The curvelet transform for image denoising

We describe approximate digital implementations of two new mathematical transforms, namely, the ridgelet transform and the curvelet transform. Our implementations offer exact reconstruction, stability against perturbations, ease of implementation, and low computational complexity. A central tool is Fourier-domain computation of an approximate digital Radon transform. We introduce a very simple interpolation in the Fourier space which takes Cartesian samples and yields samples on a rectopolar grid, which is a pseudo-polar sampling set based on a concentric squares geometry. Despite the crudeness of our interpolation, the visual performance is surprisingly good. Our ridgelet transform applies to the Radon transform a special overcomplete wavelet pyramid whose wavelets have compact support in the frequency domain. Our curvelet transform uses our ridgelet transform as a component step, and implements curvelet subbands using a filter bank of a` trous wavelet filters. Our philosophy throughout is that transforms should be overcomplete, rather than critically sampled. We apply these digital transforms to the denoising of some standard images embedded in white noise. In the tests reported here, simple thresholding of the curvelet coefficients is very competitive with "state of the art" techniques based on wavelets, including thresholding of decimated or undecimated wavelet transforms and also including tree-based Bayesian posterior mean methods. Moreover, the curvelet reconstructions exhibit higher perceptual quality than wavelet-based reconstructions, offering visually sharper images and, in particular, higher quality recovery of edges and of faint linear and curvilinear features. Existing theory for curvelet and ridgelet transforms suggests that these new approaches can outperform wavelet methods in certain image reconstruction problems. The empirical results reported here are in encouraging agreement

Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscienc

Electronic states and optical properties of quantum well heterostructures with strain and electric field effects

The aim of this work was to develop an envelope function method to calculate the electronic states and optical properties of complex quantum well heterostructures, and to demonstrate its effectiveness by application to some device structures of topical interest. In particular, structures have been considered which might form the basis of intensity modulators and polarization insensitive amplifier devices for light at a wavelength of 1.55 µm. The modulator structures considered all have the general form of two coupled quantum wells of different widths as the active region. The application of an electric field in the growth direction is intended to result in a shift in the energy and spatial localisation of the confined states and produce an increase in the absorption coefficient at longer wavelengths than the zero field absorption edge. The effectiveness of certain structures is examined in terms of field induced absorption increase at 1.55 µm. A system which shows a significant increase in absorption coefficient at this wavelength on application of a practical electric field has been identified as a possible candidate for an intensity modulator. In the case of the amplifier, the active region of the most promising structure considered consists of a stepped well which comprises two layers, one with tensile and one with compressive strain. It is known that the presence of the two oppositely strained layers can result in the TE and TM gain peaks appearing at similar photon energies. Our calculations show that a suitable choice of strain and layer widths can result in a small or zero difference between the TE and TM gains at 1.55 µm, which can be important for the polarization insensitive operation of devices in optical communications applications. In order to predict the optical properties of quantum well devices it is necessary to calculate the electron and hole states for a range of in-plane wavevectors. The calculations developed and carried out in this work are based on a multi-layer (eight band) k.p model including strain effects. The interfacial boundary conditions which result from approximations to Burt's exact envelope function theory are included in the model. The effect of an electric field is modelled by including a potential energy term in each layer Hamiltonian which is equal to the average energy shift across the layer in question due to the presence of the field. The model has been developed with flexibility in mind and has applications beyond the specific devices considered in this thesis

Fractal image compression and the self-affinity assumption : a stochastic signal modelling perspective

Bibliography: p. 208-225.Fractal image compression is a comparatively new technique which has gained considerable attention in the popular technical press, and more recently in the research literature. The most significant advantages claimed are high reconstruction quality at low coding rates, rapid decoding, and "resolution independence" in the sense that an encoded image may be decoded at a higher resolution than the original. While many of the claims published in the popular technical press are clearly extravagant, it appears from the rapidly growing body of published research that fractal image compression is capable of performance comparable with that of other techniques enjoying the benefit of a considerably more robust theoretical foundation. . So called because of the similarities between the form of image representation and a mechanism widely used in generating deterministic fractal images, fractal compression represents an image by the parameters of a set of affine transforms on image blocks under which the image is approximately invariant. Although the conditions imposed on these transforms may be shown to be sufficient to guarantee that an approximation of the original image can be reconstructed, there is no obvious theoretical reason to expect this to represent an efficient representation for image coding purposes. The usual analogy with vector quantisation, in which each image is considered to be represented in terms of code vectors extracted from the image itself is instructive, but transforms the fundamental problem into one of understanding why this construction results in an efficient codebook. The signal property required for such a codebook to be effective, termed "self-affinity", is poorly understood. A stochastic signal model based examination of this property is the primary contribution of this dissertation. The most significant findings (subject to some important restrictions} are that "self-affinity" is not a natural consequence of common statistical assumptions but requires particular conditions which are inadequately characterised by second order statistics, and that "natural" images are only marginally "self-affine", to the extent that fractal image compression is effective, but not more so than comparable standard vector quantisation techniques

Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems

This article gives an,overview of the microscopic theory,theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum-well systems are presented. Detailed theory experiment comparisons are shown and it is analyze how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and nonradiative Auger recombination are evaluated microscopically. The results are used for realistic simulations of vertical-external-cavity surface-emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre-computed microscopic scattering and dephasing rates. Prominent deviations from quasi-equilibrium carrier distributions are obtained under strong in-well pumping conditions