A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design

This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors the proposed circuit is only composed of a single two n-channel MOSFET-based inverting voltage buffer, three passive components, and one NMOS-based voltage-controlled resistor, which is with advantage used to electronically control the pole frequency of the filter in range 103 kHz to 18.3 MHz. The proposed filter is also very suitable for low-voltage operation, since between its supply rails it uses only two MOSFETs. In the paper the effect of load is investigated. In addition, in order to suppress the effect of non-zero output resistance of the inverting voltage buffer, two compensation techniques are also introduced. The theoretical results are verified by SPICE simulations using PTM 90 nm level-7 CMOS process BSIM3v3 parameters, where +/- 0.45 V supply voltages are used. Moreover, the behavior of the proposed filter was also experimentally measured using readily available array transistors CD4007UB by Texas Instruments

Power and area efficient MOSFET-C filter for very low frequency applications

New circuit design techniques for implementing very high-valued resistors are presented, significantly improving power and area efficiency of analog front-end signal processing in ultra-low power biomedical systems. Ranging in value from few hundreds of \hbox{M}\Upomega to few hundreds of \hbox{G}\Upomega , the proposed floating resistors occupy a very small area, and produce accurately tunable characteristics. Using this approach, a low-pass MOSFET-C filter with tunable cutoff frequency (f C =20Hz-184kHz) has been implemented in a conventional 0.18μm CMOS technology. Occupying 0.045mm2/pole, the power consumption of this filter is 540 pW/Hz/pole with a measured IMFDR of 70 d

0.5V 3rd-order Tunable gm-C Filter

This paper proposes a 3rd-order gm-C filter that operates with the extremely low voltage supply of 0.5V. The employed transconductor is capable for operating in an extremely low voltage power supply environment. A benefit offered by the employed transconductor is that the filter’s cut-off frequency can be tuned, through a dc control current, for relatively large ranges. The filter structure was designed using normal threshold transistors of a triple-well 0.13μm CMOS process and is operated under a 0.5V supply voltage; its behavior has been evaluated through simulation results by utilizing the Analog Design Environment of the Cadence software

Device modelling for bendable piezoelectric FET-based touch sensing system

Flexible electronics is rapidly evolving towards devices and circuits to enable numerous new applications. The high-performance, in terms of response speed, uniformity and reliability, remains a sticking point. The potential solutions for high-performance related challenges bring us back to the timetested silicon based electronics. However, the changes in the response of silicon based devices due to bending related stresses is a concern, especially because there are no suitable models to predict this behavior. This also makes the circuit design a difficult task. This paper reports advances in this direction, through our research on bendable Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET) based touch sensors. The analytical model of POSFET, complimented with Verilog-A model, is presented to describe the device behavior under normal force in planar and stressed conditions. Further, dynamic readout circuit compensation of POSFET devices have been analyzed and compared with similar arrangement to reduce the piezoresistive effect under tensile and compressive stresses. This approach introduces a first step towards the systematic modeling of stress induced changes in device response. This systematic study will help realize high-performance bendable microsystems with integrated sensors and readout circuitry on ultra-thin chips (UTCs) needed in various applications, in particular, the electronic skin (e-skin)

A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD), floating-gate (FG) and quasi-floating-gate (QFG) techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA) base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 µW. PSpice simulation results using the 0.18 µm CMOS technology from TSMC are included to verify the design functionality and correspondence with theory

Inverter-Based Low-Voltage CCII- Design and Its Filter Application

This paper presents a negative type second-generation current conveyor (CCII-). It is based on an inverter-based low-voltage error amplifier, and a negative current mirror. The CCII- could be operated in a very low supply voltage such as ±0.5V. The proposed CCII- has wide input voltage range (±0.24V), wide output voltage (±0.24V) and wide output current range (±24mA). The proposed CCII- has no on-chip capacitors, so it can be designed with standard CMOS digital processes. Moreover, the architecture of the proposed circuit without cascoded MOSFET transistors is easily designed and suitable for low-voltage operation. The proposed CCII- has been fabricated in TSMC 0.18μm CMOS processes and it occupies 1189.91 x 1178.43μm2 (include PADs). It can also be validated by low voltage CCII filters

A 0.18µm CMOS DDCCII for Portable LV-LP Filters

In this paper a current mode very low voltage (LV) (1V) and low power (LP) (21 µW) differential difference second generation current conveyor (CCII) is presented. The circuit is developed by applying the current sensing technique to a fully balanced version of a differential difference amplifier (DDA) so to design a suitable LV LP integrated version of the so-called differential difference CCII (DDCCII). Post-layout results, using a 0.18µm SMIC CMOS technology, have shown good general circuit performances making the proposed circuit suitable for fully integration in battery portable systems as, for examples, fully differential Sallen-Key bandpass filter

Voltage-Mode Multifunction Biquadratic Filters Using New Ultra-Low-Power Differential Difference Current Conveyors

This paper presents two low-power voltage-mode multifunction biquadratic filters using differential difference current conveyors. Each proposed circuit employs three differential difference current conveyors, two grounded capacitors and two grounded resistors. The low-voltage ultra-low-power differential difference current conveyor is used to provide low-power consumption of the proposed filters. By appropriately connecting the input and output terminals, the proposed filters can provide low-pass, band-pass, high-pass, band-stop and all-pass voltage responses at high-input terminals, which is a desirable feature for voltage-mode operations. The natural frequency and the quality factor can be orthogonally set by adjusting the circuit components. For realizing all the filter responses, no inverting-type input signal requirements as well as no component-matching conditional requirements are imposed. The incremental parameter sensitivities are also low. The characteristics of the proposed circuits are simulated by using PSPICE simulators to confirm the presented theory

Analogue micropower FET techniques review

A detailed introduction to published analogue circuit design techniques using Si and Si/SiGe FET devices for very low-power applications is presented in this review. The topics discussed include sub-threshold operation in FET devices, micro-current mirrors and cascode techniques, voltage level-shifting and class-AB operation, the bulk-drive approach, the floating-gate method, micropower transconductance-capacitance and log-domain filters and strained-channel FET technologies

A FULLY INTEGRATED NEURAL SIGNAL ACQUISITION AMPLIFIER FOR EPILEPTIC SEIZURE PREDICTION

This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce the power consumption. Low frequency high pass function has been realized with anti-parallel Diode connected PMOS. Simulation results shows that the input referred noise is 1.24μVrms from 100Hz to 5 KHz, mid-band voltage gain of 44.6dB, and the power consumption is 18.74μw. A new signal processing circuit has been designed extract the seizure onset. The results are validated using Cadence spectre simulator with 180nm technology. Simulation results show that this implantable amplifier is suitable for Epileptic seizure prediction