Architectures and Integrated Circuits for Efficient, High-power "Digital'' Transmitters for Millimeter-wave Applications

This thesis presents architectures and integrated circuits for the implementation of energy-efficient, high-power "digital'' transmitters to realize high-speed long-haul links at millimeter-wave frequencies in nano-scale silicon-based processes

Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

Blocker Tolerant Radio Architectures

Future radio platforms have to be inexpensive and deal with a variety of co- existence issues. The technology trend during the last few years is towards system- on-chip (SoC) that is able to process multiple standards re-using most of the digital resources. A major bottle-neck to this approach is the co-existence of these standards operating at different frequency bands that are hitting the receiver front-end. So the current research is focused on the power, area and performance optimization of various circuit building blocks of a radio for current and incoming standards. Firstly, a linearization technique for low noise amplifiers (LNAs) called, Robust Derivative Superposition (RDS) method is proposed. RDS technique is insensitive to Process Voltage and Temperature (P.V.T.) variations and is validated with two low noise transconductance amplifier (LNTA) designs in 0.18µm CMOS technology. Measurement results from 5 dies of a resistive terminated LNTA shows that the pro- posed method improves IM3 over 20dB for input power up to -18dBm, and improves IIP_(3) by 10dB. A 2V inductor-less broadband 0.3 to 2.8GHz balun-LNTA employing the proposed RDS linearization technique was designed and measured. It achieves noise figure of 6.5dB, IIP3 of 16.8dBm, and P1dB of 0.5dBm having a power consumption of 14.2mW. The balun LNTA occupies an active area of 0.06mm2. Secondly, the design of two high linearity, inductor-less, broadband LNTAs employing noise and distortion cancellation techniques is presented. Main design issues and the performance trade-offs of the circuits are discussed. In the fully differential architecture, the first LNTA covers 0.1-2GHz bandwidth and achieves a minimum noise figure (NFmin) of 3dB, IIP_(3) of 10dBm and a P_(1dB) of 0dBm while dissipating 30.2mW. The 2^(nd) low power bulk driven LNTA with 16mW power consumption achieves NFmin of 3.4dB, IIP3 of 11dBm and 0.1-3GHz bandwidth. Each LNTA occupy an active area of 0.06mm2 in 45nm CMOS. Thirdly, a continuous-time low-pass ∆ΣADC equipped with design techniques to provide robustness against loop saturation due to blockers is presented. Loop over- load detection and correction is employed to improve the ADC’s tolerance to blockers; a fast overload detector activates the input attenuator, maintaining the ADC in linear operation. To further improve ADC’s blocker tolerance, a minimally-invasive integrated low-pass filter that reduces the most critical adjacent/alternate channel blockers is implemented. An ADC prototype is implemented in a 90nm CMOS technology and experimentally it achieves 69dB dynamic range over a 20MHz bandwidth with a sampling frequency of 500MHz and 17.1mW of power consumption. The alternate channel blocker tolerance at the most critical frequency is as high as -5.5dBFS while the conventional feed-forward modulator becomes unstable at -23.5dBFS of blocker power. The proposed blocker rejection techniques are minimally-invasive and take less than 0.3µsec to settle after a strong agile blocker appears. Finally, a new radio partitioning methodology that gives robust analog and mixed signal radio development in scaled technology for SoC integration, and the co-design of RF FEM-antenna system is presented. Based on the proposed methodology, a CMOS RF front-end module (FEM) with power amplifier (PA), LNA and transmit/receive switch, co-designed with antenna is implemented. The RF FEM circuit is implemented in a 32nm CMOS technology. Post extracted simulations show a noise figure < 2.5dB, S_(21) of 14dB, IIP3 of 7dBm and P1dB of -8dBm for the receiver. Total power consumption of the receiver is 11.8mW from a 1V supply. On the trans- mitter side, PA achieves peak RF output power of 22.34dBm with peak power added efficiency (PAE) of 65% and PAE of 33% with linearization at -6dB power back off. Simulations show an efficiency of 80% for the miniaturized dipole antenna

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology

Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning applications has increased the demand of MEMS-based digital microphones. Mobile devices have several microphones enabling noise canceling, acoustic beamforming and speech recognition. With the development of machine learning applications the interest to integrate sensors with neural networks has increased. This has driven the interest to develop digital microphones in nanometer CMOS nodes where the microphone analog-front end and digital processing, potentially including neural networks, is integrated on the same chip. Traditionally, analog-to-digital converters (ADCs) in digital microphones have been implemented using high order Sigma-Delta modulators. The most common technique to implement these high order Sigma-Selta modulators is switchedcapacitor CMOS circuits. Recently, to reduce power consumption and make them more suitable for tasks that require always-on operation, such as keyword recognition, switched-capacitor circuits have been improved using inverter-based operational amplifier integrators. Alternatively, switched-capacitor based Sigma- Delta modulators have been replaced by continuous time Sigma-Delta converters. Nevertheless, in both implementations the input signal is voltage encoded across the modulator, making the integration in smaller CMOS nodes more challenging due to the reduced voltage supply. An alternative technique consists on encoding the input signal on time (or frequency) instead of voltage. This is what time-encoded converters do. Lately, time-encoding converters have gained popularity as they are more suitable to nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs). VCO-ADCs can be implemented using CMOS inverter based ring oscillators (RO) and digital circuitry. They also show noise-shaping properties. This makes them a very interesting alternative for implementation of ADCs in nanometer CMOS nodes. Nevertheless, two main circuit impairments are present in VCO-ADCs, and both come from the oscillator non-idealities. The first of them is the oscillator phase noise, that reduces the resolution of the ADC. The second is the non-linear tuning curve of the oscillator, that results in harmonic distortion at medium to high input amplitudes. In this thesis we analyze the use of time encoding ADCs for MEMS microphones with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations for the noise transfer function (NTF) of a third order sigma-delta using a second order filter and the NSQ are presented. Secondly, we move our attention to the topic of RO-ADCs. We present a high dynamic range MEMS microphone 130nm CMOS chip based on an open-loop VCO-ADC. This dissertation shows the implementation of the analog front-end that includes the oscillator and the MEMS interface, with a focus on achieving low power consumption with low noise and a high dynamic range. The digital circuitry is left to be explained by the coauthor of the chip in his dissertation. The chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5% at 128 dBSPL with a power consumption of 438μW. After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement an unsampled feedback loop around the oscillator. The objective is to reduce distortion. Additionally phase noise mitigation is achieved. A first topology including an operational amplifier to increase the loop gain is analyzed. The design is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR with an analog power consumption of 600μW. A second topology without the operational amplifier is also analyzed. Two chips are designed with this topology. The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto- digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a power consumption of 482μW. The second chip includes only the oscillator and is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog power consumption is 153μW. To finish this thesis, two circuits that use an FDR with a ring oscillator are presented. The first is a capacity-to-digital converter (CDC). The second is a filter made with an FDR and an oscillator intended for voice activity detection tasks (VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de machine-learning han aumentado la demanda de micrófonos digitales basados en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación de ruido, el beamforming o conformación de haces y el reconocimiento de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde el front-end analógico y el procesamiento digital del micrófono, que puede incluir redes neuronales, está integrado en el mismo chip. Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos digitales han sido implementados utilizando moduladores Sigma-Delta de orden elevado. La técnica más común para implementar estos moduladores Sigma- Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente, para reducir el consumo de potencia y hacerlos más adecuados para las tareas que requieren una operación continua, como el reconocimiento de palabras clave, los convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con el uso de integradores implementados con amplificadores operacionales basados en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas han sido reemplazados por moduladores en tiempo continuo. No obstante, en ambas implementaciones, la señal de entrada es codificada en voltaje durante el proceso de conversión, lo que hace que la integración en nodos CMOS más pequeños sea complicada debido a la menor tensión de alimentación. Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación temporal. Recientemente, los convertidores de codificación temporal han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos que los convertidores Sigma-Delta. Entre los que más interés han despertado encontramos los ADCs basados en osciladores controlados por tensión (VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo (RO) implementados con inversores CMOS y circuitos digitales. Esta familia de convertidores también tiene conformado de ruido. Esto los convierte en una alternativa muy interesante para la implementación de convertidores en nodos CMOS nanométricos. Sin embargo, dos problemas principales están presentes en este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no lineal del oscilador, lo que causa distorsión a amplitudes medias y altas. En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos MEMS, con especial interés en ADCS basados en osciladores de anillo (RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador agrega un orden adicional de conformado de ruido al modulador, mejorando la resolución. En este documento se explica el cuantificador y obtienen las ecuaciones para la función de transferencia de ruido (NTF) de un sigma-delta de tercer orden usando un filtro de segundo orden y el NSQ. En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos el chip de un micrófono MEMS de alto rango dinámico en CMOS de 130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación del front-end analógico que incluye el oscilador y la interfaz con el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La descripción del back-end digital se deja para la tesis del couator del chip. La SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD de 1,5% a 128 dBSPL y un consumo de potencia de 438μW. Finalmente, se analiza el uso de una resistencia dependiente de frecuencia (FDR) para implementar un bucle de realimentación no muestreado alrededor del oscilador. El objetivo es reducir la distorsión. Además, también se logra la mitigación del ruido de fase del oscilador. Se analyza una primera topologia de realimentación incluyendo un amplificador operacional para incrementar la ganancia de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador operacional. Se fabrican y miden dos chips diseñados con esta topologia. El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de 76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el el consumo de potencia analógica es de 153μW. Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador en anillo. El primero es un convertidor de capacidad a digital (CDC). El segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout

CMOS MESFET Cascode Amplifiers for RFIC Applications

abstract: There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

The design of active resistors and transductors in a CMOS technology

Merged with duplicate record 10026.1/2618 on 07.20.2017 by CS (TIS)This thesis surveys linearisation techniques for implementing monolithic MOS active resistors and transconductors, and investigates the design of linear tunable resistors and transconductors. Improving linearity and tunability in the presence of non-ideal factors such as bulk modulation, mobility-degradation effects and mismatch of transistors is a principal objective. A family of new non-saturation-mode resistors and two novel saturation-mode transconductors are developed. Where possible, approximate analytical expressions are derived to explain the principles of operation. Performance comparisons of the new structures are made with other well-known circuits and their relative advantages and disadvantages evaluated. Experimental and simulation results are presented which validate the proposed linearisation techniques. It is shown that the proposed family of resistors offers improved linearity whilst the transconductors combine extended tunability with low distortion. Continuous-time filter examples are given to demonstrate the potential of these circuits for application in analogue signal-processing tasks.GEC Plessey Semiconductors, Plymout