High Performance LNAs and Mixers for Direct Conversion Receivers in BiCMOS and CMOS Technologies

The trend in cellular chipset design today is to incorporate support for a larger number of frequency bands for each new chipset generation. If the chipset also supports receiver diversity two low noise amplifiers (LNAs) are required for each frequency band. This is however associated with an increase of off-chip components, i.e. matching components for the LNA inputs, as well as complex routing of the RF input signals. If balanced LNAs are implemented the routing complexity is further increased. The first presented work in this thesis is a novel multiband low noise single ended LNA and mixer architecture. The mixer has a novel feedback loop suppressing both second order distortion as well as DC-offset. The performance, verified by Monte Carlo simulations, is sufficient for a WCDMA application. The second presented work is a single ended multiband LNA with programmable integrated matching. The LNA is connected to an on-chip tunable balun generating differential RF signals for a differential mixer. The combination of the narrow band input matching and narrow band balun of the presented LNA is beneficial for suppressing third harmonic downconversion of a WLAN interferer. The single ended architecture has great advantages regarding PCB routing of the RF input signals but is on the other hand more sensitive to common mode interferers, e.g. ground, supply and substrate noise. An analysis of direct conversion receiver requirements is presented together with an overview of different LNA and mixer architectures in both BiCMOS and CMOS technology

A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0 dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

Equalization of Third-Order Intermodulation Products in Wideband Direct Conversion Receivers

This paper reports a SAW-less direct-conversion receiver which utilizes a mixed-signal feedforward path to regenerate and adaptively cancel IM3 products, thus accomplishing system-level linearization. The receiver system performance is dominated by a custom integrated RF front end implemented in 130-nm CMOS and achieves an uncorrected out-of-band IIP3 of -7.1 dBm under the worst-case UMTS FDD Region 1 blocking specifications. Under IM3 equalization, the receiver achieves an effective IIP3 of +5.3 dBm and meets the UMTS BER sensitivity requirement with 3.7 dB of margin

SiGe Millimeter-Wave (W-Band) Down-Converter for Phased Focal Plane Array

A millimeter-wave (W-Band) down-converter for Phased Focal Plane Arrays (PFPAs) has been designed and fabricated using the IBM Silicon-Germanium (SiGe) BiCMOS 8HP process technology. The radio frequency (RF) input range of the down-converter chip is from 70 95GHz. The intermediate frequency (IF) range is from 5 30GHz. The local oscillator (LO) frequency is fixed at 65GHz. The down-converter chip has been designed to achieve a conversion gain greater than 20dB, a noise figure (NF) below 10dB and input return loss greater than 10dB. The chip also has novel LO circuitry facilitating LO feed-through among down-converters chips in parallel. This wide bandwidth down-converter will be part of millimeter-wave PFPA receiver designed and fabricated in collaboration with the University of Massachusetts-Amherst Department of Astronomy. This PFPA receiver will be installed on Green Bank Telescope (GMT) / Large millimeter wave telescope (LMT) in Q2 of 2014. This project is collaboration between the University of Massachusetts-Amherst (UMass), Brigham Young University (BYU) and National Radio Astronomy Observatory (NRAO). To the best of the author’s knowledge, this is first wide bandwidth down-converter at W-band to achieve this high gain and low noise figure among Si/SiGe based systems

A 14-mW PLL-less receiver in 0.18-μm CMOS for Chinese electronic toll collection standard

This is the accepted manuscript version of the following article: Xiaofeng He, et al., “A 14-mW PLL-less receiver in 0.18-μm CMOS for Chinese electronic toll collection standard”, IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 61(10): 763-767, August 2014. The final published version is available at: http://ieeexplore.ieee.org/document/6871304/ © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.The design of a 14-mW receiver without phase-locked loop for the Chinese electronic toll collection (ETC) system in a standard 0.18-μm CMOS process is presented in this brief. Since the previously published work was mainly based on vehicle-powered systems, low power consumption was not the primary goal of such a system. In contrast, the presented system is designed for a battery-powered system. Utilizing the presented receiver architecture, the entire receiver only consumes 7.8 mA, at the supply voltage of 1.8 V, which indicates a power saving of at least 38% compared with other state-of-the-art designs for the same application. To verify the performance, the bit error rate is measured to be better than 10-6, which well satisfies the Chinese ETC standard. Moreover, the sensitivity of the designed receiver can be readjusted to -50 dBm, which is required by the standard.Peer reviewe

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. Traditionally, microwave electronics has used exclusive and more expensive semiconductor technologies (III-V materials). However, the rapid development of consumer electronics (e.g. video game consoles) the last decade has pushed the silicon CMOS IC technology towards even smaller feature sizes. This has resulted in high speed transistors (high fT and fmax) with low noise figures. However, as the breakdown voltages have decreased, a lower supply voltage must be used, which has had a negative impact on linearity and dynamic range. Nonetheless, todays downscaled CMOS technology is a feasible alternative for many microwave and even millimeter wave applications. The low quality factor (Q) of passive components on-chip usually limits the high frequency performance. For inductors realized in a standard CMOS process the substrate coupling results in a degraded Q. The quality factor can, however, be improved by moving the passive components off-chip and integrating them on a low loss carrier. This thesis therefore features microwave front-end and VCO designs in CMOS, where some designs have been flip-chip mounted on carriers featuring high Q inductors and low loss baluns. The thesis starts with an introduction to wireless communication, receiver architectures, front-end receiver blocks, and low loss carrier technology, followed by the included papers. The six included papers show the capability of CMOS and carrier technology at microwave frequencies: Papers II, III, and VI demonstrate fully integrated CMOS circuit designs. An LC-VCO using an accumulation mode varactor is presented in Paper II, a QVCO using 4-bit switched tuning is shown in Paper III, and a quadrature receiver front-end (including QVCO) is demonstrated in paper VI. Papers I and IV demonstrate receiver front-ends using low loss baluns on carrier for the LO and RF signals. Paper IV also includes a front-end using single-ended RF input which is converted to differential form in a novel merged LNA and balun. A VCO demonstrating the benefits of a high Q inductor on carrier is presented in Paper V

A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems

Innovative circuit architectures and techniques to enhance the performance of several key BiCMOS RFIC building blocks applied in radar and wireless communication systems operating at the millimeter-wave frequencies are addressed in this dissertation. The former encapsulates the development of an advanced, low-cost and miniature millimeter-wave coexistent current mode direct conversion receiver for short-range, high-resolution radar and high data rate communication systems. A new class of broadband low power consumption active balun-LNA consisting of two common emitters amplifiers mutually coupled thru an AC stacked transformer for power saving and gain boosting. The active balun-LNA exhibits new high linearity technique using a constant gm cell transconductance independent of input-outputs variations based on equal emitters’ area ratios. A novel multi-stages active balun-LNA with innovative technique to mitigate amplitude and phase imbalances is proposed. The new multi-stages balun-LNA technique consists of distributed feed-forward averaging recycles correction for amplitude and phase errors and is insensitive to unequal paths parasitic from input to outputs. The distributed averaging recycles correction technique resolves the amplitude and phase errors residuals in a multi-iterative process. The new multi-stages balun-LNA averaging correction technique is frequency independent and can perform amplitude and phase calibrations without relying on passive lumped elements for compensation. The multi-stage balun-LNA exhibits excellent performance from 10 to 50 GHz with amplitude and phase mismatches less than 0.7 dB and 2.86º, respectively. Furthermore, the new multi-stages balun-LNA operates in current mode and shows high linearity with low power consumption. The unique balun-LNA design can operates well into mm-wave regions and is an integral block of the mm-wave radar and communication systems. The integration of several RFIC blocks constitutes the broadband millimeter-wave coexistent current mode direct conversion receiver architecture operating from 22- 44 GHz. The system and architectural level analysis provide a unique understanding into the receiver characteristics and design trade-offs. The RF front-end is based on the broadband multi-stages active balun-LNA coupled into a fully balanced passive mixer with an all-pass in-phase/quadrature phase generator. The trans-impedance amplifier converts the input signal current into a voltage gain at the outputs. Simultaneously, the high power input signal current is channelized into an anti-aliasing filter with 20 dB rejection for out of band interferers. In addition, the dissertation demonstrates a wide dynamic range system with small die area, cost effective and very low power consumption

A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems

Innovative circuit architectures and techniques to enhance the performance of several key BiCMOS RFIC building blocks applied in radar and wireless communication systems operating at the millimeter-wave frequencies are addressed in this dissertation. The former encapsulates the development of an advanced, low-cost and miniature millimeter-wave coexistent current mode direct conversion receiver for short-range, high-resolution radar and high data rate communication systems. A new class of broadband low power consumption active balun-LNA consisting of two common emitters amplifiers mutually coupled thru an AC stacked transformer for power saving and gain boosting. The active balun-LNA exhibits new high linearity technique using a constant gm cell transconductance independent of input-outputs variations based on equal emitters’ area ratios. A novel multi-stages active balun-LNA with innovative technique to mitigate amplitude and phase imbalances is proposed. The new multi-stages balun-LNA technique consists of distributed feed-forward averaging recycles correction for amplitude and phase errors and is insensitive to unequal paths parasitic from input to outputs. The distributed averaging recycles correction technique resolves the amplitude and phase errors residuals in a multi-iterative process. The new multi-stages balun-LNA averaging correction technique is frequency independent and can perform amplitude and phase calibrations without relying on passive lumped elements for compensation. The multi-stage balun-LNA exhibits excellent performance from 10 to 50 GHz with amplitude and phase mismatches less than 0.7 dB and 2.86º, respectively. Furthermore, the new multi-stages balun-LNA operates in current mode and shows high linearity with low power consumption. The unique balun-LNA design can operates well into mm-wave regions and is an integral block of the mm-wave radar and communication systems. The integration of several RFIC blocks constitutes the broadband millimeter-wave coexistent current mode direct conversion receiver architecture operating from 22- 44 GHz. The system and architectural level analysis provide a unique understanding into the receiver characteristics and design trade-offs. The RF front-end is based on the broadband multi-stages active balun-LNA coupled into a fully balanced passive mixer with an all-pass in-phase/quadrature phase generator. The trans-impedance amplifier converts the input signal current into a voltage gain at the outputs. Simultaneously, the high power input signal current is channelized into an anti-aliasing filter with 20 dB rejection for out of band interferers. In addition, the dissertation demonstrates a wide dynamic range system with small die area, cost effective and very low power consumption