Hydrogen-assisted stabilization of Ni nanowires in solution

We have studied conductance characteristics of mechanically fabricated Ni nanoconstrictions under controlling electrochemical potential and pH of the electrolyte. Conductance histogram showed clear feature peaked at 1-1.5 $G_{0}$ (=$2e^{2}/h$) when the potential of the constriction was kept at more negative potential than -900 mV vs. Ag/AgCl in pH=3.7. Comparable feature also appeared at more positive potential when lower pH solution was used. We have revealed that Ni mono atomic contact or mono atomic wire can be stabilized in solution at room temperature under the hydrogen evolution.Comment: 4 pages, 3 figures; to appear in Appl. Phys. Let

Brian and Christie, Inc. v. Leishman Elec. Clerk\u27s Record v. 2 Dckt. 35929

https://digitalcommons.law.uidaho.edu/idaho_supreme_court_record_briefs/3389/thumbnail.jp

Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy

Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot memory device was fabricated in this opened area by the selective-area metal-organic vapor phase epitaxy. Drain current measurement by sweeping the gate voltage forward and backward showed clear hysteresis up to 180 K due to electrons charging into the quantum dots with a threshold voltage difference (△Vth) of 165 mV at 20 K and 29 mV at 180 K. Comparison of experimental △Vth values with the theoretically calculated ones showed that around 300 and 50 electrons were responsible for the memory operation at 20 and 180 K, respectively. Real time measurements showed that the write/erase states of the memory device were discriminated for more than 5 min at 20 K and about 100 s at 77 K

A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy

We demonstrate single-electron operation of a 1 bit adder circuit using GaAs single-electron tunneling transistors (SETs). GaAs dot and wire coupled structures for the fabrication of SETs were grown by a selective-area metalorganic vapor-phase epitaxy technique. The logic circuit was realized based on a binary decision diagram architecture using Coulomb blockade (CB) in GaAs dots and switching operations were achieved in a single-electron mode because of the CB effects. Through this architecture, a 1 bit adder circuit was realized with three SETs, two of which were for AND logic and one with two input gates for exclusive OR (XOR). Both AND and XOR operations were demonstrated at 1.9 K, which indicated successful fabrication of the 1 bit adder

Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs/AlGaAs core-shell structures. Microphotoluminescence measurements of GaAs and GaAs/AlGaAs core-shell nanowires reveal an enhancement of photoluminescence intensity in GaAs/AlGaAs core-shell structures. Based on these core-shell nanowires, AlGaAs nanotubes were formed by using anisotropic dry etching and wet chemical preferential etching to confirm the formation of a core-shell structure and to explore a new class of materials