6 research outputs found

    State of the art in chip-to-chip interconnects

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    This thesis presents a study of short-range links for chips mounted in the same package, on printed circuit boards or interposers. Implemented in CMOS technology between 7 and 250 nm, with links that operate at a data rate between 0,4 and 112 Gb/s/pin and with energy efficiencies from 0,3 to 67,7 pJ/bit. The links operate on channels with an attenuation lower than 50 dB. A comparison is made with graphical representations between the different articles that shows the correlation between the different essential metrics of chip-to-chip interconnects, as well as its evolution over the last 20 years.Esta tesis presenta un estudio de enlaces de corto alcance para chips montados en un mismo paquete, en placas de circuito impreso o intercaladores. Implementado en tecnología CMOS entre 7 y 250 nm, con enlaces que operan a una velocidad de datos entre 0,4 y 112 Gb/s/pin y con eficiencias energéticas de 0,3 a 67,7 pJ/bit. Los enlaces operan en canales con una atenuación inferior a 50 dB. Se realiza una comparación con representaciones gráficas entre los diferentes artículos que muestra la correlación entre las distintas métricas esenciales de las interconexiones chip a chip, así como su evolución en los últimos 20 años.Aquesta tesi presenta un estudi d'enllaços de curt abast per a xips muntats en el mateix paquet, en plaques de circuits impresos o interposers. Implementat en tecnologia CMOS entre 7 i 250 nm, amb enllaços que funcionen a una velocitat de dades entre 0,4 i 112 Gb/s/pin i amb eficiències energètiques de 0,3 a 67,7 pJ/bit. Els enllaços funcionen en canals amb una atenuació inferior a 50 dB. Es fa una comparació amb representacions gràfiques entre els diferents articles que mostra la correlació entre les diferents mètriques essencials d'interconnexions xip a xip, així com la seva evolució en els darrers 20 anys

    Design Techniques for High Performance Serial Link Transceivers

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    Increasing data rates over electrical channels with significant frequency-dependent loss is difficult due to excessive inter-symbol interference (ISI). In order to achieve sufficient link margins at high rates, I/O system designers implement equalization in the transmitters and are motivated to consider more spectrally-efficient modulation formats relative to the common PAM-2 scheme, such as PAM-4 and duobinary. The first work, reviews when to consider PAM-4 and duobinary formats, as the modulation scheme which yields the highest system margins at a given data rate is a function of the channel loss profile, and presents a 20Gb/s triple-mode transmitter capable of efficiently implementing these three modulation schemes and three-tap feedforward equalization. A statistical link modeling tool, which models ISI, crosstalk, random noise, and timing jitter, is developed to compare the three common modulation formats operating on electrical backplane channel models. In order to improve duobinary modulation efficiency, a low-power quarter-rate duobinary precoder circuit is proposed which provides significant timing margin improvement relative to full-rate precoders. Also as serial I/O data rates scale above 10 Gb/s, crosstalk between neighboring channels degrades system bit-error rate (BER) performance. The next work presents receive-side circuitry which merges the cancellation of both near-end and far-end crosstalk (NEXT/FEXT) and can automatically adapt to different channel environments and variations in process, voltage, and temperature. NEXT cancellation is realized with a novel 3-tap FIR filter which combines two traditional FIR filter taps and a continuous-time band-pass filter IIR tap for efficient crosstalk cancellation, with all filter tap coefficients automatically determined via an ondie sign-sign least-mean-square (SS-LMS) adaptation engine. FEXT cancellation is realized by coupling the aggressor signal through a differentiator circuit whose gain is automatically adjusted with a power-detection-based adaptation loop. In conclusion, the proposed architectures in the transmitter side and receiver side together are to be good solution in the high speed I/O serial links to improve the performance by overcome the physical channel loss and adjacent channel noise as the system becomes complicated

    Novel Multicarrier Memory Channel Architecture Using Microwave Interconnects: Alleviating the Memory Wall

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    abstract: The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon. A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel. Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Hybrid NRZ/Multi-Tone Signaling for High-Speed Low-Power Wireline Transceivers

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    Over the past few decades, incessant growth of Internet networking traffic and High-Performance Computing (HPC) has led to a tremendous demand for data bandwidth. Digital communication technologies combined with advanced integrated circuit scaling trends have enabled the semiconductor and microelectronic industry to dramatically scale the bandwidth of high-loss interfaces such as Ethernet, backplane, and Digital Subscriber Line (DSL). The key to achieving higher bandwidth is to employ equalization technique to compensate the channel impairments such as Inter-Symbol Interference (ISI), crosstalk, and environmental noise. Therefore, todayâs advanced input/outputs (I/Os) has been equipped with sophisticated equalization techniques to push beyond the uncompensated bandwidth of the system. To this end, process scaling has continually increased the data processing capability and improved the I/O performance over the last 15 years. However, since the channel bandwidth has not scaled with the same pace, the required signal processing and equalization circuitry becomes more and more complicated. Thereby, the energy efficiency improvements are largely offset by the energy needed to compensate channel impairments. In this design paradigm, re-thinking about the design strategies in order to not only satisfy the bandwidth performance, but also to improve power-performance becomes an important necessity. It is well known in communication theory that coding and signaling schemes have the potential to provide superior performance over band-limited channels. However, the choice of the optimum data communication algorithm should be considered by accounting for the circuit level power-performance trade-offs. In this thesis we have investigated the application of new algorithm and signaling schemes in wireline communications, especially for communication between microprocessors, memories, and peripherals. A new hybrid NRZ/Multi-Tone (NRZ/MT) signaling method has been developed during the course of this research. The system-level and circuit-level analysis, design, and implementation of the proposed signaling method has been performed in the frame of this work, and the silicon measurement results have proved the efficiency and the robustness of the proposed signaling methodology for wireline interfaces. In the first part of this work, a 7.5 Gb/s hybrid NRZ/MT transceiver (TRX) for multi-drop bus (MDB) memory interfaces is designed and fabricated in 40 nm CMOS technology. Reducing the complexity of the equalization circuitry on the receiver (RX) side, the proposed architecture achieves 1 pJ/bit link efficiency for a MDB channel bearing 45 dB loss at 2.5 GHz. The measurement results of the first prototype confirm that NRZ/MT serial data TRX can offer an energy-efficient solution for MDB memory interfaces. Motivated by the satisfying results of the first prototype, in the second phase of this research we have exploited the properties of multi-tone signaling, especially orthogonality among different sub-bands, to reduce the effect of crosstalk in high-dense wireline interconnects. A four-channel transceiver has been implemented in a standard CMOS 40 nm technology in order to demonstrate the performance of NRZ/MT signaling in presence of high channel loss and strong crosstalk noise. The proposed system achieves 1 pJ/bit power efficiency, while communicating over a MDB memory channel at 36 Gb/s aggregate data rate

    Power-Proportional Optical Links

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    The continuous increase in data transfer rate in short-reach links, such as chip-to-chip and between servers within a data-center, demands high-speed links. As power efficiency becomes ever more important in these links, power-efficient optical links need to be designed. Power efficiency in a link can be achieved by enabling power-proportional communication over the serial link. In power-proportional links, the power dissipated by a link is proportional to the amount of data communicated. Normally, data-rate demand is not constant, and the peak data-rate is not required all the time. If a link is not adapted according to the data-rate demand, there will be a fixed power dissipation, and the power efficiency of the link will degrade during the sub-maximal link utilization. Adapting links to real-time data-rate requirements reduces power dissipation. Power proportionality is achieved by scaling the power of the serial link linearly with the link utilization, and techniques such as variable data-rate and burst-mode can be adopted for this purpose. Links whose data rate (and hence power dissipation) can be varied in response to system demands are proposed in this work. Past works have presented rapidly reconfigurable bandwidth in variable data-rate receivers, allowing lower power dissipation for lower data-rate operation. However, maintaining synchronization during reconfiguration was not possible since previous approaches have introduced changes in front-end delay when they are reconfigured. This work presents a technique that allows rapid bandwidth adjustment while maintaining a near-constant delay through the receiver suitable for a power-scalable variable data-rate optical link. Measurements of a fabricated integrated circuit (IC) show nearly constant energy per bit across a 2× variation in data rate while introducing less than 10 % of a unit interval (UI) of delay variation. With continuously increasing data communication in data-centers, parallel optical links with ever-increasing per-lane data rates are being used to meet overall throughput demands. Simultaneously, power efficiency is becoming increasingly important for these links since they do not transmit useful data all the time. The burst-mode solution for vertical-cavity surface-emitting laser (VCSEL)-based point-to-point communication can be used to improve links’ energy efficiency during low link activity. The burst-mode technique for VCSEL-based links has not yet been deployed commercially. Past works have presented burst-mode solutions for single-channel receivers, allowing lower power dissipation during low link activity and solutions for fast activation of the receivers. However, this work presents a novel technique that allows rapid activation of a front-end and fast locking of a clock-and-data-recovery (CDR) for a multi-channel parallel link, utilizing opportunities arising from the parallel nature of many VCSEL-based links. The idea has been demonstrated through electrical and optical measurements of a fabricated IC at 10 Gbps, which show fast data detection and activation of the circuitry within 49 UIs while allowing the front-end to achieve better energy efficiency during low link activity. Simulation results are also presented in support of the proposed technique which allows the CDR to lock within 26 UIs from when it is powered on

    Towards the Design of Robust High-Speed and Power Efficient Short Reach Photonic Links

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    In 2014, approximately eight trillion transistors were fabricated every second thanks to improvements in integration density and fabrication processes. This increase in integration and functionality has also brought about the possibility of system on chip (SoC) and high-performance computing (HPC). Electrical interconnects presently dominate the very-short reach interconnect landscape (< 5 cm) in these applications. This, however, is expected to change. These interconnects' downfall will be caused by their need for impedance matching, limited pin-density and frequency dependent loss leading to intersymbol interference. In an attempt to solve this, researchers have increasingly explored integrated silicon photonics as it is compatible with current CMOS processes and creates many possibilities for short-reach applications. Many see optical interconnects as the high-speed link solution for applications ranging from intra-data center (~200 m) down to module or even chip scales (< 2 cm). The attractive properties of optical interconnects, such as low loss and multiplexing abilities, will enable such things as Exascale high-performance computers of the future (equal to 10^18 calculations per second). In fact, forecasts predict that by 2025 photonics at the smallest levels of the interconnect hierarchy will be a reality. This thesis presents three novel research projects, which all work towards increasing robustness and cost-efficiency in short-reach optical links. It discusses three parts of the optical link: the interconnect, the receiver and the photodiode. The first topic of this thesis is exploratory work on the use of an optical multiplexing technique, mode-division multiplexing (MDM), to carry multiple data lanes along with a forwarded clock for very short-reach applications. The second topic discussed is a novel reconfigurable CMOS receiver proposed as a method to map a clock signal to an interconnect lane in an MDM source-synchronous link with the lowest optical crosstalk. The receiver is designed as a method to make electronic chips that suit the needs of optical ones. By leveraging the more robust electronic integrated circuit, link solutions can be tuned to meet the needs of photonic chips on a die by die basis. The third topic of this thesis proposes a novel photodetector which uses photonic grating couplers to redirect vertical incident light to the horizontal direction. With this technique, the light is applied along the entire length of a p-n junction to improve the responsivity and speed of the device. Experimental results for this photodetector at 35 Gb/s are published, showing it to be the fastest all-silicon based photodetector reported in the literature at the time of publication
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