Photon Counting and Direct ToF Camera Prototype Based on CMOS SPADs

This paper presents a camera prototype for 2D/3D image capture in low illumination conditions based on single-photon avalanche-diode (SPAD) image sensor for direct time-offlight (d-ToF). The imager is a 64×64 array with in-pixel TDC for high frame rate acquisition. Circuit design techniques are combined to ensure successful 3D image capturing under low sensitivity conditions and high level of uncorrelated noise such as dark count and background illumination. Among them an innovative time gated front-end for the SPAD detector, a reverse start-stop scheme and real-time image reconstruction at Ikfps are incorporated by the imager. To the best of our knowledge, this is the first ToF camera based on a SPAD sensor fabricated and proved for 3D image reconstruction in a standard CMOS process without any opto-flavor or high voltage option. It has a depth resolution of 1cm at an illumination power from less than 6nW/mm 2 down to 0.1nW/mm 2 .Office of Naval Research (USA) N000141410355Ministerio de Economía y Competitividad TEC2015-66878-C3- 1-RJunta de Andalucía P12-TIC 233

A CMOS 0.18μm 64×64 single photon image sensor with in-pixel 11b time-to-digital converter

The design and characterization of a CMOS 64×64 single-photon avalanche-diode (SPAD) array with in-pixel 11b time-to-digital converter (TDC) is presented. It is targeted for time-resolved imaging, in particular 3D imaging. The achieved pixel pitch is 64μm with a fill factor of 3.5%. The chip was fabricated in a 0.18μm standard CMOS technology and implements a double functionality: Time-of-Flight estimation and photon counting. The imager features a programmable time resolution for the array of TDCs from 625ps down to 145ps. The measured accuracy of the minimum time bin is lower than ±1LSB DNL and 1.7LSB INL. The TDC jitter over the full dynamic range is less than 1LSB. Die-to-die process variation and temperature are discarded by auto-calibration. Fast quenching/restore circuit on each pixel lowers the power consumption by limiting the avalanche currents. Time gatedoperation is possible as well.Office of Naval Research (USA) N000141410355Ministerio de Economía y Competitividad TEC2012-38921- C02, IPT- 2011-1625-430000, IPC- 20111009 CDTIJunta de Andalucía TIC 2012- 233

Non-line-of-sight tracking of people at long range

A remote-sensing system that can determine the position of hidden objects has applications in many critical real-life scenarios, such as search and rescue missions and safe autonomous driving. Previous work has shown the ability to range and image objects hidden from the direct line of sight, employing advanced optical imaging technologies aimed at small objects at short range. In this work we demonstrate a long-range tracking system based on single laser illumination and single-pixel single-photon detection. This enables us to track one or more people hidden from view at a stand-off distance of over 50~m. These results pave the way towards next generation LiDAR systems that will reconstruct not only the direct-view scene but also the main elements hidden behind walls or corners

Photon-Efficient Computational 3D and Reflectivity Imaging with Single-Photon Detectors

Capturing depth and reflectivity images at low light levels from active illumination of a scene has wide-ranging applications. Conventionally, even with single-photon detectors, hundreds of photon detections are needed at each pixel to mitigate Poisson noise. We develop a robust method for estimating depth and reflectivity using on the order of 1 detected photon per pixel averaged over the scene. Our computational imager combines physically accurate single-photon counting statistics with exploitation of the spatial correlations present in real-world reflectivity and 3D structure. Experiments conducted in the presence of strong background light demonstrate that our computational imager is able to accurately recover scene depth and reflectivity, while traditional maximum-likelihood based imaging methods lead to estimates that are highly noisy. Our framework increases photon efficiency 100-fold over traditional processing and also improves, somewhat, upon first-photon imaging under a total acquisition time constraint in raster-scanned operation. Thus our new imager will be useful for rapid, low-power, and noise-tolerant active optical imaging, and its fixed dwell time will facilitate parallelization through use of a detector array.Comment: 11 pages, 8 figure

Low Noise and High Photodetection Probability SPAD in 180 nm Standard CMOS Technology

A square shaped, low noise and high photo-response single photon avalanche diode suitable for circuit integration, implemented in a standard CMOS 180 nm high voltage technology, is presented. In this work, a p+ to shallow n-well junction was engineered with a very smooth electric field profile guard ring to attain a photo detection probability peak higher than 50% with a median dark count rate lower than 2 Hz/μm2 when operated at an excess bias of 4 V. The reported timing jitter full width at half maximum is below 300 ps for 640 nm laser pulses

Characterization-Based Modeling of Retriggering and Afterpulsing for Passively Quenched CMOS SPADs

The current trend in the design of systems based on CMOS SPADs is to adopt smaller technological nodes, allowing the co-integration of additional electronics for the implementation of complex digital systems on chip. Due to their simplicity, a way to reduce the area occupied by the integrated electronics is the use of passive quenching circuits (PQCs) instead of active (AQCs) or mixed (MQCs) ones. However, the recharge phase in PQCs is slower, so the device can be retriggered before this phase ends. This paper studies the phenomena of afterpulsing and retriggering, depending on the characteristics of the SPADs and the working conditions. In order to do that, a test chip containing SPADs of different size has been characterized in several operating environments. A mathematical model has been proposed for fitting afterpulsing phenomenon. It is shown that retriggering can be also described in terms of this model, suggesting that it is linked to carriers trapped in the shallow levels of the semiconductor and that should be taken into account when considering the total amount of afterpulsing events.Junta de Andalucía TIC 233