based microcavity LED with two DBRs 4.5.1 Test device 4.5.2 Device fabrication 4.5.3 LED on SOI versus MCLED 4.5.4 Conclusions 5 Summary and outlook 5.1 Summary 5.2 Outlook A Appendix A.1 The parametrization of optical constants A.1.1 Kramers-Kronig relations A.1.2 Forouhi-Bloomer dispersion formula A.1.3 Tauc-Lorentz dispersion formula A.1.4 Sellmeier dispersion formula A.2 Wafer holder List of publications Acknowledgements Declaration / Versicherun

Laser space rendezvous and docking system study continuation

Investigations were made of a configuration for a spaceborne laser radar (ladar) to meet the requirements for rendezvous and docking with a cooperative object in synchronous orbit. An analysis was completed of laser phase locking techniques, while experimental verification was made of pulse repetition frequency and resonant scanning control loops. Data measurements on a satellite mock-up were also made. The investigation supports the original contention that a rendezvous and docking ladar can be configured to offer a cost effective and reliable solution to envisioned space missions