An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model

Yield Model Characterization For Analog Integrated Circuit Using Pareto-Optimal Surface

A novel technique is proposed in this paper that achieves a yield optimized design from a set of optimal performance points on the Pareto front. Trade-offs among performance functions are explored through multi-objective optimization and Monte Carlo simulation is used to find the design point producing the best overall yield. One advantage of the approach presented is a reduction in the computational cost normally associated with Monte Carlo simulation. The technique offers a yield optimized robust circuit design solution with transistor level accuracy. An example using an OTA is presented to demonstrate the effectiveness of the work

Transistor-Level Synthesis of Pipeline Analog-to-Digital Converters Using a Design-Space Reduction Algorithm

A novel transistor-level synthesis procedure for pipeline ADCs is presented. This procedure is able to directly map high-level converter specifications onto transistor sizes and biasing conditions. It is based on the combination of behavioral models for performance evaluation, optimization routines to minimize the power and area consumption of the circuit solution, and an algorithm to efficiently constraint the converter design space. This algorithm precludes the cost of lengthy bottom-up verifications and speeds up the synthesis task. The approach is herein demonstrated via the design of a 0.13 μm CMOS 10 bits@60 MS/s pipeline ADC with energy consumption per conversion of only 0.54 pJ@1 MHz, making it one of the most energy-efficient 10-bit video-rate pipeline ADCs reported to date. The computational cost of this design is of only 25 min of CPU time, and includes the evaluation of 13 different pipeline architectures potentially feasible for the targeted specifications. The optimum design derived from the synthesis procedure has been fine tuned to support PVT variations, laid out together with other auxiliary blocks, and fabricated. The experimental results show a power consumption of 23 [email protected] V and an effective resolution of 9.47-bit@1 MHz. Bearing in mind that no specific power reduction strategy has been applied; the mentioned results confirm the reliability of the proposed approach.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

Multilevel Power Estimation Of VLSI Circuits Using Efficient Algorithms

New and complex systems are being implemented using highly advanced Electronic Design Automation (EDA) tools. As the complexity increases day by day, the dissipation of power has emerged as one of the very important design constraints. Now low power designs are not only used in small size applications like cell phones and handheld devices but also in high-performance computing applications. Embedded memories have been used extensively in modern SOC designs. In order to estimate the power consumption of the entire design correctly, an accurate memory power model is needed. However, the memory power model commonly used in commercial EDA tools is too simple to estimate the power consumption accurately. For complex digital circuits, building their power models is a popular approach to estimate their power consumption without detailed circuit information. In the literature, most of power models are built with lookup tables. However, building the power models with lookup tables may become infeasible for large circuits because the table size would increase exponentially to meet the accuracy requirement. This thesis involves two parts. In first part it uses the Synopsys power measurement tools together with the use of synthesis and extraction tools to determine power consumed by various macros at different levels of abstraction including the Register Transfer Level (RTL), the gate and the transistor level. In general, it can be concluded that as the level of abstraction goes down the accuracy of power measurement increases depending on the tool used. In second part a novel power modeling approach for complex circuits by using neural networks to learn the relationship between power dissipation and input/output characteristic vector during simulation has been developed. Our neural power model has very low complexity such that this power model can be used for complex circuits. Using such a simple structure, the neural power models can still have high accuracy because they can automatically consider the non-linear power distributions. Unlike the power characterization process in traditional approaches, our characterization process is very simple and straightforward. More importantly, using the neural power model for power estimation does not require any transistor-level or gate-level description of the circuits. The experimental results have shown that the estimations are accurate and efficient for different test sequences with wide range of input distributions

Multi-port Memory Design for Advanced Computer Architectures

In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters. Multi-porting is essential for caches and shared-data systems, especially multi-core System-on-chips (SOC). It can significantly increase the memory access throughput. We evaluate FinFET voltage-mode multi-port SRAM cells using different metrics including leakage current, static noise margin and read/write performance. Simulation results show that single-ended multi-port FinFET SRAMs with isolated read ports offer improved read stability and flexibility over classical double-ended structures at the expense of write performance. By increasing the size of the access transistors, we show that the single-ended multi-port structures can achieve equivalent write performance to the classical double-ended multi-port structure for 9% area overhead. Moreover, compared with CMOS SRAM, FinFET SRAM has better stability and standby power. We also describe new methods for the design of FinFET current-mode multi-port SRAM cells. Current-mode SRAMs avoid the full-swing of the bitline, reducing dynamic power and access time. However, that comes at the cost of voltage drop, which compromises stability. The design proposed in this thesis utilizes the feature of Independent Gate (IG) mode FinFET, which can leverage threshold voltage by controlling the back gate voltage, to merge two transistors into one through high-Vt and low-Vt transistors. This design not only reduces the voltage drop, but it also reduces the area in multi-port current-mode SRAM design. For off-chip memory, we propose a novel two-port 1-read, 1-write (1R1W) phasechange memory (PCM) cell, which significantly reduces the probability of blocking at the bank levels. Different from the traditional PCM cell, the access transistors are at the top and connected to the bitline. We use Verilog-A to model the behavior of Ge2Sb2Te5 (GST: the storage component). We evaluate the performance of the two-port cell by transistor sizing and voltage pumping. Simulation results show that pMOS transistor is more practical than nMOS transistor as the access device when both area and power are considered. The estimated area overhead is 1.7�, compared to single-port PCM cell. In brief, the contribution we make in this thesis is that we propose and evaluate three different kinds of multi-port memories that are favorable for advanced computer architectures